637-nm Hybrid-Integrated Diode Laser

L.V. Winkler; A. van Rees; K. Gerritsma; M. Hoekman; P.P.J. Schrinner; R. Dekker; P.J.M. van der Slot; C. Nölleke; K.-J. Boller

637-nm Hybrid-Integrated Diode Laser

L.V. Winkler^*, A. van Rees, K. Gerritsma, M. Hoekman, P.P.J. Schrinner, R. Dekker, P.J.M. van der Slot, C. Nölleke, K.-J. Boller

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

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Abstract

We present the first hybrid integrated extended cavity diode laser (ECDL) tunable around 637 nm. This wavelength range is important for excitation of nitrogen vacancy centers (NV) in diamond, one of the leading platforms for quantum information processing. The laser comprises a custom designed Si₃N₄ circuit using high-confinement, low-loss, double-stripe waveguides to provide frequency selective feedback to a semiconductor optical amplifier (SOA). The SOA, a tilted-waveguide GaAs double-pass amplifier, and the Si₃N₄ feedback circuit are hybrid integrated using tapers for mode matching. Two microring resonators in the feedback circuit serve for single-wavelength operation and wide tuning. The laser shows a threshold pump current of 50 mA with 0.26 mW fiber-coupled output power. The laser can be tuned across the full gain bandwidth of 6 nm, including the NV-center target wavelength.

Original language	English
Number of pages	4
Publication status	Published - 25 Nov 2022
Event	26th annual Symposium of the IEEE Photonics Benelux Chapter 2022 - Eindhoven University of Technology, Eindhoven, Netherlands Duration: 24 Nov 2022 → 25 Nov 2022 Conference number: 26 https://www.aanmelder.nl/ieee-ps-benelux-2022

Conference

Conference	26th annual Symposium of the IEEE Photonics Benelux Chapter 2022
Country/Territory	Netherlands
City	Eindhoven
Period	24/11/22 → 25/11/22
Internet address	https://www.aanmelder.nl/ieee-ps-benelux-2022

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title = "637-nm Hybrid-Integrated Diode Laser",

abstract = "We present the first hybrid integrated extended cavity diode laser (ECDL) tunable around 637 nm. This wavelength range is important for excitation of nitrogen vacancy centers (NV) in diamond, one of the leading platforms for quantum information processing. The laser comprises a custom designed Si3N4 circuit using high-confinement, low-loss, double-stripe waveguides to provide frequency selective feedback to a semiconductor optical amplifier (SOA). The SOA, a tilted-waveguide GaAs double-pass amplifier, and the Si3N4 feedback circuit are hybrid integrated using tapers for mode matching. Two microring resonators in the feedback circuit serve for single-wavelength operation and wide tuning. The laser shows a threshold pump current of 50 mA with 0.26 mW fiber-coupled output power. The laser can be tuned across the full gain bandwidth of 6 nm, including the NV-center target wavelength.",

author = "L.V. Winkler and {van Rees}, A. and K. Gerritsma and M. Hoekman and P.P.J. Schrinner and R. Dekker and {van der Slot}, P.J.M. and C. N{\"o}lleke and K.-J. Boller",

year = "2022",

month = nov,

day = "25",

language = "English",

note = "26th annual Symposium of the IEEE Photonics Benelux Chapter 2022 ; Conference date: 24-11-2022 Through 25-11-2022",

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TY - CONF

T1 - 637-nm Hybrid-Integrated Diode Laser

AU - Winkler, L.V.

AU - van Rees, A.

AU - Gerritsma, K.

AU - Hoekman, M.

AU - Schrinner, P.P.J.

AU - Dekker, R.

AU - van der Slot, P.J.M.

AU - Nölleke, C.

AU - Boller, K.-J.

N1 - Conference code: 26

PY - 2022/11/25

Y1 - 2022/11/25

N2 - We present the first hybrid integrated extended cavity diode laser (ECDL) tunable around 637 nm. This wavelength range is important for excitation of nitrogen vacancy centers (NV) in diamond, one of the leading platforms for quantum information processing. The laser comprises a custom designed Si3N4 circuit using high-confinement, low-loss, double-stripe waveguides to provide frequency selective feedback to a semiconductor optical amplifier (SOA). The SOA, a tilted-waveguide GaAs double-pass amplifier, and the Si3N4 feedback circuit are hybrid integrated using tapers for mode matching. Two microring resonators in the feedback circuit serve for single-wavelength operation and wide tuning. The laser shows a threshold pump current of 50 mA with 0.26 mW fiber-coupled output power. The laser can be tuned across the full gain bandwidth of 6 nm, including the NV-center target wavelength.

AB - We present the first hybrid integrated extended cavity diode laser (ECDL) tunable around 637 nm. This wavelength range is important for excitation of nitrogen vacancy centers (NV) in diamond, one of the leading platforms for quantum information processing. The laser comprises a custom designed Si3N4 circuit using high-confinement, low-loss, double-stripe waveguides to provide frequency selective feedback to a semiconductor optical amplifier (SOA). The SOA, a tilted-waveguide GaAs double-pass amplifier, and the Si3N4 feedback circuit are hybrid integrated using tapers for mode matching. Two microring resonators in the feedback circuit serve for single-wavelength operation and wide tuning. The laser shows a threshold pump current of 50 mA with 0.26 mW fiber-coupled output power. The laser can be tuned across the full gain bandwidth of 6 nm, including the NV-center target wavelength.

M3 - Paper

T2 - 26th annual Symposium of the IEEE Photonics Benelux Chapter 2022

Y2 - 24 November 2022 through 25 November 2022

ER -

637-nm Hybrid-Integrated Diode Laser

Abstract

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