TY - JOUR
T1 - 8×40 Gbps WDM amplification in a monolithically integrated Al2O3:Er3+-Si3N4waveguide amplifier
AU - Chrysostomidis, T.
AU - Mu, J.
AU - Roumpos, I.
AU - Fotiadis, K.
AU - Manolis, A.
AU - Vagionas, C.
AU - Dijkstra, M.
AU - Garcia-Blanco, S. M.
AU - Alexoudi, T.
AU - Vyrsokinos, K.
N1 - Funding Information:
Manuscript received July 15, 2021; revised September 1, 2021; accepted September 6, 2021. Date of publication September 10, 2021; date of current version September 21, 2021. This work was supported in part by Hellenic Foundation for Research and Innovation, in part by the General Secretariat for Research and Technology through Optical Random-Access Memories for Low-Latency High Throughput and Energy Efficient Disintegrated Computing Architectures (ORION) under Grant 585, in part by the Stichting voor de Technische Wetenschappen (STW) under Grant STW-13536, and in part by the European Research Council (ERC) under the European Union’s Horizon 2020 Research and Innovation Program under Agreement 648978. (Corresponding author: T. Chrysostomidis.) T. Chrysostomidis, I. Roumpos, and K. Vyrsokinos are with the Department of Physics, Aristotle University of Thessaloniki, 570 01 Thessaloniki, Greece, and also with the Center for Interdisciplinary Research and Innovation, Aristotle University of Thessaloniki, 570 01 Thessaloniki, Greece (e-mail: [email protected]; [email protected]; [email protected]).
Publisher Copyright:
© 1989-2012 IEEE.
PY - 2021/11/1
Y1 - 2021/11/1
N2 - On chip waveguide optical amplifiers have been extensively studied over the last years, with a wide variety of materials tested and proposed for different applications. Among the most prominent solutions for on-chip amplification, erbium doped waveguide amplifiers (EDWAs) are able to offer attractive performance metrics that can exceed SOA-based amplification solutions in traditional single and multi-channel systems. In this letter, we experimentally demonstrate a record high 8 × 40 Gbps non return to zero (NRZ) wavelength division multiplexing (WDM) data amplification through a 5.9 cm long on-chip amplifier consisting of an erbium-doped aluminum oxide spiral waveguide monolithically integrated on the Si3N4 platform. Experimental results show more than 12.7 dB amplification per channel for low saturation total input power of -2.75 dBm, and clear eye diagrams and bit-error rate values below the KR4-FEC limit of 2 × 10-5 for all eight channels without any digital signal processing (DSP) applied to the signal to the receiver or transmitter side. The high losses from the fiber to chip interfaces, however, prevented achieving device net gain.
AB - On chip waveguide optical amplifiers have been extensively studied over the last years, with a wide variety of materials tested and proposed for different applications. Among the most prominent solutions for on-chip amplification, erbium doped waveguide amplifiers (EDWAs) are able to offer attractive performance metrics that can exceed SOA-based amplification solutions in traditional single and multi-channel systems. In this letter, we experimentally demonstrate a record high 8 × 40 Gbps non return to zero (NRZ) wavelength division multiplexing (WDM) data amplification through a 5.9 cm long on-chip amplifier consisting of an erbium-doped aluminum oxide spiral waveguide monolithically integrated on the Si3N4 platform. Experimental results show more than 12.7 dB amplification per channel for low saturation total input power of -2.75 dBm, and clear eye diagrams and bit-error rate values below the KR4-FEC limit of 2 × 10-5 for all eight channels without any digital signal processing (DSP) applied to the signal to the receiver or transmitter side. The high losses from the fiber to chip interfaces, however, prevented achieving device net gain.
KW - 2022 OA procedure
KW - high bit-rate
KW - monolithic integration
KW - SiN
KW - waveguide amplifier
KW - AlO
UR - http://www.scopus.com/inward/record.url?scp=85114731658&partnerID=8YFLogxK
U2 - 10.1109/LPT.2021.3111894
DO - 10.1109/LPT.2021.3111894
M3 - Article
AN - SCOPUS:85114731658
SN - 1041-1135
VL - 33
SP - 1177
EP - 1180
JO - IEEE photonics technology letters
JF - IEEE photonics technology letters
IS - 21
ER -