A 0.06–3.4-MHz 92- μ W Analog FIR Channel Selection Filter With Very Sharp Transition Band for IoT Receivers

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    Abstract

    Analog FIR filtering is proposed to improve the performance of a single stage gm -C channel selection filter for ultra low power Internet-of-Things receivers. The transconductor is implemented as a digital-to-analog converter; allowing a varying transconductance in time, which results in a very sharp FIR filter. The filter is manufactured in 22-nm FDSOI and has a core area of 0.09 mm 2 . It consumes 92 μW from a 700-mV supply and achieves f−60dB/f−3dB=3.8 . The filter has 31.5 dB gain, out-of-band OIP3 of 28 dBm and output referred 1-dB compression point of 3.7 dBm. The filter bandwidth is tunable from 0.06 to 3.4 MHz.
    Original languageEnglish
    Pages (from-to)171-174
    Number of pages4
    JournalIEEE Solid State Circuits Letters
    Volume2
    Issue number9
    Early online date1 Sep 2019
    DOIs
    Publication statusPublished - 21 Oct 2019

    Fingerprint

    FIR filters
    Transconductance
    Digital to analog conversion
    Bandwidth
    Internet of things

    Keywords

    • Analog filters
    • Analog FIR (AFIR) filters
    • FDSOI
    • gmDAC
    • Internet-of-Things (IoT)
    • Low power
    • Low-Pass Filter (LPF)

    Cite this

    @article{7a4f0d8b75954255a620fa842fd8f032,
    title = "A 0.06–3.4-MHz 92- μ W Analog FIR Channel Selection Filter With Very Sharp Transition Band for IoT Receivers",
    abstract = "Analog FIR filtering is proposed to improve the performance of a single stage gm -C channel selection filter for ultra low power Internet-of-Things receivers. The transconductor is implemented as a digital-to-analog converter; allowing a varying transconductance in time, which results in a very sharp FIR filter. The filter is manufactured in 22-nm FDSOI and has a core area of 0.09 mm 2 . It consumes 92 μW from a 700-mV supply and achieves f−60dB/f−3dB=3.8 . The filter has 31.5 dB gain, out-of-band OIP3 of 28 dBm and output referred 1-dB compression point of 3.7 dBm. The filter bandwidth is tunable from 0.06 to 3.4 MHz.",
    keywords = "Analog filters, Analog FIR (AFIR) filters, FDSOI, gmDAC, Internet-of-Things (IoT), Low power, Low-Pass Filter (LPF)",
    author = "Thijssen, {Bart J.} and Klumperink, {Eric A.M.} and Philip Quinlan and Bram Nauta",
    year = "2019",
    month = "10",
    day = "21",
    doi = "10.1109/LSSC.2019.2935569",
    language = "English",
    volume = "2",
    pages = "171--174",
    journal = "IEEE Solid State Circuits Letters",
    issn = "2573-9603",
    publisher = "IEEE",
    number = "9",

    }

    A 0.06–3.4-MHz 92- μ W Analog FIR Channel Selection Filter With Very Sharp Transition Band for IoT Receivers. / Thijssen, Bart J.; Klumperink, Eric A.M.; Quinlan, Philip; Nauta, Bram .

    In: IEEE Solid State Circuits Letters, Vol. 2, No. 9, 21.10.2019, p. 171-174.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - A 0.06–3.4-MHz 92- μ W Analog FIR Channel Selection Filter With Very Sharp Transition Band for IoT Receivers

    AU - Thijssen, Bart J.

    AU - Klumperink, Eric A.M.

    AU - Quinlan, Philip

    AU - Nauta, Bram

    PY - 2019/10/21

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    AB - Analog FIR filtering is proposed to improve the performance of a single stage gm -C channel selection filter for ultra low power Internet-of-Things receivers. The transconductor is implemented as a digital-to-analog converter; allowing a varying transconductance in time, which results in a very sharp FIR filter. The filter is manufactured in 22-nm FDSOI and has a core area of 0.09 mm 2 . It consumes 92 μW from a 700-mV supply and achieves f−60dB/f−3dB=3.8 . The filter has 31.5 dB gain, out-of-band OIP3 of 28 dBm and output referred 1-dB compression point of 3.7 dBm. The filter bandwidth is tunable from 0.06 to 3.4 MHz.

    KW - Analog filters

    KW - Analog FIR (AFIR) filters

    KW - FDSOI

    KW - gmDAC

    KW - Internet-of-Things (IoT)

    KW - Low power

    KW - Low-Pass Filter (LPF)

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    JO - IEEE Solid State Circuits Letters

    JF - IEEE Solid State Circuits Letters

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