Abstract
The trend towards reconfigurable receivers requires on-chip flexible filters that can replace dedicated, bulky and non-tunable filters (e.g., SAW and BAW [1]). Although BAW filters are compatible with silicon processes, their center frequency is sensitive to thickness variation of the piezoelectric material and the achievable tuneability is limited [1]. Other techniques to make RF on-chip band-pass filters (BPFs) include Q-enhancement, gm-C and N-path. Q-enhancement approach has several disadvantages such as large area due to inductors which do not obey process scaling, limited tuneability and poor dynamic range [2]. Main drawbacks of gm-C filters are the tradeoff between power consumption, quality factor, center frequency and dynamic range and the need for tuning circuitry [3]. Recently there has been renewed interest in the translational impedance conversion of N-path filters [4-6]. Due to the “transparency‿ of the passive mixer, baseband impedance is translated to frequencies around the clock frequency flo [7]. The interesting features of these filters are their direct tuneability with flo, higher quality factor compared to on-chip CMOS LC filters [2], high linearity and graceful scaling with process.
Original language | English |
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Title of host publication | 2012 IEEE International Solid-State Circuits Conference |
Place of Publication | Piscataway |
Publisher | IEEE |
Pages | 358-360 |
Number of pages | 3 |
ISBN (Print) | 978-1-4673-0376-7 |
DOIs | |
Publication status | Published - 22 Feb 2012 |
Event | IEEE International Solid-State Circuits Conference, ISSCC 2012 - San Francisco, United States Duration: 19 Feb 2012 → 23 Feb 2012 |
Conference
Conference | IEEE International Solid-State Circuits Conference, ISSCC 2012 |
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Abbreviated title | ISSCC |
Country/Territory | United States |
City | San Francisco |
Period | 19/02/12 → 23/02/12 |
Keywords
- METIS-286346
- EWI-21815
- IR-80302