A 1-V 15µW high-precision temperature switch

Daniel Schinkel, R.P. de Boer, Anne J. Annema, Adrianus Johannes Maria van Tuijl

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    Abstract

    A CMOS temperature switch with uncalibrated high temperature accuracy is presented. The circuit is based on the classical CMOS bandgap reference structure, using parasitic PNPs and a PTAT multiplier. The circuit was designed in a standard digital 0.18 µm CMOS process. The temperature switch has a in-designed hysteresis of 1.2° C around a threshold value of 128° C. At the switching-threshold all matched transistors have also matched operating conditions, yielding a temperature threshold that is highly independent of transistor output resistance and supply voltage. With a chip area of only 0.03 mm2:, the on-wafer 3σ spread of the threshold temperature is 1.1° C. Power consumption is only 15 µA at 1 Volt supply.
    Original languageEnglish
    Title of host publication27th European Solid-State Circuits Conference (ESSCIRC 2001)
    Place of PublicationVillach, Austria
    PublisherCarinthia Tech Institute
    Pages104-107
    Number of pages4
    ISBN (Print)291460100x
    Publication statusPublished - Sep 2001
    Event27th European Solid-State Circuits Conference, ESSCIRC 2001 - Villach, Austria
    Duration: 18 Sep 200120 Sep 2001

    Conference

    Conference27th European Solid-State Circuits Conference, ESSCIRC 2001
    Abbreviated titleESSCIRC
    CountryAustria
    CityVillach
    Period18/09/0120/09/01

    Keywords

    • METIS-201733
    • EWI-14351
    • IR-67636

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