A 1-V 15µW high-precision temperature switch

Daniel Schinkel; R.P. de Boer; Anne J. Annema; Adrianus Johannes Maria van Tuijl

A 1-V 15µW high-precision temperature switch

Daniel Schinkel, R.P. de Boer, Anne J. Annema, Adrianus Johannes Maria van Tuijl

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

A CMOS temperature switch with uncalibrated high temperature accuracy is presented. The circuit is based on the classical CMOS bandgap reference structure, using parasitic PNPs and a PTAT multiplier. The circuit was designed in a standard digital 0.18 µm CMOS process. The temperature switch has a in-designed hysteresis of 1.2° C around a threshold value of 128° C. At the switching-threshold all matched transistors have also matched operating conditions, yielding a temperature threshold that is highly independent of transistor output resistance and supply voltage. With a chip area of only 0.03 mm2:, the on-wafer 3σ spread of the threshold temperature is 1.1° C. Power consumption is only 15 µA at 1 Volt supply.

Original language	English
Title of host publication	27th European Solid-State Circuits Conference (ESSCIRC 2001)
Place of Publication	Villach, Austria
Publisher	Carinthia Tech Institute
Pages	104-107
Number of pages	4
ISBN (Print)	291460100x
Publication status	Published - Sept 2001
Event	27th European Solid-State Circuits Conference, ESSCIRC 2001 - Villach, Austria Duration: 18 Sept 2001 → 20 Sept 2001

Conference

Conference	27th European Solid-State Circuits Conference, ESSCIRC 2001
Abbreviated title	ESSCIRC
Country/Territory	Austria
City	Villach
Period	18/09/01 → 20/09/01

Keywords

METIS-201733
EWI-14351
IR-67636

Access to Document

http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1471338

Cite this

@inproceedings{508624c7e7eb4a1f81c0c35f0de9b855,

title = "A 1-V 15µW high-precision temperature switch",

abstract = "A CMOS temperature switch with uncalibrated high temperature accuracy is presented. The circuit is based on the classical CMOS bandgap reference structure, using parasitic PNPs and a PTAT multiplier. The circuit was designed in a standard digital 0.18 µm CMOS process. The temperature switch has a in-designed hysteresis of 1.2° C around a threshold value of 128° C. At the switching-threshold all matched transistors have also matched operating conditions, yielding a temperature threshold that is highly independent of transistor output resistance and supply voltage. With a chip area of only 0.03 mm2:, the on-wafer 3σ spread of the threshold temperature is 1.1° C. Power consumption is only 15 µA at 1 Volt supply.",

keywords = "METIS-201733, EWI-14351, IR-67636",

author = "Daniel Schinkel and \{de Boer\}, R.P. and Annema, \{Anne J.\} and \{van Tuijl\}, \{Adrianus Johannes Maria\}",

year = "2001",

month = sep,

language = "English",

isbn = "291460100x",

pages = "104--107",

booktitle = "27th European Solid-State Circuits Conference (ESSCIRC 2001)",

publisher = "Carinthia Tech Institute",

note = "27th European Solid-State Circuits Conference, ESSCIRC 2001, ESSCIRC ; Conference date: 18-09-2001 Through 20-09-2001",

}

Schinkel, D, de Boer, RP, Annema, AJ & van Tuijl, AJM 2001, A 1-V 15µW high-precision temperature switch. in 27th European Solid-State Circuits Conference (ESSCIRC 2001). Carinthia Tech Institute, Villach, Austria, pp. 104-107, 27th European Solid-State Circuits Conference, ESSCIRC 2001, Villach, Austria, 18/09/01. <http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1471338>

TY - GEN

T1 - A 1-V 15µW high-precision temperature switch

AU - Schinkel, Daniel

AU - de Boer, R.P.

AU - Annema, Anne J.

AU - van Tuijl, Adrianus Johannes Maria

PY - 2001/9

Y1 - 2001/9

N2 - A CMOS temperature switch with uncalibrated high temperature accuracy is presented. The circuit is based on the classical CMOS bandgap reference structure, using parasitic PNPs and a PTAT multiplier. The circuit was designed in a standard digital 0.18 µm CMOS process. The temperature switch has a in-designed hysteresis of 1.2° C around a threshold value of 128° C. At the switching-threshold all matched transistors have also matched operating conditions, yielding a temperature threshold that is highly independent of transistor output resistance and supply voltage. With a chip area of only 0.03 mm2:, the on-wafer 3σ spread of the threshold temperature is 1.1° C. Power consumption is only 15 µA at 1 Volt supply.

AB - A CMOS temperature switch with uncalibrated high temperature accuracy is presented. The circuit is based on the classical CMOS bandgap reference structure, using parasitic PNPs and a PTAT multiplier. The circuit was designed in a standard digital 0.18 µm CMOS process. The temperature switch has a in-designed hysteresis of 1.2° C around a threshold value of 128° C. At the switching-threshold all matched transistors have also matched operating conditions, yielding a temperature threshold that is highly independent of transistor output resistance and supply voltage. With a chip area of only 0.03 mm2:, the on-wafer 3σ spread of the threshold temperature is 1.1° C. Power consumption is only 15 µA at 1 Volt supply.

KW - METIS-201733

KW - EWI-14351

KW - IR-67636

M3 - Conference contribution

SN - 291460100x

SP - 104

EP - 107

BT - 27th European Solid-State Circuits Conference (ESSCIRC 2001)

PB - Carinthia Tech Institute

CY - Villach, Austria

T2 - 27th European Solid-State Circuits Conference, ESSCIRC 2001

Y2 - 18 September 2001 through 20 September 2001

ER -

A 1-V 15µW high-precision temperature switch

Abstract

Conference

Keywords

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