A 1-V 15 μW High-Accuracy Temperature Switch

Daniel Schinkel, R.P. de Boer, Anne J. Annema, Adrianus Johannes Maria van Tuijl

    Research output: Contribution to journalArticleAcademicpeer-review

    1 Citation (Scopus)

    Abstract

    A CMOS temperature switch with uncalibrated high accuracy is presented. The circuit is based on the classical CMOS bandgap reference structure, using parasitic PNPs and a PTAT multiplier. The circuit was designed in a standard digital 0.18 m CMOS process. The temperature switch has an in-designed hysteresis of 1.2°C around a threshold value of 128°C. At the switching-threshold all matched transistors have also matched operating conditions, yielding a temperature threshold that is highly independent of transistor output resistance and supply voltage. The chip area was minimized using a novel and generic strategy. With a chip area of only 0.03 mm2, the onwafer 3 spread of the threshold temperature is 1.1°C. Power consumption is only 15 A at 1 volt supply.
    Original languageEnglish
    Pages (from-to)13-20
    Number of pages8
    JournalAnalog integrated circuits and signal processing
    Volume41
    Issue number1
    DOIs
    Publication statusPublished - Oct 2004

    Keywords

    • Circuit design
    • CMOS
    • IR-67659
    • METIS-220567
    • EWI-14468
    • bandgap reference
    • design strategy
    • temperature switch

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