Abstract
A CMOS temperature switch with uncalibrated high accuracy is presented. The circuit is based on the classical CMOS bandgap reference structure, using parasitic PNPs and a PTAT multiplier. The circuit was designed in a standard digital 0.18 m CMOS process. The temperature switch has an in-designed hysteresis of 1.2°C around a threshold value of 128°C. At the switching-threshold all matched transistors have also matched operating conditions, yielding a temperature threshold that is highly independent of transistor output resistance and supply voltage. The chip area was minimized using a novel and generic strategy. With a chip area of only 0.03 mm2, the onwafer 3 spread of the threshold temperature is 1.1°C. Power consumption is only 15 A at 1 volt supply.
| Original language | English |
|---|---|
| Pages (from-to) | 13-20 |
| Number of pages | 8 |
| Journal | Analog integrated circuits and signal processing |
| Volume | 41 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Oct 2004 |
Keywords
- Circuit design
- CMOS
- IR-67659
- METIS-220567
- EWI-14468
- bandgap reference
- design strategy
- temperature switch
Fingerprint
Dive into the research topics of 'A 1-V 15 μW High-Accuracy Temperature Switch'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver