A 1.2-V 10- µW NPN-Based Temperature Sensor in 65-nm CMOS With an Inaccuracy of 0.2 °C (3σ) From 70 °C to 125 °C

Fabio Sebastiano, Lucien J. Breems, Kofi A.A. Makinwa, S. Drago, Domine M.W. Leenaerts, Bram Nauta

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    Abstract

    An NPN-based temperature sensor with digital output transistors has been realized in a 65-nm CMOS process. It achieves a batch-calibrated inaccuracy of ±0.5 ◦C (3¾) and a trimmed inaccuracy of ±0.2 ◦C (3¾) over the temperature range from −70 ◦C to 125 ◦C. This performance is obtained by the use of NPN transistors as sensing elements, the use of dynamic techniques, i.e. correlated double sampling and dynamic element matching, and a single room-temperature trim. The sensor draws 8.3 μA from a 1.2-V supply and occupies an area of 0.1 mm2.
    Original languageEnglish
    Pages (from-to)2591-2601
    Number of pages11
    JournalIEEE journal of solid-state circuits
    Volume45
    Issue number12
    DOIs
    Publication statusPublished - 1 Dec 2010

    Keywords

    • CMOS analog integrated circuits
    • IR-75260
    • METIS-275785
    • EWI-19100
    • smart sensors
    • sigma-delta modulation
    • Temperature sensors

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