A 65-nm CMOS Temperature-Compensated Mobility-Based Frequency Reference for Wireless Sensor Networks

Fabio Sebastiano; Lucien J. Breems; Kofi A.A. Makinwa; S. Drago; Domine M.W. Leenaerts; Bram Nauta

doi:10.1109/JSSC.2011.2143630

A 65-nm CMOS Temperature-Compensated Mobility-Based Frequency Reference for Wireless Sensor Networks

Fabio Sebastiano, Lucien J. Breems, Kofi A.A. Makinwa, S. Drago, Domine M.W. Leenaerts, Bram Nauta

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Abstract

A temperature-compensated CMOS frequency reference based on the electron mobility in a MOS transistor is presented. Over the temperature range from -55°C to 125°C , the frequency spread of the complete reference is less than ±0.5% after a two-point trim and less than ±2.7% after a one-point trim. These results make it suitable for use in Wireless Sensor Network nodes. Fabricated in a baseline 65-nm CMOS process, the 150 kHz frequency reference occupies 0.2 mm2 and draws 42.6 μA from a 1.2-V supply at room temperature.

Original language	English
Pages (from-to)	1544-1552
Number of pages	9
Journal	IEEE journal of solid-state circuits
Volume	46
Issue number	7
DOIs	https://doi.org/10.1109/JSSC.2011.2143630
Publication status	Published - 1 Jul 2011

Keywords

EWI-20414
METIS-278753
IR-78283

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10.1109/JSSC.2011.2143630

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title = "A 65-nm CMOS Temperature-Compensated Mobility-Based Frequency Reference for Wireless Sensor Networks",

abstract = "A temperature-compensated CMOS frequency reference based on the electron mobility in a MOS transistor is presented. Over the temperature range from -55°C to 125°C , the frequency spread of the complete reference is less than ±0.5% after a two-point trim and less than ±2.7% after a one-point trim. These results make it suitable for use in Wireless Sensor Network nodes. Fabricated in a baseline 65-nm CMOS process, the 150 kHz frequency reference occupies 0.2 mm2 and draws 42.6 μA from a 1.2-V supply at room temperature.",

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AU - Sebastiano, Fabio

AU - Breems, Lucien J.

AU - Makinwa, Kofi A.A.

AU - Drago, S.

AU - Leenaerts, Domine M.W.

AU - Nauta, Bram

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AB - A temperature-compensated CMOS frequency reference based on the electron mobility in a MOS transistor is presented. Over the temperature range from -55°C to 125°C , the frequency spread of the complete reference is less than ±0.5% after a two-point trim and less than ±2.7% after a one-point trim. These results make it suitable for use in Wireless Sensor Network nodes. Fabricated in a baseline 65-nm CMOS process, the 150 kHz frequency reference occupies 0.2 mm2 and draws 42.6 μA from a 1.2-V supply at room temperature.

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KW - METIS-278753

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JO - IEEE journal of solid-state circuits

JF - IEEE journal of solid-state circuits

IS - 7

ER -

A 65-nm CMOS Temperature-Compensated Mobility-Based Frequency Reference for Wireless Sensor Networks

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Keywords

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