A 65-nm CMOS Temperature-Compensated Mobility-Based Frequency Reference for Wireless Sensor Networks

Fabio Sebastiano, Lucien J. Breems, Kofi A.A. Makinwa, S. Drago, Domine M.W. Leenaerts, Bram Nauta

    Research output: Contribution to journalArticleAcademicpeer-review

    28 Citations (Scopus)
    33 Downloads (Pure)

    Abstract

    A temperature-compensated CMOS frequency reference based on the electron mobility in a MOS transistor is presented. Over the temperature range from -55°C to 125°C , the frequency spread of the complete reference is less than ±0.5% after a two-point trim and less than ±2.7% after a one-point trim. These results make it suitable for use in Wireless Sensor Network nodes. Fabricated in a baseline 65-nm CMOS process, the 150 kHz frequency reference occupies 0.2 mm2 and draws 42.6 μA from a 1.2-V supply at room temperature.
    Original languageEnglish
    Pages (from-to)1544-1552
    Number of pages9
    JournalIEEE journal of solid-state circuits
    Volume46
    Issue number7
    DOIs
    Publication statusPublished - 1 Jul 2011

    Keywords

    • EWI-20414
    • METIS-278753
    • IR-78283

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