A 65-nm CMOS Temperature-Compensated Mobility-Based Frequency reference for wireless sensor networks

Fabio Sebastiano, Lucien Breems, Kofi Makinwa, S. Drago, Domine Leenaerts, Bram Nauta

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    7 Citations (Scopus)
    70 Downloads (Pure)

    Abstract

    For the first time, a temperature-compensated CMOS frequency reference based on the electron mobility in a MOS transistor is presented. Over the temperature range from -55°C to 125 °C, its frequency spread is less than ±0.5% after a two-point trim and less than ±2.7% after a one-point trim. These results make it suitable for use in Wireless Sensor Network nodes. Fabricated in a baseline 65-nm CMOS process, the 150 kHz frequency reference occupies 0.2 mm2 and draws 42.6 μA from a 1.2-V supply at room temperature.
    Original languageEnglish
    Title of host publicationProceedings of the ESSCIRC 2010
    Place of PublicationPiscataway
    PublisherIEEE
    Pages102-105
    Number of pages4
    ISBN (Print)978-1-4244-6662-7
    DOIs
    Publication statusPublished - 13 Sep 2010
    Event36th European Solid-State Circuits Conference, ESSCIRC 2010 - Hotel Barcel Renacimiento, Sevilla, Spain
    Duration: 14 Sep 201016 Sep 2010
    Conference number: 36

    Conference

    Conference36th European Solid-State Circuits Conference, ESSCIRC 2010
    Abbreviated titleESSCIRC
    CountrySpain
    CitySevilla
    Period14/09/1016/09/10

    Keywords

    • METIS-275726
    • EWI-18908
    • IR-75698

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  • Cite this

    Sebastiano, F., Breems, L., Makinwa, K., Drago, S., Leenaerts, D., & Nauta, B. (2010). A 65-nm CMOS Temperature-Compensated Mobility-Based Frequency reference for wireless sensor networks. In Proceedings of the ESSCIRC 2010 (pp. 102-105). Piscataway: IEEE. https://doi.org/10.1109/ESSCIRC.2010.5619792