A 65-nm CMOS Temperature-Compensated Mobility-Based Frequency reference for wireless sensor networks

Fabio Sebastiano; Lucien Breems; Kofi Makinwa; S. Drago; Domine Leenaerts; Bram Nauta

doi:10.1109/ESSCIRC.2010.5619792

A 65-nm CMOS Temperature-Compensated Mobility-Based Frequency reference for wireless sensor networks

Fabio Sebastiano
, Lucien Breems
, Kofi Makinwa
, S. Drago
, Domine Leenaerts
, Bram Nauta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

8 Citations (Scopus)

563 Downloads (Pure)

Abstract

For the first time, a temperature-compensated CMOS frequency reference based on the electron mobility in a MOS transistor is presented. Over the temperature range from -55°C to 125 °C, its frequency spread is less than ±0.5% after a two-point trim and less than ±2.7% after a one-point trim. These results make it suitable for use in Wireless Sensor Network nodes. Fabricated in a baseline 65-nm CMOS process, the 150 kHz frequency reference occupies 0.2 mm2 and draws 42.6 μA from a 1.2-V supply at room temperature.

Original language	English
Title of host publication	Proceedings of the ESSCIRC 2010
Place of Publication	Piscataway
Publisher	IEEE
Pages	102-105
Number of pages	4
ISBN (Print)	978-1-4244-6662-7
DOIs	https://doi.org/10.1109/ESSCIRC.2010.5619792
Publication status	Published - 13 Sept 2010
Event	36th European Solid-State Circuits Conference, ESSCIRC 2010 - Hotel Barcel Renacimiento, Sevilla, Spain Duration: 14 Sept 2010 → 16 Sept 2010 Conference number: 36

Conference

Conference	36th European Solid-State Circuits Conference, ESSCIRC 2010
Abbreviated title	ESSCIRC
Country/Territory	Spain
City	Sevilla
Period	14/09/10 → 16/09/10

Keywords

METIS-275726
EWI-18908
IR-75698

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10.1109/ESSCIRC.2010.5619792

Sebastiano_Esscirc_2010Accepted author version, 259 KB

Cite this

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title = "A 65-nm CMOS Temperature-Compensated Mobility-Based Frequency reference for wireless sensor networks",

abstract = "For the first time, a temperature-compensated CMOS frequency reference based on the electron mobility in a MOS transistor is presented. Over the temperature range from -55°C to 125 °C, its frequency spread is less than ±0.5\% after a two-point trim and less than ±2.7\% after a one-point trim. These results make it suitable for use in Wireless Sensor Network nodes. Fabricated in a baseline 65-nm CMOS process, the 150 kHz frequency reference occupies 0.2 mm2 and draws 42.6 μA from a 1.2-V supply at room temperature.",

keywords = "METIS-275726, EWI-18908, IR-75698",

author = "Fabio Sebastiano and Lucien Breems and Kofi Makinwa and S. Drago and Domine Leenaerts and Bram Nauta",

year = "2010",

month = sep,

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doi = "10.1109/ESSCIRC.2010.5619792",

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pages = "102--105",

booktitle = "Proceedings of the ESSCIRC 2010",

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Sebastiano, F, Breems, L, Makinwa, K, Drago, S, Leenaerts, D & Nauta, B 2010, A 65-nm CMOS Temperature-Compensated Mobility-Based Frequency reference for wireless sensor networks. in Proceedings of the ESSCIRC 2010. IEEE, Piscataway, pp. 102-105, 36th European Solid-State Circuits Conference, ESSCIRC 2010, Sevilla, Spain, 14/09/10. https://doi.org/10.1109/ESSCIRC.2010.5619792

TY - GEN

T1 - A 65-nm CMOS Temperature-Compensated Mobility-Based Frequency reference for wireless sensor networks

AU - Sebastiano, Fabio

AU - Breems, Lucien

AU - Makinwa, Kofi

AU - Drago, S.

AU - Leenaerts, Domine

AU - Nauta, Bram

N1 - Conference code: 36

PY - 2010/9/13

Y1 - 2010/9/13

N2 - For the first time, a temperature-compensated CMOS frequency reference based on the electron mobility in a MOS transistor is presented. Over the temperature range from -55°C to 125 °C, its frequency spread is less than ±0.5% after a two-point trim and less than ±2.7% after a one-point trim. These results make it suitable for use in Wireless Sensor Network nodes. Fabricated in a baseline 65-nm CMOS process, the 150 kHz frequency reference occupies 0.2 mm2 and draws 42.6 μA from a 1.2-V supply at room temperature.

AB - For the first time, a temperature-compensated CMOS frequency reference based on the electron mobility in a MOS transistor is presented. Over the temperature range from -55°C to 125 °C, its frequency spread is less than ±0.5% after a two-point trim and less than ±2.7% after a one-point trim. These results make it suitable for use in Wireless Sensor Network nodes. Fabricated in a baseline 65-nm CMOS process, the 150 kHz frequency reference occupies 0.2 mm2 and draws 42.6 μA from a 1.2-V supply at room temperature.

KW - METIS-275726

KW - EWI-18908

KW - IR-75698

U2 - 10.1109/ESSCIRC.2010.5619792

DO - 10.1109/ESSCIRC.2010.5619792

M3 - Conference contribution

SN - 978-1-4244-6662-7

SP - 102

EP - 105

BT - Proceedings of the ESSCIRC 2010

PB - IEEE

CY - Piscataway

T2 - 36th European Solid-State Circuits Conference, ESSCIRC 2010

Y2 - 14 September 2010 through 16 September 2010

ER -

A 65-nm CMOS Temperature-Compensated Mobility-Based Frequency reference for wireless sensor networks

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Keywords

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