Abstract
In this work the Gm-C topology is adopted for its merits at high frequencies. In this technique, two critical parameters should be accounted for: the accuracy of the Q factors of the pole pairs (for correct transfer function) and parasitic capacitances (for maximal cut-off frequency). The former point is influenced by the phase shift of the integrators compounding the filter in the neighborhood of the filter's edge frequency. This phase error is due to two antagonistic effects which are the integrator's finite DC gain and its high-frequency poles/zeros.
| Original language | English |
|---|---|
| Title of host publication | IEEE International Solid-State Circuits Conference Digest of Technical Papers, ISSCC 2012 |
| Place of Publication | Piscataway |
| Publisher | IEEE |
| Pages | 362-364 |
| Number of pages | 3 |
| ISBN (Print) | 978-1-4673-0376-7 |
| DOIs | |
| Publication status | Published - 19 Feb 2012 |
| Event | IEEE International Solid-State Circuits Conference, ISSCC 2012 - San Francisco, United States Duration: 19 Feb 2012 → 23 Feb 2012 |
Conference
| Conference | IEEE International Solid-State Circuits Conference, ISSCC 2012 |
|---|---|
| Abbreviated title | ISSCC |
| Country/Territory | United States |
| City | San Francisco |
| Period | 19/02/12 → 23/02/12 |
Keywords
- IR-80241
- EWI-21783
- METIS-286335