A 90μW 12MHz Relaxation Oscillator with a -162dB FOM

P.F.J. Geraedts; Adrianus Johannes Maria van Tuijl; Eric A.M. Klumperink; Gerhardus J.M. Wienk; Bram Nauta

doi:10.1109/ISSCC.2008.4523200

A 90μW 12MHz Relaxation Oscillator with a -162dB FOM

P.F.J. Geraedts, Adrianus Johannes Maria van Tuijl, Eric A.M. Klumperink, Gerhardus J.M. Wienk, Bram Nauta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

62 Citations (Scopus)

331 Downloads (Pure)

Abstract

A relaxation oscillator exploits a noise filtering technique implemented with a switched-capacitor circuit to minimize phase noise. A 65nm CMOS design produces a sawtooth waveform, has a frequency tuning range of 1 to 12MHz and a constant frequency-tuning gain. By minimizing and balancing noise contributions from charge and discharge mechanisms, a FOM of -162dB is achieved, which is a 7dB improvement over state-of-the-art.

Original language	English
Title of host publication	2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers
Place of Publication	Piscataway
Publisher	IEEE
Number of pages	3
ISBN (Print)	978-1-4244-2011-7
DOIs	https://doi.org/10.1109/ISSCC.2008.4523200
Publication status	Published - 6 Feb 2008
Event	IEEE International Solid- State Circuits Conference, ISSCC 2008 - San Francisco, United States Duration: 3 Feb 2008 → 7 Feb 2008

Conference

Conference	IEEE International Solid- State Circuits Conference, ISSCC 2008
Abbreviated title	ISSCC
Country/Territory	United States
City	San Francisco
Period	3/02/08 → 7/02/08

Keywords

EWI-13060
IR-64878
METIS-251079

Access to Document

10.1109/ISSCC.2008.4523200

Geraedts_IEEE_ISSCC_2008Final published version, 710 KB

Cite this

@inproceedings{8e458c9c9fb645c99f0c166fa671d05a,

title = "A 90μW 12MHz Relaxation Oscillator with a -162dB FOM",

abstract = "A relaxation oscillator exploits a noise filtering technique implemented with a switched-capacitor circuit to minimize phase noise. A 65nm CMOS design produces a sawtooth waveform, has a frequency tuning range of 1 to 12MHz and a constant frequency-tuning gain. By minimizing and balancing noise contributions from charge and discharge mechanisms, a FOM of -162dB is achieved, which is a 7dB improvement over state-of-the-art.",

keywords = "EWI-13060, IR-64878, METIS-251079",

author = "P.F.J. Geraedts and {van Tuijl}, {Adrianus Johannes Maria} and Klumperink, {Eric A.M.} and Wienk, {Gerhardus J.M.} and Bram Nauta",

year = "2008",

month = feb,

day = "6",

doi = "10.1109/ISSCC.2008.4523200",

language = "English",

isbn = "978-1-4244-2011-7",

booktitle = "2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers",

publisher = "IEEE",

address = "United States",

note = "IEEE International Solid- State Circuits Conference, ISSCC 2008, ISSCC ; Conference date: 03-02-2008 Through 07-02-2008",

}

Geraedts, PFJ, van Tuijl, AJM, Klumperink, EAM, Wienk, GJM & Nauta, B 2008, A 90μW 12MHz Relaxation Oscillator with a -162dB FOM. in 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers. IEEE, Piscataway, IEEE International Solid- State Circuits Conference, ISSCC 2008, San Francisco, California, United States, 3/02/08. https://doi.org/10.1109/ISSCC.2008.4523200

TY - GEN

T1 - A 90μW 12MHz Relaxation Oscillator with a -162dB FOM

AU - Geraedts, P.F.J.

AU - van Tuijl, Adrianus Johannes Maria

AU - Klumperink, Eric A.M.

AU - Wienk, Gerhardus J.M.

AU - Nauta, Bram

PY - 2008/2/6

Y1 - 2008/2/6

N2 - A relaxation oscillator exploits a noise filtering technique implemented with a switched-capacitor circuit to minimize phase noise. A 65nm CMOS design produces a sawtooth waveform, has a frequency tuning range of 1 to 12MHz and a constant frequency-tuning gain. By minimizing and balancing noise contributions from charge and discharge mechanisms, a FOM of -162dB is achieved, which is a 7dB improvement over state-of-the-art.

AB - A relaxation oscillator exploits a noise filtering technique implemented with a switched-capacitor circuit to minimize phase noise. A 65nm CMOS design produces a sawtooth waveform, has a frequency tuning range of 1 to 12MHz and a constant frequency-tuning gain. By minimizing and balancing noise contributions from charge and discharge mechanisms, a FOM of -162dB is achieved, which is a 7dB improvement over state-of-the-art.

KW - EWI-13060

KW - IR-64878

KW - METIS-251079

U2 - 10.1109/ISSCC.2008.4523200

DO - 10.1109/ISSCC.2008.4523200

M3 - Conference contribution

SN - 978-1-4244-2011-7

BT - 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers

PB - IEEE

CY - Piscataway

T2 - IEEE International Solid- State Circuits Conference, ISSCC 2008

Y2 - 3 February 2008 through 7 February 2008

ER -

A 90μW 12MHz Relaxation Oscillator with a -162dB FOM

Abstract

Conference

Keywords

Access to Document

Fingerprint

Cite this