A back-wafer contacted silicon-on-glass integrated bipolar process - Part I: The conflict electrical versus thermal isolation

Lis K. Nanver*, Nebojša Nenadović, Vincenzo D'Alessandro, Hugo Schellevis, Henk W. Van Zeijl, Ronald Dekker, Dick B. De Mooij, Victor Zieren, Jan W. Slotboom

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

59 Citations (Scopus)

Abstract

A novel silicon-on-glass integrated bipolar technology is presented. The transfer to glass is performed by gluing and subsequent removal of the bulk silicon to a buried oxide layer. Low-ohmic collector contacts are processed on the back-wafer by implantation and dopant activation by excimer laser annealing. The improved electrical isolation with reduced collector-base capacitance, collector resistance and substrate capacitance, also provide an extremely good thermal isolation. The devices are electrothermally characterized in relationship to different heat-spreader designs by electrical measurement and nematic liquid crystal imaging. Accurate values of the temperature at thermal breakdown and thermal resistance are extracted from current-controlled Gummel plot measurements.

Original languageEnglish
Pages (from-to)42-50
Number of pages9
JournalIEEE transactions on electron devices
Volume51
Issue number1
DOIs
Publication statusPublished - 1 Jan 2004
Externally publishedYes

Keywords

  • Bipolar transistors
  • Laser annealing
  • Liquid crystal microscopy
  • Radio frequency (RF) process integration
  • Silicon-on-glass
  • Silicon-on-insulator (SOI)
  • Thermal management
  • Thermomapping

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