Abstract
A novel silicon-on-glass integrated bipolar technology is presented. The transfer to glass is performed by gluing and subsequent removal of the bulk silicon to a buried oxide layer. Low-ohmic collector contacts are processed on the back-wafer by implantation and dopant activation by excimer laser annealing. The improved electrical isolation with reduced collector-base capacitance, collector resistance and substrate capacitance, also provide an extremely good thermal isolation. The devices are electrothermally characterized in relationship to different heat-spreader designs by electrical measurement and nematic liquid crystal imaging. Accurate values of the temperature at thermal breakdown and thermal resistance are extracted from current-controlled Gummel plot measurements.
Original language | English |
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Pages (from-to) | 42-50 |
Number of pages | 9 |
Journal | IEEE Transactions on Electron Devices |
Volume | 51 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1 Jan 2004 |
Externally published | Yes |
Keywords
- Bipolar transistors
- Laser annealing
- Liquid crystal microscopy
- Radio frequency (RF) process integration
- Silicon-on-glass
- Silicon-on-insulator (SOI)
- Thermal management
- Thermomapping