A back-wafer contacted silicon-on-glass integrated bipolar process - Part II: A novel analysis of thermal breakdown

Nebojša Nenadović; Vincenzo D'Alessandro; Lis K. Nanver; Fabrizio Tamigi; Niccolò Rinaldi; Jan W. Slotboom

doi:10.1109/TED.2003.820654

A back-wafer contacted silicon-on-glass integrated bipolar process - Part II: A novel analysis of thermal breakdown

Nebojša Nenadović, Vincenzo D'Alessandro, Lis K. Nanver^*, Fabrizio Tamigi, Niccolò Rinaldi, Jan W. Slotboom

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

63 Citations (Scopus)

Abstract

Analytical expressions for the electrothermal parameters governing thermal instability in bipolar transistors, i.e., thermal resistance R_TH, critical temperature T_{cr it} and critical current J_{C, cr it}, are established and verified by measurements on silicon-on-glass bipolar NPNs. A minimum junction temperature increase above ambient due to selfheating that can cause thermal breakdown is identified and verified to be as low as 10-20°C. The influence of internal and external series resistances and the thermal resistance explicitly included in the expressions for T_{cr it} and J_{C, cr it} becomes clear. The use of the derived expressions for determining the safe operating area of a device and for extracting the thermal resistance is demonstrated.

Original language	English
Pages (from-to)	51-62
Number of pages	12
Journal	IEEE Transactions on Electron Devices
Volume	51
Issue number	1
DOIs	https://doi.org/10.1109/TED.2003.820654
Publication status	Published - 1 Jan 2004
Externally published	Yes

Keywords

Bipolar transistors
Radio frequency (RF) technologies
Silicon-on-glass
Thermal breakdown
Thermal management
Thermal resistance

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10.1109/TED.2003.820654

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title = "A back-wafer contacted silicon-on-glass integrated bipolar process - Part II: A novel analysis of thermal breakdown",

abstract = "Analytical expressions for the electrothermal parameters governing thermal instability in bipolar transistors, i.e., thermal resistance RTH, critical temperature Tcr it and critical current JC, cr it, are established and verified by measurements on silicon-on-glass bipolar NPNs. A minimum junction temperature increase above ambient due to selfheating that can cause thermal breakdown is identified and verified to be as low as 10-20°C. The influence of internal and external series resistances and the thermal resistance explicitly included in the expressions for Tcr it and JC, cr it becomes clear. The use of the derived expressions for determining the safe operating area of a device and for extracting the thermal resistance is demonstrated.",

keywords = "Bipolar transistors, Radio frequency (RF) technologies, Silicon-on-glass, Thermal breakdown, Thermal management, Thermal resistance",

author = "Neboj{\v s}a Nenadovi{\'c} and Vincenzo D'Alessandro and Nanver, {Lis K.} and Fabrizio Tamigi and Niccol{\`o} Rinaldi and Slotboom, {Jan W.}",

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T1 - A back-wafer contacted silicon-on-glass integrated bipolar process - Part II

T2 - A novel analysis of thermal breakdown

AU - Nenadović, Nebojša

AU - D'Alessandro, Vincenzo

AU - Nanver, Lis K.

AU - Tamigi, Fabrizio

AU - Rinaldi, Niccolò

AU - Slotboom, Jan W.

PY - 2004/1/1

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N2 - Analytical expressions for the electrothermal parameters governing thermal instability in bipolar transistors, i.e., thermal resistance RTH, critical temperature Tcr it and critical current JC, cr it, are established and verified by measurements on silicon-on-glass bipolar NPNs. A minimum junction temperature increase above ambient due to selfheating that can cause thermal breakdown is identified and verified to be as low as 10-20°C. The influence of internal and external series resistances and the thermal resistance explicitly included in the expressions for Tcr it and JC, cr it becomes clear. The use of the derived expressions for determining the safe operating area of a device and for extracting the thermal resistance is demonstrated.

AB - Analytical expressions for the electrothermal parameters governing thermal instability in bipolar transistors, i.e., thermal resistance RTH, critical temperature Tcr it and critical current JC, cr it, are established and verified by measurements on silicon-on-glass bipolar NPNs. A minimum junction temperature increase above ambient due to selfheating that can cause thermal breakdown is identified and verified to be as low as 10-20°C. The influence of internal and external series resistances and the thermal resistance explicitly included in the expressions for Tcr it and JC, cr it becomes clear. The use of the derived expressions for determining the safe operating area of a device and for extracting the thermal resistance is demonstrated.

KW - Bipolar transistors

KW - Radio frequency (RF) technologies

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KW - Thermal breakdown

KW - Thermal management

KW - Thermal resistance

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A back-wafer contacted silicon-on-glass integrated bipolar process - Part II: A novel analysis of thermal breakdown

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