A back-wafer contacted silicon-on-glass integrated bipolar process - Part II: A novel analysis of thermal breakdown

Nebojša Nenadović, Vincenzo D'Alessandro, Lis K. Nanver*, Fabrizio Tamigi, Niccolò Rinaldi, Jan W. Slotboom

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

61 Citations (Scopus)

Abstract

Analytical expressions for the electrothermal parameters governing thermal instability in bipolar transistors, i.e., thermal resistance RTH, critical temperature Tcr it and critical current JC, cr it, are established and verified by measurements on silicon-on-glass bipolar NPNs. A minimum junction temperature increase above ambient due to selfheating that can cause thermal breakdown is identified and verified to be as low as 10-20°C. The influence of internal and external series resistances and the thermal resistance explicitly included in the expressions for Tcr it and JC, cr it becomes clear. The use of the derived expressions for determining the safe operating area of a device and for extracting the thermal resistance is demonstrated.

Original languageEnglish
Pages (from-to)51-62
Number of pages12
JournalIEEE Transactions on Electron Devices
Volume51
Issue number1
DOIs
Publication statusPublished - 1 Jan 2004
Externally publishedYes

Keywords

  • Bipolar transistors
  • Radio frequency (RF) technologies
  • Silicon-on-glass
  • Thermal breakdown
  • Thermal management
  • Thermal resistance

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