A-BCD: An economic 100V RESURF silicon-on-insulator BCD technology for consumer and automotive applications

J. A. Van Der Pol, A. W. Ludikhuize*, H. G A Huizing, B. Van Velzen, R. J E Hueting, J. F. Mom, G. Van Lijnschoten, G. J J Hessels, E. F. Hooghoudt, R. Van Huizen, M. J. Swanenberg, J. H H A Egbers, F. Van Den Elshout, J. J. Koning, H. Schligtenhorst, J. Soeteman

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

53 Citations (Scopus)

Abstract

A-BCD is a family of 100V BCD processes on SOI offering latchup free operation, improved robustness, superior EMC performance, higher packing density, lower mask count, high temperature and higher frequency operation and easier design over bulk silicon technology. A wide of a passive and active (5/12/25/60 and 100V) devices are available. Device design trade-offs for n- and p-type LDMOS and extended drain PMOS are discussed in detail. This and the low mask count makes it a versatile process for cost-sensitive consumer and automotive markets.

Original languageEnglish
Title of host publication12th International Symposium on Power Semiconductor Devices & ICs. Proceedings
PublisherIEEE
Pages327-330
Number of pages4
ISBN (Print)0-7803-6269-1
DOIs
Publication statusPublished - 1 Dec 2000
Externally publishedYes
Event12th International Symposium on Power Semiconductor Devices and ICs 2000 - Toulouse, France
Duration: 22 May 200025 May 2000
Conference number: 12

Conference

Conference12th International Symposium on Power Semiconductor Devices and ICs 2000
Abbreviated titleISPSD 2000
CountryFrance
CityToulouse
Period22/05/0025/05/00

Keywords

  • BCD
  • DMOS
  • High voltage
  • RESURF
  • Silicon-on-insulator
  • Smart power

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    Van Der Pol, J. A., Ludikhuize, A. W., Huizing, H. G. A., Van Velzen, B., Hueting, R. J. E., Mom, J. F., ... Soeteman, J. (2000). A-BCD: An economic 100V RESURF silicon-on-insulator BCD technology for consumer and automotive applications. In 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (pp. 327-330). IEEE. https://doi.org/10.1109/ISPSD.2000.856836