A Black Phosphorus Carbide Infrared Phototransistor

Photodetectors with broadband detection capability are desirable for sensing applications in the coming age of the internet‐of‐things. Although 2D layered materials (2DMs) have been actively pursued due to their unique optical properties, by far only graphene and black arsenic phosphorus have the wide absorption spectrum that covers most molecular vibrational fingerprints. However, their reported responsivity and response time are falling short of the requirements needed for enabling simultaneous weak‐signal and high‐speed detections. Here, a novel 2DM, black phosphorous carbide (b‐PC) with a wide absorption spectrum up to 8000 nm is synthesized and a b‐PC phototransistor with a tunable responsivity and response time at an excitation wavelength of 2004 nm is demonstrated. The b‐PC phototransistor achieves a peak responsivity of 2163 A W−1 and a shot noise equivalent power of 1.3 fW Hz−1/2 at 2004 nm. In addition, it is shown that a response time of 0.7 ns is tunable by the gating effect, which renders it versatile for high‐speed applications. Under the same signal strength (i.e., excitation power), its performance in responsivity and detectivity in room temperature condition is currently ahead of recent top‐performing photodetectors based on 2DMs that operate with a small bias voltage of 0.2 V.