A buried-channel charge-coupled device with non-overlapping gate structure for a CMOS/BCCD process

Leo Warmerdam, L.F.P. Warmerdam, Hans Wallinga

    Research output: Contribution to journalArticleAcademicpeer-review

    Abstract

    A buried-channel CCD is presented, suitable for integration in a high-energy ion-implanted CMOS process. The BCCD channel is high-energy ion-implanted and the gate structure is non-overlapping. The required submicron spacings between adjacent gates are created by a sequence of processing steps. No demands are imposed on the lithography used. SEM photographs show a well-defined gate structure with straight spacings exhibiting minor width variation. The parasitic potential well, associated with the presence of spacing between the gates, has little influence on charge transport performance. Delay lines have been operated with transfer inefficiency of 10-5 and less.
    Original languageEnglish
    Pages (from-to)658-663
    JournalSemiconductor science and technology
    Volume7
    Issue number5
    DOIs
    Publication statusPublished - 1992

    Keywords

    • METIS-112042
    • IR-96395

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