A CMOS compatible Ge avalanche photodiode is fabricated on Si by using a selective chemical-vapor deposition (CVD) epitaxial growth technique. At a temperature of 700°C, single crystal islands of As-doped Ge are grown in windows to the Si with sizes up to hundreds of μm2, to a layer thickness of approximately 1 μm, This is followed by a pure Ga and then a pure B (PureGaB) deposition for the creation of an ultrashallow p +-region that can be metallized by Al. The resulting p +n diodes have exceptionally good I-V characteristics with ideality factors of ∼ 1.1 and reliably low saturation currents. The measurements show high sensitivity of the photodiodes to IR wavelengths above 1μm in avalanche and Geiger modes.
|Title of host publication||2011 International Electron Devices Meeting, IEDM 2011|
|Publication status||Published - 1 Dec 2011|
|Event||2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, United States|
Duration: 5 Dec 2011 → 7 Dec 2011
|Conference||2011 IEEE International Electron Devices Meeting, IEDM 2011|
|Abbreviated title||IEDM 2011|
|Period||5/12/11 → 7/12/11|