A CMOS compatible Ge-on-Si APD operating in proportional and Geiger modes at infrared wavelengths

Amir Sammak; Mahdi Aminian; Lin Qi; Wiebe B. De Boer; Edoardo Charbon; Lis K. Nanver

doi:10.1109/IEDM.2011.6131515

A CMOS compatible Ge-on-Si APD operating in proportional and Geiger modes at infrared wavelengths

Amir Sammak^*, Mahdi Aminian, Lin Qi, Wiebe B. De Boer, Edoardo Charbon, Lis K. Nanver

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

20 Citations (Scopus)

Abstract

A CMOS compatible Ge avalanche photodiode is fabricated on Si by using a selective chemical-vapor deposition (CVD) epitaxial growth technique. At a temperature of 700°C, single crystal islands of As-doped Ge are grown in windows to the Si with sizes up to hundreds of μm2, to a layer thickness of approximately 1 μm, This is followed by a pure Ga and then a pure B (PureGaB) deposition for the creation of an ultrashallow p ⁺-region that can be metallized by Al. The resulting p ⁺n diodes have exceptionally good I-V characteristics with ideality factors of ∼ 1.1 and reliably low saturation currents. The measurements show high sensitivity of the photodiodes to IR wavelengths above 1μm in avalanche and Geiger modes.

Original language	English
Title of host publication	2011 International Electron Devices Meeting, IEDM 2011
DOIs	https://doi.org/10.1109/IEDM.2011.6131515
Publication status	Published - 1 Dec 2011
Externally published	Yes
Event	2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, United States Duration: 5 Dec 2011 → 7 Dec 2011

Conference

Conference	2011 IEEE International Electron Devices Meeting, IEDM 2011
Abbreviated title	IEDM 2011
Country/Territory	United States
City	Washington
Period	5/12/11 → 7/12/11

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title = "A CMOS compatible Ge-on-Si APD operating in proportional and Geiger modes at infrared wavelengths",

abstract = "A CMOS compatible Ge avalanche photodiode is fabricated on Si by using a selective chemical-vapor deposition (CVD) epitaxial growth technique. At a temperature of 700°C, single crystal islands of As-doped Ge are grown in windows to the Si with sizes up to hundreds of μm2, to a layer thickness of approximately 1 μm, This is followed by a pure Ga and then a pure B (PureGaB) deposition for the creation of an ultrashallow p +-region that can be metallized by Al. The resulting p +n diodes have exceptionally good I-V characteristics with ideality factors of ∼ 1.1 and reliably low saturation currents. The measurements show high sensitivity of the photodiodes to IR wavelengths above 1μm in avalanche and Geiger modes.",

author = "Amir Sammak and Mahdi Aminian and Lin Qi and {De Boer}, {Wiebe B.} and Edoardo Charbon and Nanver, {Lis K.}",

year = "2011",

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doi = "10.1109/IEDM.2011.6131515",

language = "English",

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}

Sammak, A, Aminian, M, Qi, L, De Boer, WB, Charbon, E & Nanver, LK 2011, A CMOS compatible Ge-on-Si APD operating in proportional and Geiger modes at infrared wavelengths. in 2011 International Electron Devices Meeting, IEDM 2011., 6131515, 2011 IEEE International Electron Devices Meeting, IEDM 2011, Washington, District of Columbia, United States, 5/12/11. https://doi.org/10.1109/IEDM.2011.6131515

TY - GEN

T1 - A CMOS compatible Ge-on-Si APD operating in proportional and Geiger modes at infrared wavelengths

AU - Sammak, Amir

AU - Aminian, Mahdi

AU - Qi, Lin

AU - De Boer, Wiebe B.

AU - Charbon, Edoardo

AU - Nanver, Lis K.

PY - 2011/12/1

Y1 - 2011/12/1

N2 - A CMOS compatible Ge avalanche photodiode is fabricated on Si by using a selective chemical-vapor deposition (CVD) epitaxial growth technique. At a temperature of 700°C, single crystal islands of As-doped Ge are grown in windows to the Si with sizes up to hundreds of μm2, to a layer thickness of approximately 1 μm, This is followed by a pure Ga and then a pure B (PureGaB) deposition for the creation of an ultrashallow p +-region that can be metallized by Al. The resulting p +n diodes have exceptionally good I-V characteristics with ideality factors of ∼ 1.1 and reliably low saturation currents. The measurements show high sensitivity of the photodiodes to IR wavelengths above 1μm in avalanche and Geiger modes.

AB - A CMOS compatible Ge avalanche photodiode is fabricated on Si by using a selective chemical-vapor deposition (CVD) epitaxial growth technique. At a temperature of 700°C, single crystal islands of As-doped Ge are grown in windows to the Si with sizes up to hundreds of μm2, to a layer thickness of approximately 1 μm, This is followed by a pure Ga and then a pure B (PureGaB) deposition for the creation of an ultrashallow p +-region that can be metallized by Al. The resulting p +n diodes have exceptionally good I-V characteristics with ideality factors of ∼ 1.1 and reliably low saturation currents. The measurements show high sensitivity of the photodiodes to IR wavelengths above 1μm in avalanche and Geiger modes.

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U2 - 10.1109/IEDM.2011.6131515

DO - 10.1109/IEDM.2011.6131515

M3 - Conference contribution

AN - SCOPUS:84857008859

SN - 9781457705052

BT - 2011 International Electron Devices Meeting, IEDM 2011

T2 - 2011 IEEE International Electron Devices Meeting, IEDM 2011

Y2 - 5 December 2011 through 7 December 2011

ER -

A CMOS compatible Ge-on-Si APD operating in proportional and Geiger modes at infrared wavelengths

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