A CMOS compatible Ge-on-Si APD operating in proportional and Geiger modes at infrared wavelengths

Amir Sammak, Mahdi Aminian, Lin Qi, Wiebe B. De Boer, Edoardo Charbon, Lis K. Nanver

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

12 Citations (Scopus)

Abstract

A CMOS compatible Ge avalanche photodiode is fabricated on Si by using a selective chemical-vapor deposition (CVD) epitaxial growth technique. At a temperature of 700°C, single crystal islands of As-doped Ge are grown in windows to the Si with sizes up to hundreds of μm2, to a layer thickness of approximately 1 μm, This is followed by a pure Ga and then a pure B (PureGaB) deposition for the creation of an ultrashallow p +-region that can be metallized by Al. The resulting p +n diodes have exceptionally good I-V characteristics with ideality factors of ∼ 1.1 and reliably low saturation currents. The measurements show high sensitivity of the photodiodes to IR wavelengths above 1μm in avalanche and Geiger modes.

Original languageEnglish
Title of host publication2011 International Electron Devices Meeting, IEDM 2011
DOIs
Publication statusPublished - 1 Dec 2011
Externally publishedYes
Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, United States
Duration: 5 Dec 20117 Dec 2011

Conference

Conference2011 IEEE International Electron Devices Meeting, IEDM 2011
Abbreviated titleIEDM 2011
CountryUnited States
CityWashington
Period5/12/117/12/11

Fingerprint

pamidronate
Avalanche photodiodes
Photodiodes
Epitaxial growth
avalanches
photodiodes
Chemical vapor deposition
CMOS
Diodes
Single crystals
Infrared radiation
Wavelength
wavelengths
diodes
vapor deposition
saturation
Temperature
sensitivity
single crystals
temperature

Cite this

Sammak, A., Aminian, M., Qi, L., De Boer, W. B., Charbon, E., & Nanver, L. K. (2011). A CMOS compatible Ge-on-Si APD operating in proportional and Geiger modes at infrared wavelengths. In 2011 International Electron Devices Meeting, IEDM 2011 [6131515] https://doi.org/10.1109/IEDM.2011.6131515
Sammak, Amir ; Aminian, Mahdi ; Qi, Lin ; De Boer, Wiebe B. ; Charbon, Edoardo ; Nanver, Lis K. / A CMOS compatible Ge-on-Si APD operating in proportional and Geiger modes at infrared wavelengths. 2011 International Electron Devices Meeting, IEDM 2011. 2011.
@inproceedings{bd66ab0c69254ecab6da2799e2313edb,
title = "A CMOS compatible Ge-on-Si APD operating in proportional and Geiger modes at infrared wavelengths",
abstract = "A CMOS compatible Ge avalanche photodiode is fabricated on Si by using a selective chemical-vapor deposition (CVD) epitaxial growth technique. At a temperature of 700°C, single crystal islands of As-doped Ge are grown in windows to the Si with sizes up to hundreds of μm2, to a layer thickness of approximately 1 μm, This is followed by a pure Ga and then a pure B (PureGaB) deposition for the creation of an ultrashallow p +-region that can be metallized by Al. The resulting p +n diodes have exceptionally good I-V characteristics with ideality factors of ∼ 1.1 and reliably low saturation currents. The measurements show high sensitivity of the photodiodes to IR wavelengths above 1μm in avalanche and Geiger modes.",
author = "Amir Sammak and Mahdi Aminian and Lin Qi and {De Boer}, {Wiebe B.} and Edoardo Charbon and Nanver, {Lis K.}",
year = "2011",
month = "12",
day = "1",
doi = "10.1109/IEDM.2011.6131515",
language = "English",
isbn = "9781457705052",
booktitle = "2011 International Electron Devices Meeting, IEDM 2011",

}

Sammak, A, Aminian, M, Qi, L, De Boer, WB, Charbon, E & Nanver, LK 2011, A CMOS compatible Ge-on-Si APD operating in proportional and Geiger modes at infrared wavelengths. in 2011 International Electron Devices Meeting, IEDM 2011., 6131515, 2011 IEEE International Electron Devices Meeting, IEDM 2011, Washington, United States, 5/12/11. https://doi.org/10.1109/IEDM.2011.6131515

A CMOS compatible Ge-on-Si APD operating in proportional and Geiger modes at infrared wavelengths. / Sammak, Amir; Aminian, Mahdi; Qi, Lin; De Boer, Wiebe B.; Charbon, Edoardo; Nanver, Lis K.

2011 International Electron Devices Meeting, IEDM 2011. 2011. 6131515.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - A CMOS compatible Ge-on-Si APD operating in proportional and Geiger modes at infrared wavelengths

AU - Sammak, Amir

AU - Aminian, Mahdi

AU - Qi, Lin

AU - De Boer, Wiebe B.

AU - Charbon, Edoardo

AU - Nanver, Lis K.

PY - 2011/12/1

Y1 - 2011/12/1

N2 - A CMOS compatible Ge avalanche photodiode is fabricated on Si by using a selective chemical-vapor deposition (CVD) epitaxial growth technique. At a temperature of 700°C, single crystal islands of As-doped Ge are grown in windows to the Si with sizes up to hundreds of μm2, to a layer thickness of approximately 1 μm, This is followed by a pure Ga and then a pure B (PureGaB) deposition for the creation of an ultrashallow p +-region that can be metallized by Al. The resulting p +n diodes have exceptionally good I-V characteristics with ideality factors of ∼ 1.1 and reliably low saturation currents. The measurements show high sensitivity of the photodiodes to IR wavelengths above 1μm in avalanche and Geiger modes.

AB - A CMOS compatible Ge avalanche photodiode is fabricated on Si by using a selective chemical-vapor deposition (CVD) epitaxial growth technique. At a temperature of 700°C, single crystal islands of As-doped Ge are grown in windows to the Si with sizes up to hundreds of μm2, to a layer thickness of approximately 1 μm, This is followed by a pure Ga and then a pure B (PureGaB) deposition for the creation of an ultrashallow p +-region that can be metallized by Al. The resulting p +n diodes have exceptionally good I-V characteristics with ideality factors of ∼ 1.1 and reliably low saturation currents. The measurements show high sensitivity of the photodiodes to IR wavelengths above 1μm in avalanche and Geiger modes.

UR - http://www.scopus.com/inward/record.url?scp=84857008859&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2011.6131515

DO - 10.1109/IEDM.2011.6131515

M3 - Conference contribution

SN - 9781457705052

BT - 2011 International Electron Devices Meeting, IEDM 2011

ER -

Sammak A, Aminian M, Qi L, De Boer WB, Charbon E, Nanver LK. A CMOS compatible Ge-on-Si APD operating in proportional and Geiger modes at infrared wavelengths. In 2011 International Electron Devices Meeting, IEDM 2011. 2011. 6131515 https://doi.org/10.1109/IEDM.2011.6131515