A CMOS compatible Ge-on-Si APD operating in proportional and Geiger modes at infrared wavelengths

Amir Sammak*, Mahdi Aminian, Lin Qi, Wiebe B. De Boer, Edoardo Charbon, Lis K. Nanver

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

13 Citations (Scopus)

Abstract

A CMOS compatible Ge avalanche photodiode is fabricated on Si by using a selective chemical-vapor deposition (CVD) epitaxial growth technique. At a temperature of 700°C, single crystal islands of As-doped Ge are grown in windows to the Si with sizes up to hundreds of μm2, to a layer thickness of approximately 1 μm, This is followed by a pure Ga and then a pure B (PureGaB) deposition for the creation of an ultrashallow p +-region that can be metallized by Al. The resulting p +n diodes have exceptionally good I-V characteristics with ideality factors of ∼ 1.1 and reliably low saturation currents. The measurements show high sensitivity of the photodiodes to IR wavelengths above 1μm in avalanche and Geiger modes.

Original languageEnglish
Title of host publication2011 International Electron Devices Meeting, IEDM 2011
DOIs
Publication statusPublished - 1 Dec 2011
Externally publishedYes
Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, United States
Duration: 5 Dec 20117 Dec 2011

Conference

Conference2011 IEEE International Electron Devices Meeting, IEDM 2011
Abbreviated titleIEDM 2011
CountryUnited States
CityWashington
Period5/12/117/12/11

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