A CMOS compatible Microbulk Micromegas-like detector using silicon oxide as spacer material

V.M. Blanco Carballo, M. Fransen, H. van der Graaf, J. Lu, Jurriaan Schmitz

Research output: Contribution to journalArticleAcademicpeer-review

4 Citations (Scopus)

Abstract

We present a new Micro Pattern Gaseous Detector (MPGD) fabricated with non polymeric materials. The device structure is similar to a Microbulk Microme gas design, consisting of a punctured metalgrid supported by a continuous perforate dinsulating structure. In this detector, the supporting structure is made out of silicon oxide. Devices were tested in He/iC4H10 (80/20) and Ar/iC4H10 (80/20)gas mixtures under 55Fe irradiation. Gas gain of 20,000 and energy resolution below 13%FWHM were achieved. The CMOS compatibility of the fabrication process has been studied in Timepix chips as well as individual 0.13-mm technology CMOS transistors. Complete detectors have been fabricated on top of Timepix chips. In an Ar/iC4H10 (80/20) gas mixture 55Fe decay events were recorded operating the Timepix chip in 2D readout mode.
Original languageUndefined
Pages (from-to)118-122
Number of pages5
JournalNuclear instruments & methods in physics research. Section A : Accelerators, spectrometers, detectors and associated equipment
Volume629
Issue number1
DOIs
Publication statusPublished - 1 Dec 2010

Keywords

  • TimePix
  • EWI-19577
  • SC-RID: Radiation Imaging detectors
  • METIS-277532
  • IR-77320
  • CMOS post-processing
  • Radiation detectors
  • MPGD
  • Microsystems
  • GEMGrid
  • Microbulk
  • MICROMEGAS
  • Silicon oxide
  • Above IC

Cite this

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title = "A CMOS compatible Microbulk Micromegas-like detector using silicon oxide as spacer material",
abstract = "We present a new Micro Pattern Gaseous Detector (MPGD) fabricated with non polymeric materials. The device structure is similar to a Microbulk Microme gas design, consisting of a punctured metalgrid supported by a continuous perforate dinsulating structure. In this detector, the supporting structure is made out of silicon oxide. Devices were tested in He/iC4H10 (80/20) and Ar/iC4H10 (80/20)gas mixtures under 55Fe irradiation. Gas gain of 20,000 and energy resolution below 13{\%}FWHM were achieved. The CMOS compatibility of the fabrication process has been studied in Timepix chips as well as individual 0.13-mm technology CMOS transistors. Complete detectors have been fabricated on top of Timepix chips. In an Ar/iC4H10 (80/20) gas mixture 55Fe decay events were recorded operating the Timepix chip in 2D readout mode.",
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author = "{Blanco Carballo}, V.M. and M. Fransen and {van der Graaf}, H. and J. Lu and Jurriaan Schmitz",
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A CMOS compatible Microbulk Micromegas-like detector using silicon oxide as spacer material. / Blanco Carballo, V.M.; Fransen, M.; van der Graaf, H.; Lu, J.; Schmitz, Jurriaan.

In: Nuclear instruments & methods in physics research. Section A : Accelerators, spectrometers, detectors and associated equipment, Vol. 629, No. 1, 01.12.2010, p. 118-122.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - A CMOS compatible Microbulk Micromegas-like detector using silicon oxide as spacer material

AU - Blanco Carballo, V.M.

AU - Fransen, M.

AU - van der Graaf, H.

AU - Lu, J.

AU - Schmitz, Jurriaan

N1 - 10.1016/j.nima.2010.10.143

PY - 2010/12/1

Y1 - 2010/12/1

N2 - We present a new Micro Pattern Gaseous Detector (MPGD) fabricated with non polymeric materials. The device structure is similar to a Microbulk Microme gas design, consisting of a punctured metalgrid supported by a continuous perforate dinsulating structure. In this detector, the supporting structure is made out of silicon oxide. Devices were tested in He/iC4H10 (80/20) and Ar/iC4H10 (80/20)gas mixtures under 55Fe irradiation. Gas gain of 20,000 and energy resolution below 13%FWHM were achieved. The CMOS compatibility of the fabrication process has been studied in Timepix chips as well as individual 0.13-mm technology CMOS transistors. Complete detectors have been fabricated on top of Timepix chips. In an Ar/iC4H10 (80/20) gas mixture 55Fe decay events were recorded operating the Timepix chip in 2D readout mode.

AB - We present a new Micro Pattern Gaseous Detector (MPGD) fabricated with non polymeric materials. The device structure is similar to a Microbulk Microme gas design, consisting of a punctured metalgrid supported by a continuous perforate dinsulating structure. In this detector, the supporting structure is made out of silicon oxide. Devices were tested in He/iC4H10 (80/20) and Ar/iC4H10 (80/20)gas mixtures under 55Fe irradiation. Gas gain of 20,000 and energy resolution below 13%FWHM were achieved. The CMOS compatibility of the fabrication process has been studied in Timepix chips as well as individual 0.13-mm technology CMOS transistors. Complete detectors have been fabricated on top of Timepix chips. In an Ar/iC4H10 (80/20) gas mixture 55Fe decay events were recorded operating the Timepix chip in 2D readout mode.

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KW - MPGD

KW - Microsystems

KW - GEMGrid

KW - Microbulk

KW - MICROMEGAS

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KW - Above IC

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