A CMOS compatible Microbulk Micromegas-like detector using silicon oxide as spacer material

V.M. Blanco Carballo, M. Fransen, H. van der Graaf, J. Lu, Jurriaan Schmitz

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    4 Citations (Scopus)

    Abstract

    We present a new Micro Pattern Gaseous Detector (MPGD) fabricated with non polymeric materials. The device structure is similar to a Microbulk Microme gas design, consisting of a punctured metalgrid supported by a continuous perforate dinsulating structure. In this detector, the supporting structure is made out of silicon oxide. Devices were tested in He/iC4H10 (80/20) and Ar/iC4H10 (80/20)gas mixtures under 55Fe irradiation. Gas gain of 20,000 and energy resolution below 13%FWHM were achieved. The CMOS compatibility of the fabrication process has been studied in Timepix chips as well as individual 0.13-mm technology CMOS transistors. Complete detectors have been fabricated on top of Timepix chips. In an Ar/iC4H10 (80/20) gas mixture 55Fe decay events were recorded operating the Timepix chip in 2D readout mode.
    Original languageUndefined
    Pages (from-to)118-122
    Number of pages5
    JournalNuclear instruments & methods in physics research. Section A : Accelerators, spectrometers, detectors and associated equipment
    Volume629
    Issue number1
    DOIs
    Publication statusPublished - 1 Dec 2010

    Keywords

    • TimePix
    • EWI-19577
    • SC-RID: Radiation Imaging detectors
    • METIS-277532
    • IR-77320
    • CMOS post-processing
    • Radiation detectors
    • MPGD
    • Microsystems
    • GEMGrid
    • Microbulk
    • MICROMEGAS
    • Silicon oxide
    • Above IC

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