A Comparative Study of Low-Temperature III-V Nitrides ALD in Thermal and Radical-Enhanced Modes

Sourish Banerjee, Alexey Y. Kovalgin

Research output: Contribution to conferencePaperAcademicpeer-review

1 Citation (Scopus)

Abstract

This paper explores the possibility of Atomic Layer Deposition (ALD) of polycrystalline GaN thin films in a purely thermal mode from trimethylgallium (TMG) and ammonia (NH3) precursors, at a temperature as low as 400 oC, without any additional activation, e.g., by a plasma. In order to achieve this, the so-called adduct chemical pathway, prevalent in GaN Metal Organic Chemical Vapor Deposition (MOCVD), was realized within an ALD scheme. Based on the known existence of the TMG:NH3 adduct in gasphase, here we hypothesize the occurrence of an analogous TMG:NH3 surface adduct, and thereby propose a model for the growth of GaN via surface reactions occurring in a self-limiting
manner. We show that such surface reactions are possible even at 400 oC, and result in polycrystalline GaN films with a reasonable growth rate of 0.045 nm/cycle. The proposed purely thermal low temperature deposition approach may increase the versatility of poly-GaN films in several new applications.
Original languageEnglish
Pages21-29
DOIs
Publication statusPublished - 30 Sep 2018
EventAiMES 2018: 2018 ECS and SMEQ Joint International Meeting - Cancun, Mexico
Duration: 30 Sep 20184 Oct 2018
https://www.electrochem.org/aimes2018

Conference

ConferenceAiMES 2018
CountryMexico
CityCancun
Period30/09/184/10/18
Internet address

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atomic layer epitaxy
adducts
nitrides
surface reactions
versatility
metalorganic chemical vapor deposition
ammonia
activation
occurrences
cycles
thin films
temperature

Cite this

@conference{8062f20a0abc43b0b0894701e3b4067c,
title = "A Comparative Study of Low-Temperature III-V Nitrides ALD in Thermal and Radical-Enhanced Modes",
abstract = "This paper explores the possibility of Atomic Layer Deposition (ALD) of polycrystalline GaN thin films in a purely thermal mode from trimethylgallium (TMG) and ammonia (NH3) precursors, at a temperature as low as 400 oC, without any additional activation, e.g., by a plasma. In order to achieve this, the so-called adduct chemical pathway, prevalent in GaN Metal Organic Chemical Vapor Deposition (MOCVD), was realized within an ALD scheme. Based on the known existence of the TMG:NH3 adduct in gasphase, here we hypothesize the occurrence of an analogous TMG:NH3 surface adduct, and thereby propose a model for the growth of GaN via surface reactions occurring in a self-limitingmanner. We show that such surface reactions are possible even at 400 oC, and result in polycrystalline GaN films with a reasonable growth rate of 0.045 nm/cycle. The proposed purely thermal low temperature deposition approach may increase the versatility of poly-GaN films in several new applications.",
author = "Sourish Banerjee and Kovalgin, {Alexey Y.}",
year = "2018",
month = "9",
day = "30",
doi = "10.1149/08606.0021ecst",
language = "English",
pages = "21--29",
note = "AiMES 2018 : 2018 ECS and SMEQ Joint International Meeting ; Conference date: 30-09-2018 Through 04-10-2018",
url = "https://www.electrochem.org/aimes2018",

}

Banerjee, S & Kovalgin, AY 2018, 'A Comparative Study of Low-Temperature III-V Nitrides ALD in Thermal and Radical-Enhanced Modes' Paper presented at AiMES 2018, Cancun, Mexico, 30/09/18 - 4/10/18, pp. 21-29. https://doi.org/10.1149/08606.0021ecst

A Comparative Study of Low-Temperature III-V Nitrides ALD in Thermal and Radical-Enhanced Modes. / Banerjee, Sourish ; Kovalgin, Alexey Y.

2018. 21-29 Paper presented at AiMES 2018, Cancun, Mexico.

Research output: Contribution to conferencePaperAcademicpeer-review

TY - CONF

T1 - A Comparative Study of Low-Temperature III-V Nitrides ALD in Thermal and Radical-Enhanced Modes

AU - Banerjee, Sourish

AU - Kovalgin, Alexey Y.

PY - 2018/9/30

Y1 - 2018/9/30

N2 - This paper explores the possibility of Atomic Layer Deposition (ALD) of polycrystalline GaN thin films in a purely thermal mode from trimethylgallium (TMG) and ammonia (NH3) precursors, at a temperature as low as 400 oC, without any additional activation, e.g., by a plasma. In order to achieve this, the so-called adduct chemical pathway, prevalent in GaN Metal Organic Chemical Vapor Deposition (MOCVD), was realized within an ALD scheme. Based on the known existence of the TMG:NH3 adduct in gasphase, here we hypothesize the occurrence of an analogous TMG:NH3 surface adduct, and thereby propose a model for the growth of GaN via surface reactions occurring in a self-limitingmanner. We show that such surface reactions are possible even at 400 oC, and result in polycrystalline GaN films with a reasonable growth rate of 0.045 nm/cycle. The proposed purely thermal low temperature deposition approach may increase the versatility of poly-GaN films in several new applications.

AB - This paper explores the possibility of Atomic Layer Deposition (ALD) of polycrystalline GaN thin films in a purely thermal mode from trimethylgallium (TMG) and ammonia (NH3) precursors, at a temperature as low as 400 oC, without any additional activation, e.g., by a plasma. In order to achieve this, the so-called adduct chemical pathway, prevalent in GaN Metal Organic Chemical Vapor Deposition (MOCVD), was realized within an ALD scheme. Based on the known existence of the TMG:NH3 adduct in gasphase, here we hypothesize the occurrence of an analogous TMG:NH3 surface adduct, and thereby propose a model for the growth of GaN via surface reactions occurring in a self-limitingmanner. We show that such surface reactions are possible even at 400 oC, and result in polycrystalline GaN films with a reasonable growth rate of 0.045 nm/cycle. The proposed purely thermal low temperature deposition approach may increase the versatility of poly-GaN films in several new applications.

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