A Comparative Study of Low-Temperature III-V Nitrides ALD in Thermal and Radical-Enhanced Modes

Sourish Banerjee, Alexey Y. Kovalgin

    Research output: Contribution to conferencePaper

    2 Citations (Scopus)

    Abstract

    This paper explores the possibility of Atomic Layer Deposition (ALD) of polycrystalline GaN thin films in a purely thermal mode from trimethylgallium (TMG) and ammonia (NH3) precursors, at a temperature as low as 400 oC, without any additional activation, e.g., by a plasma. In order to achieve this, the so-called adduct chemical pathway, prevalent in GaN Metal Organic Chemical Vapor Deposition (MOCVD), was realized within an ALD scheme. Based on the known existence of the TMG:NH3 adduct in gasphase, here we hypothesize the occurrence of an analogous TMG:NH3 surface adduct, and thereby propose a model for the growth of GaN via surface reactions occurring in a self-limiting
    manner. We show that such surface reactions are possible even at 400 oC, and result in polycrystalline GaN films with a reasonable growth rate of 0.045 nm/cycle. The proposed purely thermal low temperature deposition approach may increase the versatility of poly-GaN films in several new applications.
    Original languageEnglish
    Pages21-29
    DOIs
    Publication statusPublished - 30 Sep 2018
    EventAiMES 2018: 2018 ECS and SMEQ Joint International Meeting - Cancun, Mexico
    Duration: 30 Sep 20184 Oct 2018
    https://www.electrochem.org/aimes2018

    Conference

    ConferenceAiMES 2018
    CountryMexico
    CityCancun
    Period30/09/184/10/18
    Internet address

    Fingerprint

    atomic layer epitaxy
    adducts
    nitrides
    surface reactions
    versatility
    metalorganic chemical vapor deposition
    ammonia
    activation
    occurrences
    cycles
    thin films
    temperature

    Cite this

    @conference{8062f20a0abc43b0b0894701e3b4067c,
    title = "A Comparative Study of Low-Temperature III-V Nitrides ALD in Thermal and Radical-Enhanced Modes",
    abstract = "This paper explores the possibility of Atomic Layer Deposition (ALD) of polycrystalline GaN thin films in a purely thermal mode from trimethylgallium (TMG) and ammonia (NH3) precursors, at a temperature as low as 400 oC, without any additional activation, e.g., by a plasma. In order to achieve this, the so-called adduct chemical pathway, prevalent in GaN Metal Organic Chemical Vapor Deposition (MOCVD), was realized within an ALD scheme. Based on the known existence of the TMG:NH3 adduct in gasphase, here we hypothesize the occurrence of an analogous TMG:NH3 surface adduct, and thereby propose a model for the growth of GaN via surface reactions occurring in a self-limitingmanner. We show that such surface reactions are possible even at 400 oC, and result in polycrystalline GaN films with a reasonable growth rate of 0.045 nm/cycle. The proposed purely thermal low temperature deposition approach may increase the versatility of poly-GaN films in several new applications.",
    author = "Sourish Banerjee and Kovalgin, {Alexey Y.}",
    year = "2018",
    month = "9",
    day = "30",
    doi = "10.1149/08606.0021ecst",
    language = "English",
    pages = "21--29",
    note = "AiMES 2018 : 2018 ECS and SMEQ Joint International Meeting ; Conference date: 30-09-2018 Through 04-10-2018",
    url = "https://www.electrochem.org/aimes2018",

    }

    Banerjee, S & Kovalgin, AY 2018, 'A Comparative Study of Low-Temperature III-V Nitrides ALD in Thermal and Radical-Enhanced Modes' Paper presented at AiMES 2018, Cancun, Mexico, 30/09/18 - 4/10/18, pp. 21-29. https://doi.org/10.1149/08606.0021ecst

    A Comparative Study of Low-Temperature III-V Nitrides ALD in Thermal and Radical-Enhanced Modes. / Banerjee, Sourish ; Kovalgin, Alexey Y.

    2018. 21-29 Paper presented at AiMES 2018, Cancun, Mexico.

    Research output: Contribution to conferencePaper

    TY - CONF

    T1 - A Comparative Study of Low-Temperature III-V Nitrides ALD in Thermal and Radical-Enhanced Modes

    AU - Banerjee, Sourish

    AU - Kovalgin, Alexey Y.

    PY - 2018/9/30

    Y1 - 2018/9/30

    N2 - This paper explores the possibility of Atomic Layer Deposition (ALD) of polycrystalline GaN thin films in a purely thermal mode from trimethylgallium (TMG) and ammonia (NH3) precursors, at a temperature as low as 400 oC, without any additional activation, e.g., by a plasma. In order to achieve this, the so-called adduct chemical pathway, prevalent in GaN Metal Organic Chemical Vapor Deposition (MOCVD), was realized within an ALD scheme. Based on the known existence of the TMG:NH3 adduct in gasphase, here we hypothesize the occurrence of an analogous TMG:NH3 surface adduct, and thereby propose a model for the growth of GaN via surface reactions occurring in a self-limitingmanner. We show that such surface reactions are possible even at 400 oC, and result in polycrystalline GaN films with a reasonable growth rate of 0.045 nm/cycle. The proposed purely thermal low temperature deposition approach may increase the versatility of poly-GaN films in several new applications.

    AB - This paper explores the possibility of Atomic Layer Deposition (ALD) of polycrystalline GaN thin films in a purely thermal mode from trimethylgallium (TMG) and ammonia (NH3) precursors, at a temperature as low as 400 oC, without any additional activation, e.g., by a plasma. In order to achieve this, the so-called adduct chemical pathway, prevalent in GaN Metal Organic Chemical Vapor Deposition (MOCVD), was realized within an ALD scheme. Based on the known existence of the TMG:NH3 adduct in gasphase, here we hypothesize the occurrence of an analogous TMG:NH3 surface adduct, and thereby propose a model for the growth of GaN via surface reactions occurring in a self-limitingmanner. We show that such surface reactions are possible even at 400 oC, and result in polycrystalline GaN films with a reasonable growth rate of 0.045 nm/cycle. The proposed purely thermal low temperature deposition approach may increase the versatility of poly-GaN films in several new applications.

    U2 - 10.1149/08606.0021ecst

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