A Difference in Using Atomic Layer Deposition or Physical Vapour Deposition TiN as Electrode Material in Metal-Insulator-Metal and Metal-Insulator-Silicon Capacitors

    Research output: Contribution to journalArticleAcademicpeer-review

    4 Citations (Scopus)
    1 Downloads (Pure)

    Abstract

    In this work, metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) capacitors are studied using titanium nitride (TiN) as the electrode material. The effect of structural defects on the electrical properties on MIS and MIM capacitors is studied for various electrode configurations. In the MIM capacitors the bottom electrode is a patterned 100 nm TiN layer (called BE type 1), deposited via sputtering, while MIS capacitors have a flat bottom electrode (called BE type 2–silicon substrate). A high quality 50–100 nm thick SiO2 layer, made by inductively-coupled plasma CVD at 150 _C, is deposited as a dielectric on top of both types of bottom electrodes. BE type 1 (MIM) capacitors have a varying from low to high concentration of structural defects in the SiO2 layer. BE type 2 (MIS) capacitors have a low concentration of structural defects and are used as a reference. Two sets of each capacitor design are fabricated with the TiN top electrode deposited either via physical vapour deposition (PVD, i.e., sputtering) or atomic layer deposition (ALD). The MIM and MIS capacitors are electrically characterized in terms of the leakage current at an electric field of 0.1 MV/cm (Ileak_ and for different structural defect concentrations. It is shown that the structural defects only show up in the electrical characteristics of BE type 1 capacitors with an ALD TiN-based top electrode. This is due to the excellent step coverage of the ALD process. This work clearly demonstrates the sensitivity to process-induced structural defects, when ALD is used as a step in process integration of conductors on insulation materials.
    Original languageUndefined
    Pages (from-to)8368-8373
    Number of pages6
    JournalJournal of nanoscience and nanotechnology
    Volume11
    Issue number9
    DOIs
    Publication statusPublished - 1 Sep 2011

    Keywords

    • EWI-20960
    • Atomic Layer Deposition
    • Dielectric Breakdown
    • Metal-Insulator-Metal Capacitor
    • Metal-Insulator-Silicon Capacitor
    • IR-78809
    • Step Coverage
    • Physical Vapour Deposition
    • TiN
    • Titanium Nitride
    • METIS-281626
    • Leakage

    Cite this

    @article{84904181a8e8446d8b04e1f4e732ceb5,
    title = "A Difference in Using Atomic Layer Deposition or Physical Vapour Deposition TiN as Electrode Material in Metal-Insulator-Metal and Metal-Insulator-Silicon Capacitors",
    abstract = "In this work, metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) capacitors are studied using titanium nitride (TiN) as the electrode material. The effect of structural defects on the electrical properties on MIS and MIM capacitors is studied for various electrode configurations. In the MIM capacitors the bottom electrode is a patterned 100 nm TiN layer (called BE type 1), deposited via sputtering, while MIS capacitors have a flat bottom electrode (called BE type 2–silicon substrate). A high quality 50–100 nm thick SiO2 layer, made by inductively-coupled plasma CVD at 150 _C, is deposited as a dielectric on top of both types of bottom electrodes. BE type 1 (MIM) capacitors have a varying from low to high concentration of structural defects in the SiO2 layer. BE type 2 (MIS) capacitors have a low concentration of structural defects and are used as a reference. Two sets of each capacitor design are fabricated with the TiN top electrode deposited either via physical vapour deposition (PVD, i.e., sputtering) or atomic layer deposition (ALD). The MIM and MIS capacitors are electrically characterized in terms of the leakage current at an electric field of 0.1 MV/cm (Ileak_ and for different structural defect concentrations. It is shown that the structural defects only show up in the electrical characteristics of BE type 1 capacitors with an ALD TiN-based top electrode. This is due to the excellent step coverage of the ALD process. This work clearly demonstrates the sensitivity to process-induced structural defects, when ALD is used as a step in process integration of conductors on insulation materials.",
    keywords = "EWI-20960, Atomic Layer Deposition, Dielectric Breakdown, Metal-Insulator-Metal Capacitor, Metal-Insulator-Silicon Capacitor, IR-78809, Step Coverage, Physical Vapour Deposition, TiN, Titanium Nitride, METIS-281626, Leakage",
    author = "A.W. Groenland and Wolters, {Robertus A.M.} and Kovalgin, {Alexeij Y.} and Jurriaan Schmitz",
    note = "eemcs-eprint-20960",
    year = "2011",
    month = "9",
    day = "1",
    doi = "10.1166/jnn.2011.5036",
    language = "Undefined",
    volume = "11",
    pages = "8368--8373",
    journal = "Journal of nanoscience and nanotechnology",
    issn = "1533-4880",
    publisher = "American Scientific Publishers",
    number = "9",

    }

    TY - JOUR

    T1 - A Difference in Using Atomic Layer Deposition or Physical Vapour Deposition TiN as Electrode Material in Metal-Insulator-Metal and Metal-Insulator-Silicon Capacitors

    AU - Groenland, A.W.

    AU - Wolters, Robertus A.M.

    AU - Kovalgin, Alexeij Y.

    AU - Schmitz, Jurriaan

    N1 - eemcs-eprint-20960

    PY - 2011/9/1

    Y1 - 2011/9/1

    N2 - In this work, metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) capacitors are studied using titanium nitride (TiN) as the electrode material. The effect of structural defects on the electrical properties on MIS and MIM capacitors is studied for various electrode configurations. In the MIM capacitors the bottom electrode is a patterned 100 nm TiN layer (called BE type 1), deposited via sputtering, while MIS capacitors have a flat bottom electrode (called BE type 2–silicon substrate). A high quality 50–100 nm thick SiO2 layer, made by inductively-coupled plasma CVD at 150 _C, is deposited as a dielectric on top of both types of bottom electrodes. BE type 1 (MIM) capacitors have a varying from low to high concentration of structural defects in the SiO2 layer. BE type 2 (MIS) capacitors have a low concentration of structural defects and are used as a reference. Two sets of each capacitor design are fabricated with the TiN top electrode deposited either via physical vapour deposition (PVD, i.e., sputtering) or atomic layer deposition (ALD). The MIM and MIS capacitors are electrically characterized in terms of the leakage current at an electric field of 0.1 MV/cm (Ileak_ and for different structural defect concentrations. It is shown that the structural defects only show up in the electrical characteristics of BE type 1 capacitors with an ALD TiN-based top electrode. This is due to the excellent step coverage of the ALD process. This work clearly demonstrates the sensitivity to process-induced structural defects, when ALD is used as a step in process integration of conductors on insulation materials.

    AB - In this work, metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) capacitors are studied using titanium nitride (TiN) as the electrode material. The effect of structural defects on the electrical properties on MIS and MIM capacitors is studied for various electrode configurations. In the MIM capacitors the bottom electrode is a patterned 100 nm TiN layer (called BE type 1), deposited via sputtering, while MIS capacitors have a flat bottom electrode (called BE type 2–silicon substrate). A high quality 50–100 nm thick SiO2 layer, made by inductively-coupled plasma CVD at 150 _C, is deposited as a dielectric on top of both types of bottom electrodes. BE type 1 (MIM) capacitors have a varying from low to high concentration of structural defects in the SiO2 layer. BE type 2 (MIS) capacitors have a low concentration of structural defects and are used as a reference. Two sets of each capacitor design are fabricated with the TiN top electrode deposited either via physical vapour deposition (PVD, i.e., sputtering) or atomic layer deposition (ALD). The MIM and MIS capacitors are electrically characterized in terms of the leakage current at an electric field of 0.1 MV/cm (Ileak_ and for different structural defect concentrations. It is shown that the structural defects only show up in the electrical characteristics of BE type 1 capacitors with an ALD TiN-based top electrode. This is due to the excellent step coverage of the ALD process. This work clearly demonstrates the sensitivity to process-induced structural defects, when ALD is used as a step in process integration of conductors on insulation materials.

    KW - EWI-20960

    KW - Atomic Layer Deposition

    KW - Dielectric Breakdown

    KW - Metal-Insulator-Metal Capacitor

    KW - Metal-Insulator-Silicon Capacitor

    KW - IR-78809

    KW - Step Coverage

    KW - Physical Vapour Deposition

    KW - TiN

    KW - Titanium Nitride

    KW - METIS-281626

    KW - Leakage

    U2 - 10.1166/jnn.2011.5036

    DO - 10.1166/jnn.2011.5036

    M3 - Article

    VL - 11

    SP - 8368

    EP - 8373

    JO - Journal of nanoscience and nanotechnology

    JF - Journal of nanoscience and nanotechnology

    SN - 1533-4880

    IS - 9

    ER -