A drift free nernstian iridium oxide PH sensor

J. Hendrikse, Wouter Olthuis, Piet Bergveld

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    6 Citations (Scopus)
    105 Downloads (Pure)

    Abstract

    A novel way of eliminating drift problems in metal oxide pH sensors is presented. The method employs a FET-structure under the electrode that uses the metal oxide as a gate contact. In addition to the enhanced drift properties, the new sensor has an almost ideal nernstian response. First a theoretical explanation is given, which is then confirmed by measurements
    Original languageUndefined
    Title of host publicationTransducers '97
    Place of PublicationChicago, USA
    PublisherIEEE
    Pages1367-1370
    ISBN (Print)0-7803-3829-4
    DOIs
    Publication statusPublished - 19 Jun 1997
    Event1997 International Conference on Solid-State Sensors and Actuators, TRANSDUCERS 1997 - Chicago, United States
    Duration: 16 Jun 199719 Jun 1997

    Publication series

    Name
    PublisherIEEE
    Volume2

    Conference

    Conference1997 International Conference on Solid-State Sensors and Actuators, TRANSDUCERS 1997
    Abbreviated titleTRANSDUCERS 97
    CountryUnited States
    CityChicago
    Period16/06/9719/06/97

    Keywords

    • IR-16879
    • METIS-113764

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