A drift free nernstian iridium oxide PH sensor

J. Hendrikse; Wouter Olthuis; Piet Bergveld

doi:10.1109/SENSOR.1997.635491

A drift free nernstian iridium oxide PH sensor

J. Hendrikse, Wouter Olthuis, Piet Bergveld

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

8 Citations (Scopus)

218 Downloads (Pure)

Abstract

A novel way of eliminating drift problems in metal oxide pH sensors is presented. The method employs a FET-structure under the electrode that uses the metal oxide as a gate contact. In addition to the enhanced drift properties, the new sensor has an almost ideal nernstian response. First a theoretical explanation is given, which is then confirmed by measurements

Original language	Undefined
Title of host publication	Transducers '97
Place of Publication	Chicago, USA
Publisher	IEEE
Pages	1367-1370
ISBN (Print)	0-7803-3829-4
DOIs	https://doi.org/10.1109/SENSOR.1997.635491
Publication status	Published - 19 Jun 1997
Event	1997 International Conference on Solid-State Sensors and Actuators, TRANSDUCERS 1997 - Chicago, United States Duration: 16 Jun 1997 → 19 Jun 1997

Publication series

Name
Publisher	IEEE
Volume	2

Conference

Conference	1997 International Conference on Solid-State Sensors and Actuators, TRANSDUCERS 1997
Abbreviated title	TRANSDUCERS 97
Country/Territory	United States
City	Chicago
Period	16/06/97 → 19/06/97

Keywords

IR-16879
METIS-113764

Access to Document

10.1109/SENSOR.1997.635491

00635491

Cite this

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title = "A drift free nernstian iridium oxide PH sensor",

abstract = "A novel way of eliminating drift problems in metal oxide pH sensors is presented. The method employs a FET-structure under the electrode that uses the metal oxide as a gate contact. In addition to the enhanced drift properties, the new sensor has an almost ideal nernstian response. First a theoretical explanation is given, which is then confirmed by measurements",

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T1 - A drift free nernstian iridium oxide PH sensor

AU - Hendrikse, J.

AU - Olthuis, Wouter

AU - Bergveld, Piet

PY - 1997/6/19

Y1 - 1997/6/19

N2 - A novel way of eliminating drift problems in metal oxide pH sensors is presented. The method employs a FET-structure under the electrode that uses the metal oxide as a gate contact. In addition to the enhanced drift properties, the new sensor has an almost ideal nernstian response. First a theoretical explanation is given, which is then confirmed by measurements

AB - A novel way of eliminating drift problems in metal oxide pH sensors is presented. The method employs a FET-structure under the electrode that uses the metal oxide as a gate contact. In addition to the enhanced drift properties, the new sensor has an almost ideal nernstian response. First a theoretical explanation is given, which is then confirmed by measurements

KW - IR-16879

KW - METIS-113764

U2 - 10.1109/SENSOR.1997.635491

DO - 10.1109/SENSOR.1997.635491

M3 - Conference contribution

SN - 0-7803-3829-4

SP - 1367

EP - 1370

BT - Transducers '97

PB - IEEE

CY - Chicago, USA

T2 - 1997 International Conference on Solid-State Sensors and Actuators, TRANSDUCERS 1997

Y2 - 16 June 1997 through 19 June 1997

ER -