A fabrication guide for planar silicon quantum dot heterostructures

P.C. Spruijtenburg, Sergei Amitonov, Wilfred Gerard van der Wiel, Floris Arnoud Zwanenburg (Corresponding Author)

    Research output: Contribution to journalArticleProfessional

    14 Citations (Scopus)
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    We describe important considerations to create top-down fabricated planar quantum dots in silicon, often not discussed in detail in literature. The subtle interplay between intrinsic material properties, interfaces and fabrication processes plays a crucial role in the formation of electrostatically defined quantum dots. Processes such as oxidation, physical vapor deposition and atomic-layer deposition must be tailored in order to prevent unwanted side effects such as defects, disorder and dewetting. In two directly related manuscripts written in parallel we use techniques described in this work to create depletion-mode quantum dots in intrinsic silicon, and low-disorder silicon quantum dots defined with palladium gates. While we discuss three different planar gate structures, the general principles also apply to 0D and 1D systems, such as self-assembled islands and nanowires.

    Original languageEnglish
    Article number143001
    Number of pages14
    Issue number14
    Publication statusPublished - 16 Feb 2018


    • silicon quantum electronics
    • nanofabrication
    • quantum dots


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