A flexoelectric microelectromechanical system on silicon

U.K. Bhaskar, N. Banerjee, A. Abdollahi, Zhe Wang, D.G. Schlom, Augustinus J.H.M. Rijnders, G. Catalan

Research output: Contribution to journalArticleAcademicpeer-review

109 Citations (Scopus)
246 Downloads (Pure)

Abstract

Flexoelectricity allows a dielectric material to polarize in response to a mechanical bending moment1 and, conversely, to bend in response to an electric field2. Compared with piezoelectricity, flexoelectricity is a weak effect of little practical significance in bulk materials. However, the roles can be reversed at the nanoscale3. Here, we demonstrate that flexoelectricity is a viable route to lead-free microelectromechanical and nanoelectromechanical systems. Specifically, we have fabricated a silicon-compatible thin-film cantilever actuator with a single flexoelectrically active layer of strontium titanate with a figure of merit (curvature divided by electric field) of 3.33 MV−1, comparable to that of state-of-the-art piezoelectric bimorph cantilevers.
Original languageEnglish
Pages (from-to)263-266
Number of pages5
JournalNature nanotechnology
Volume11
DOIs
Publication statusPublished - 16 Nov 2016

Keywords

  • METIS-312972
  • IR-98100

Fingerprint Dive into the research topics of 'A flexoelectric microelectromechanical system on silicon'. Together they form a unique fingerprint.

  • Cite this

    Bhaskar, U. K., Banerjee, N., Abdollahi, A., Wang, Z., Schlom, D. G., Rijnders, A. J. H. M., & Catalan, G. (2016). A flexoelectric microelectromechanical system on silicon. Nature nanotechnology, 11, 263-266. https://doi.org/10.1038/NNANO.2015.260