A flexoelectric microelectromechanical system on silicon

U.K. Bhaskar, N. Banerjee, A. Abdollahi, Zhe Wang, D.G. Schlom, Augustinus J.H.M. Rijnders, G. Catalan

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171 Citations (Scopus)
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Flexoelectricity allows a dielectric material to polarize in response to a mechanical bending moment1 and, conversely, to bend in response to an electric field2. Compared with piezoelectricity, flexoelectricity is a weak effect of little practical significance in bulk materials. However, the roles can be reversed at the nanoscale3. Here, we demonstrate that flexoelectricity is a viable route to lead-free microelectromechanical and nanoelectromechanical systems. Specifically, we have fabricated a silicon-compatible thin-film cantilever actuator with a single flexoelectrically active layer of strontium titanate with a figure of merit (curvature divided by electric field) of 3.33 MV−1, comparable to that of state-of-the-art piezoelectric bimorph cantilevers.
Original languageEnglish
Pages (from-to)263-266
Number of pages5
JournalNature nanotechnology
Publication statusPublished - 16 Nov 2016


  • METIS-312972
  • IR-98100


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