A forward-body-bias tuned 450MHz Gm-C 3rd-order low-pass filter in 28nm UTBB FD-SOI with >1dBVp IIP3 over a 0.7-to-1V supply

Joeri Boris Lechevallier; R.E. Struiksma; Hani Sherry; Andreia Cathelin; Eric A.M. Klumperink; Bram Nauta

doi:10.1109/ISSCC.2015.7062943

A forward-body-bias tuned 450MHz Gm-C 3rd-order low-pass filter in 28nm UTBB FD-SOI with >1dBVp IIP3 over a 0.7-to-1V supply

Joeri Boris Lechevallier, R.E. Struiksma, Hani Sherry, Andreia Cathelin, Eric A.M. Klumperink, Bram Nauta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

21 Citations (Scopus)

239 Downloads (Pure)

Abstract

Due to the absence of internal nodes, inverter-based Gm-C filters [1,2] allow achieving bandwidths beyond what is possible with opamp-RC techniques. The class-AB behavior of the inverter, together with the high transconductance for a given quiescent current, results in a high dynamic range for a given power consumption when optimally biased [3]. The major disadvantage of traditional inverter-based Gm-C filters is that they are tuned with the supply voltage, VDD, and hence require a finely controllable supply. Voltage regulators used to accomplish this require a voltage headroom (including margin for tuning) and degrade total power efficiency by tens of percent. In this paper, we show that by exploiting body biasing in an ultra-thin buried oxide (BOX) and body, fully-depleted SOI (UTBB FD-SOI) CMOS technology, we overcome the requirement for a tunable VDD in inverter-based Gm-C filters, while achieving high linearity over a wide supply voltage range.

Original language	English
Title of host publication	IEEE International Solid- State Circuits Conference, ISSCC 2015
Place of Publication	Picataway, NJ
Publisher	IEEE
Pages	96-98
Number of pages	3
ISBN (Print)	978-1-4799-6223-5
DOIs	https://doi.org/10.1109/ISSCC.2015.7062943
Publication status	Published - 23 Feb 2015
Event	IEEE International Solid- State Circuits Conference, ISSCC 2015 - San Francisco, United States Duration: 22 Feb 2015 → 26 Feb 2015

Conference

Conference	IEEE International Solid- State Circuits Conference, ISSCC 2015
Abbreviated title	ISSCC
Country/Territory	United States
City	San Francisco
Period	22/02/15 → 26/02/15

Keywords

EWI-25948
IR-95676
METIS-312560

Access to Document

10.1109/ISSCC.2015.7062943

ISSCC_2015_LechevallierAccepted author version, 1.43 MB

Cite this

@inproceedings{08f36680e5814ab79989fba36f317596,

title = "A forward-body-bias tuned 450MHz Gm-C 3rd-order low-pass filter in 28nm UTBB FD-SOI with >1dBVp IIP3 over a 0.7-to-1V supply",

abstract = "Due to the absence of internal nodes, inverter-based Gm-C filters [1,2] allow achieving bandwidths beyond what is possible with opamp-RC techniques. The class-AB behavior of the inverter, together with the high transconductance for a given quiescent current, results in a high dynamic range for a given power consumption when optimally biased [3]. The major disadvantage of traditional inverter-based Gm-C filters is that they are tuned with the supply voltage, VDD, and hence require a finely controllable supply. Voltage regulators used to accomplish this require a voltage headroom (including margin for tuning) and degrade total power efficiency by tens of percent. In this paper, we show that by exploiting body biasing in an ultra-thin buried oxide (BOX) and body, fully-depleted SOI (UTBB FD-SOI) CMOS technology, we overcome the requirement for a tunable VDD in inverter-based Gm-C filters, while achieving high linearity over a wide supply voltage range.",

keywords = "EWI-25948, IR-95676, METIS-312560",

author = "Lechevallier, {Joeri Boris} and R.E. Struiksma and Hani Sherry and Andreia Cathelin and Klumperink, {Eric A.M.} and Bram Nauta",

note = "eemcs-eprint-25948 ; IEEE International Solid- State Circuits Conference, ISSCC 2015, ISSCC ; Conference date: 22-02-2015 Through 26-02-2015",

year = "2015",

month = feb,

day = "23",

doi = "10.1109/ISSCC.2015.7062943",

language = "English",

isbn = "978-1-4799-6223-5",

pages = "96--98",

booktitle = "IEEE International Solid- State Circuits Conference, ISSCC 2015",

publisher = "IEEE",

address = "United States",

}

Lechevallier, JB, Struiksma, RE, Sherry, H, Cathelin, A, Klumperink, EAM & Nauta, B 2015, A forward-body-bias tuned 450MHz Gm-C 3rd-order low-pass filter in 28nm UTBB FD-SOI with >1dBVp IIP3 over a 0.7-to-1V supply. in IEEE International Solid- State Circuits Conference, ISSCC 2015. IEEE, Picataway, NJ, pp. 96-98, IEEE International Solid- State Circuits Conference, ISSCC 2015, San Francisco, California, United States, 22/02/15. https://doi.org/10.1109/ISSCC.2015.7062943

A forward-body-bias tuned 450MHz Gm-C 3rd-order low-pass filter in 28nm UTBB FD-SOI with >1dBVp IIP3 over a 0.7-to-1V supply. / Lechevallier, Joeri Boris; Struiksma, R.E.; Sherry, Hani et al.
IEEE International Solid- State Circuits Conference, ISSCC 2015. Picataway, NJ: IEEE, 2015. p. 96-98.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - A forward-body-bias tuned 450MHz Gm-C 3rd-order low-pass filter in 28nm UTBB FD-SOI with >1dBVp IIP3 over a 0.7-to-1V supply

AU - Lechevallier, Joeri Boris

AU - Struiksma, R.E.

AU - Sherry, Hani

AU - Cathelin, Andreia

AU - Klumperink, Eric A.M.

AU - Nauta, Bram

N1 - eemcs-eprint-25948

PY - 2015/2/23

Y1 - 2015/2/23

N2 - Due to the absence of internal nodes, inverter-based Gm-C filters [1,2] allow achieving bandwidths beyond what is possible with opamp-RC techniques. The class-AB behavior of the inverter, together with the high transconductance for a given quiescent current, results in a high dynamic range for a given power consumption when optimally biased [3]. The major disadvantage of traditional inverter-based Gm-C filters is that they are tuned with the supply voltage, VDD, and hence require a finely controllable supply. Voltage regulators used to accomplish this require a voltage headroom (including margin for tuning) and degrade total power efficiency by tens of percent. In this paper, we show that by exploiting body biasing in an ultra-thin buried oxide (BOX) and body, fully-depleted SOI (UTBB FD-SOI) CMOS technology, we overcome the requirement for a tunable VDD in inverter-based Gm-C filters, while achieving high linearity over a wide supply voltage range.

AB - Due to the absence of internal nodes, inverter-based Gm-C filters [1,2] allow achieving bandwidths beyond what is possible with opamp-RC techniques. The class-AB behavior of the inverter, together with the high transconductance for a given quiescent current, results in a high dynamic range for a given power consumption when optimally biased [3]. The major disadvantage of traditional inverter-based Gm-C filters is that they are tuned with the supply voltage, VDD, and hence require a finely controllable supply. Voltage regulators used to accomplish this require a voltage headroom (including margin for tuning) and degrade total power efficiency by tens of percent. In this paper, we show that by exploiting body biasing in an ultra-thin buried oxide (BOX) and body, fully-depleted SOI (UTBB FD-SOI) CMOS technology, we overcome the requirement for a tunable VDD in inverter-based Gm-C filters, while achieving high linearity over a wide supply voltage range.

KW - EWI-25948

KW - IR-95676

KW - METIS-312560

U2 - 10.1109/ISSCC.2015.7062943

DO - 10.1109/ISSCC.2015.7062943

M3 - Conference contribution

SN - 978-1-4799-6223-5

SP - 96

EP - 98

BT - IEEE International Solid- State Circuits Conference, ISSCC 2015

PB - IEEE

CY - Picataway, NJ

T2 - IEEE International Solid- State Circuits Conference, ISSCC 2015

Y2 - 22 February 2015 through 26 February 2015

ER -

A forward-body-bias tuned 450MHz Gm-C 3rd-order low-pass filter in 28nm UTBB FD-SOI with >1dBVp IIP3 over a 0.7-to-1V supply

Abstract

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Keywords

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