A forward-body-bias tuned 450MHz Gm-C 3rd-order low-pass filter in 28nm UTBB FD-SOI with >1dBVp IIP3 over a 0.7-to-1V supply

Joeri Boris Lechevallier, R.E. Struiksma, Hani Sherry, Andreia Cathelin, Eric A.M. Klumperink, Bram Nauta

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    Abstract

    Due to the absence of internal nodes, inverter-based Gm-C filters [1,2] allow achieving bandwidths beyond what is possible with opamp-RC techniques. The class-AB behavior of the inverter, together with the high transconductance for a given quiescent current, results in a high dynamic range for a given power consumption when optimally biased [3]. The major disadvantage of traditional inverter-based Gm-C filters is that they are tuned with the supply voltage, VDD, and hence require a finely controllable supply. Voltage regulators used to accomplish this require a voltage headroom (including margin for tuning) and degrade total power efficiency by tens of percent. In this paper, we show that by exploiting body biasing in an ultra-thin buried oxide (BOX) and body, fully-depleted SOI (UTBB FD-SOI) CMOS technology, we overcome the requirement for a tunable VDD in inverter-based Gm-C filters, while achieving high linearity over a wide supply voltage range.
    Original languageEnglish
    Title of host publicationIEEE International Solid- State Circuits Conference, ISSCC 2015
    Place of PublicationPicataway, NJ
    PublisherIEEE
    Pages96-98
    Number of pages3
    ISBN (Print)978-1-4799-6223-5
    DOIs
    Publication statusPublished - 23 Feb 2015
    EventIEEE International Solid- State Circuits Conference, ISSCC 2015 - San Francisco, United States
    Duration: 22 Feb 201526 Feb 2015

    Conference

    ConferenceIEEE International Solid- State Circuits Conference, ISSCC 2015
    Abbreviated titleISSCC
    CountryUnited States
    CitySan Francisco
    Period22/02/1526/02/15

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    Keywords

    • EWI-25948
    • IR-95676
    • METIS-312560

    Cite this

    Lechevallier, J. B., Struiksma, R. E., Sherry, H., Cathelin, A., Klumperink, E. A. M., & Nauta, B. (2015). A forward-body-bias tuned 450MHz Gm-C 3rd-order low-pass filter in 28nm UTBB FD-SOI with >1dBVp IIP3 over a 0.7-to-1V supply. In IEEE International Solid- State Circuits Conference, ISSCC 2015 (pp. 96-98). Picataway, NJ: IEEE. https://doi.org/10.1109/ISSCC.2015.7062943