A high efficiency lateral light emitting device on SOI

T. Hoang; P. Le Minh; J. Holleman; V. Zieren; M.J. Goossens; J. Schmitz

doi:10.1109/EDMO.2004.1412404

A high efficiency lateral light emitting device on SOI

T. Hoang, P. Le Minh, J. Holleman, V. Zieren, M.J. Goossens, J. Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

The infrared light emission of lateral p⁺-p-n⁺ diodes realized on SIMOX-SOI (separation by implantation of oxygen - silicon on insulator) substrates has been studied. The confinement of the free carriers in one dimension due to the buried oxide was suggested to be a key point to increase the band-to-band recombination probability in silicon light emitters. We found in our devices an external quantum efficiency comparable to previous results presented in the literature. The wavelength range of the emission was found to be 900-1300 nm which is common for indirect band to band recombination in Si. The SOI technology incorporates an insulating layer between the thin single crystal silicon layer and the much thicker substrate. This electrically insulating layer is also a thermal isolator and so self-heating effects are common in devices fabricated on SOI wafers. Investigation of its influence on the light emission and the light distribution in the device has been carried out in our research. In this paper, the characteristics of the device with different active region lengths were investigated and explained quantitatively based on the recombination rate of carriers inside the active area by using the simulation model in Silvaco.

Original language	English
Title of host publication	EDMO 2004
Subtitle of host publication	12th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications
Place of Publication	Piscataway, NJ
Publisher	IEEE Computer Society
Pages	87-91
Number of pages	5
ISBN (Print)	0780385748
DOIs	https://doi.org/10.1109/EDMO.2004.1412404
Publication status	Published - 4 Apr 2005
Event	12th International Symposium on Electron Devices for Microwave and Optoelectronic Applications, EDMO 2004 - Berg-en-Dal Rest Camp, Kruger National Park, South Africa Duration: 8 Nov 2004 → 9 Nov 2004 Conference number: 12

Conference

Conference	12th International Symposium on Electron Devices for Microwave and Optoelectronic Applications, EDMO 2004
Abbreviated title	EDMO
Country/Territory	South Africa
City	Kruger National Park
Period	8/11/04 → 9/11/04

Keywords

Confinement
Light distribution
Light emission
Radiative recombination
SOI technology

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10.1109/EDMO.2004.1412404

A High Efficiency Lateral Light Emitting Device on SOISubmitted version, 548 KBLicence: Unspecified
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Cite this

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title = "A high efficiency lateral light emitting device on SOI",

abstract = "The infrared light emission of lateral p+-p-n+ diodes realized on SIMOX-SOI (separation by implantation of oxygen - silicon on insulator) substrates has been studied. The confinement of the free carriers in one dimension due to the buried oxide was suggested to be a key point to increase the band-to-band recombination probability in silicon light emitters. We found in our devices an external quantum efficiency comparable to previous results presented in the literature. The wavelength range of the emission was found to be 900-1300 nm which is common for indirect band to band recombination in Si. The SOI technology incorporates an insulating layer between the thin single crystal silicon layer and the much thicker substrate. This electrically insulating layer is also a thermal isolator and so self-heating effects are common in devices fabricated on SOI wafers. Investigation of its influence on the light emission and the light distribution in the device has been carried out in our research. In this paper, the characteristics of the device with different active region lengths were investigated and explained quantitatively based on the recombination rate of carriers inside the active area by using the simulation model in Silvaco.",

keywords = "Confinement, Light distribution, Light emission, Radiative recombination, SOI technology",

author = "T. Hoang and {Le Minh}, P. and J. Holleman and V. Zieren and M.J. Goossens and J. Schmitz",

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Hoang, T, Le Minh, P, Holleman, J, Zieren, V, Goossens, MJ & Schmitz, J 2005, A high efficiency lateral light emitting device on SOI. in EDMO 2004: 12th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications. IEEE Computer Society, Piscataway, NJ, pp. 87-91, 12th International Symposium on Electron Devices for Microwave and Optoelectronic Applications, EDMO 2004, Kruger National Park, South Africa, 8/11/04. https://doi.org/10.1109/EDMO.2004.1412404

A high efficiency lateral light emitting device on SOI. / Hoang, T.; Le Minh, P.; Holleman, J. et al.

EDMO 2004: 12th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications. Piscataway, NJ : IEEE Computer Society, 2005. p. 87-91.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Schmitz, J.

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N2 - The infrared light emission of lateral p+-p-n+ diodes realized on SIMOX-SOI (separation by implantation of oxygen - silicon on insulator) substrates has been studied. The confinement of the free carriers in one dimension due to the buried oxide was suggested to be a key point to increase the band-to-band recombination probability in silicon light emitters. We found in our devices an external quantum efficiency comparable to previous results presented in the literature. The wavelength range of the emission was found to be 900-1300 nm which is common for indirect band to band recombination in Si. The SOI technology incorporates an insulating layer between the thin single crystal silicon layer and the much thicker substrate. This electrically insulating layer is also a thermal isolator and so self-heating effects are common in devices fabricated on SOI wafers. Investigation of its influence on the light emission and the light distribution in the device has been carried out in our research. In this paper, the characteristics of the device with different active region lengths were investigated and explained quantitatively based on the recombination rate of carriers inside the active area by using the simulation model in Silvaco.

AB - The infrared light emission of lateral p+-p-n+ diodes realized on SIMOX-SOI (separation by implantation of oxygen - silicon on insulator) substrates has been studied. The confinement of the free carriers in one dimension due to the buried oxide was suggested to be a key point to increase the band-to-band recombination probability in silicon light emitters. We found in our devices an external quantum efficiency comparable to previous results presented in the literature. The wavelength range of the emission was found to be 900-1300 nm which is common for indirect band to band recombination in Si. The SOI technology incorporates an insulating layer between the thin single crystal silicon layer and the much thicker substrate. This electrically insulating layer is also a thermal isolator and so self-heating effects are common in devices fabricated on SOI wafers. Investigation of its influence on the light emission and the light distribution in the device has been carried out in our research. In this paper, the characteristics of the device with different active region lengths were investigated and explained quantitatively based on the recombination rate of carriers inside the active area by using the simulation model in Silvaco.

KW - Confinement

KW - Light distribution

KW - Light emission

KW - Radiative recombination

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PB - IEEE Computer Society

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T2 - 12th International Symposium on Electron Devices for Microwave and Optoelectronic Applications, EDMO 2004

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ER -

A high efficiency lateral light emitting device on SOI

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