A high efficiency lateral light emitting device on SOI

T. Hoang, P. Le Minh, J. Holleman, V. Zieren, M.J. Goossens, J. Schmitz

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    Abstract

    The infrared light emission of lateral p+-p-n+ diodes realized on SIMOX-SOI (separation by implantation of oxygen - silicon on insulator) substrates has been studied. The confinement of the free carriers in one dimension due to the buried oxide was suggested to be a key point to increase the band-to-band recombination probability in silicon light emitters. We found in our devices an external quantum efficiency comparable to previous results presented in the literature. The wavelength range of the emission was found to be 900-1300 nm which is common for indirect band to band recombination in Si. The SOI technology incorporates an insulating layer between the thin single crystal silicon layer and the much thicker substrate. This electrically insulating layer is also a thermal isolator and so self-heating effects are common in devices fabricated on SOI wafers. Investigation of its influence on the light emission and the light distribution in the device has been carried out in our research. In this paper, the characteristics of the device with different active region lengths were investigated and explained quantitatively based on the recombination rate of carriers inside the active area by using the simulation model in Silvaco.
    Original languageEnglish
    Title of host publicationEDMO 2004
    Subtitle of host publication12th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications
    Place of PublicationPiscataway, NJ
    PublisherIEEE Computer Society
    Pages87-91
    Number of pages5
    ISBN (Print)0780385748
    DOIs
    Publication statusPublished - 4 Apr 2005
    Event12th International Symposium on Electron Devices for Microwave and Optoelectronic Applications, EDMO 2004 - Berg-en-Dal Rest Camp, Kruger National Park, South Africa
    Duration: 8 Nov 20049 Nov 2004
    Conference number: 12

    Conference

    Conference12th International Symposium on Electron Devices for Microwave and Optoelectronic Applications, EDMO 2004
    Abbreviated titleEDMO
    CountrySouth Africa
    CityKruger National Park
    Period8/11/049/11/04

    Keywords

    • Confinement
    • Light distribution
    • Light emission
    • Radiative recombination
    • SOI technology

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