Abstract
A 1.5µm high-energy ion implanted BiCMOS process is proposed. This process offers NMOS, PMOS, vertical npn transistors and VIPMOS-EPROM devices. The process structure is modular in order to achieve CMOS and bipolar transistors in uncompromised forms. Consequently, the N-well and collector regions are defined separately. Conflicting requirements for the collector doping profile have been optimized towards practical electrical device characteristics.
Original language | English |
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Title of host publication | 20th European Solid State Device Research Conference, ESSDERC '90 |
Place of Publication | Piscataway, NJ, USA |
Publisher | IEEE |
Pages | 515-518 |
Number of pages | 4 |
ISBN (Print) | 0-7503-0065-5 |
Publication status | Published - 10 Sept 1990 |
Event | 20th European Solid State Device Research Conference, ESSDERC 1990 - Nottingham, United Kingdom Duration: 10 Sept 1990 → 13 Sept 1990 Conference number: 20 |
Conference
Conference | 20th European Solid State Device Research Conference, ESSDERC 1990 |
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Abbreviated title | ESSDERC |
Country/Territory | United Kingdom |
City | Nottingham |
Period | 10/09/90 → 13/09/90 |
Keywords
- Bi-CMOS process
- BiCMOS integrated circuits
- EPROM
- Ion implantation
- MOS devices
- CMOS process
- Bipolar transistors
- Boron
- Doping profiles
- Epitaxial growth , Reproducibility of results