A high energy ion implanted BiCMOS process with compatible EPROM structures

R.C.M. Wijburg, G.J. Hemink, J. Middelhoek, H. Wallinga

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    1 Citation (Scopus)
    35 Downloads (Pure)

    Abstract

    A 1.5µm high-energy ion implanted BiCMOS process is proposed. This process offers NMOS, PMOS, vertical npn transistors and VIPMOS-EPROM devices. The process structure is modular in order to achieve CMOS and bipolar transistors in uncompromised forms. Consequently, the N-well and collector regions are defined separately. Conflicting requirements for the collector doping profile have been optimized towards practical electrical device characteristics.
    Original languageEnglish
    Title of host publication20th European Solid State Device Research Conference, ESSDERC '90
    Place of PublicationPiscataway, NJ, USA
    PublisherIEEE
    Pages515-518
    Number of pages4
    ISBN (Print)0-7503-0065-5
    Publication statusPublished - 10 Sept 1990
    Event20th European Solid State Device Research Conference, ESSDERC 1990 - Nottingham, United Kingdom
    Duration: 10 Sept 199013 Sept 1990
    Conference number: 20

    Conference

    Conference20th European Solid State Device Research Conference, ESSDERC 1990
    Abbreviated titleESSDERC
    Country/TerritoryUnited Kingdom
    CityNottingham
    Period10/09/9013/09/90

    Keywords

    • Bi-CMOS process
    • BiCMOS integrated circuits
    • EPROM
    • Ion implantation
    • MOS devices
    • CMOS process
    • Bipolar transistors
    • Boron
    • Doping profiles
    • Epitaxial growth , Reproducibility of results

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