A high-linearity CMOS receiver achieving +44dBm IIP3 and +13dBm B1dB for SAW-less LTE radio

Yuan-Ching  Lien; Eric A.M. Klumperink; Bernard Tenbroek; Jon Strange; Bram  Nauta

doi:10.1109/ISSCC.2017.7870436

A high-linearity CMOS receiver achieving +44dBm IIP3 and +13dBm B1dB for SAW-less LTE radio

Yuan-Ching Lien, Eric A.M. Klumperink, Bernard Tenbroek, Jon Strange, Bram Nauta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

73 Citations (Scopus)

1762 Downloads (Pure)

Abstract

LTE-advanced wireless receivers require high-linearity up-front filtering to prevent corruption of the in-band signals by strong out-of-band (OOB) signals and self-interference from the transmitter. SAW duplexer filters are generally used for this purpose, but supporting the plethora of existing and new bands becomes troublesome with separate filters for each band. In this paper we explore the possibility of combining an isolator with on-chip filtering. However, even with 15dB isolation, the on-chip filter needs to deal with up to +10dBm TX leakage and -15dBm OOB blocking, which requires an extremely high IIP3 around +50dBm and IIP2 around +90dBm. Recently inductorless tunable N-path-filter-based receivers achieved >10dBm compression point and good IIP3 of 20 to 30dBm. In order to further improve the receiver linearity to approach the extremely high IIP3 requirement for a SAW-less receiver, a high-linearity N-path bandpass/notch filter topology and receiver architecture are proposed in this paper.

Original language	English
Title of host publication	Solid-State Circuits Conference (ISSCC), 2017 IEEE International
Place of Publication	Piscataway USA
Publisher	IEEE
Pages	412-413
ISBN (Electronic)	2376-8606
ISBN (Print)	978-1-5090-3759-9
DOIs	https://doi.org/10.1109/ISSCC.2017.7870436
Publication status	Published - 8 Feb 2017
Event	IEEE International Solid- State Circuits Conference, ISSCC 2017 - San Francisco Marriott, San Francisco, United States Duration: 5 Feb 2017 → 9 Feb 2017

Conference

Conference	IEEE International Solid- State Circuits Conference, ISSCC 2017
Abbreviated title	ISSCC 2017
Country/Territory	United States
City	San Francisco
Period	5/02/17 → 9/02/17

Access to Document

10.1109/ISSCC.2017.7870436

YC Lien ISSCC 2017Accepted author version, 1.36 MB

73 Citations
1 PhD Thesis - Research UT, graduation UT

Saw-Less radio receivers in CMOS
Lien, Y.-C., 3 Oct 2018, Enschede: University of Twente. 157 p.
Research output: Thesis › PhD Thesis - Research UT, graduation UT

Open Access
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1013 Downloads (Pure)

Cite this

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title = "A high-linearity CMOS receiver achieving +44dBm IIP3 and +13dBm B1dB for SAW-less LTE radio",

abstract = "LTE-advanced wireless receivers require high-linearity up-front filtering to prevent corruption of the in-band signals by strong out-of-band (OOB) signals and self-interference from the transmitter. SAW duplexer filters are generally used for this purpose, but supporting the plethora of existing and new bands becomes troublesome with separate filters for each band. In this paper we explore the possibility of combining an isolator with on-chip filtering. However, even with 15dB isolation, the on-chip filter needs to deal with up to +10dBm TX leakage and -15dBm OOB blocking, which requires an extremely high IIP3 around +50dBm and IIP2 around +90dBm. Recently inductorless tunable N-path-filter-based receivers achieved >10dBm compression point and good IIP3 of 20 to 30dBm. In order to further improve the receiver linearity to approach the extremely high IIP3 requirement for a SAW-less receiver, a high-linearity N-path bandpass/notch filter topology and receiver architecture are proposed in this paper.",

author = "Yuan-Ching Lien and Klumperink, {Eric A.M.} and Bernard Tenbroek and Jon Strange and Bram Nauta",

year = "2017",

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language = "English",

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pages = "412--413",

booktitle = "Solid-State Circuits Conference (ISSCC), 2017 IEEE International",

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Lien, Y-C, Klumperink, EAM, Tenbroek, B, Strange, J & Nauta, B 2017, A high-linearity CMOS receiver achieving +44dBm IIP3 and +13dBm B1dB for SAW-less LTE radio. in Solid-State Circuits Conference (ISSCC), 2017 IEEE International. IEEE, Piscataway USA, pp. 412-413, IEEE International Solid- State Circuits Conference, ISSCC 2017, San Francisco, California, United States, 5/02/17. https://doi.org/10.1109/ISSCC.2017.7870436

A high-linearity CMOS receiver achieving +44dBm IIP3 and +13dBm B1dB for SAW-less LTE radio. / Lien, Yuan-Ching ; Klumperink, Eric A.M.; Tenbroek, Bernard et al.
Solid-State Circuits Conference (ISSCC), 2017 IEEE International. Piscataway USA: IEEE, 2017. p. 412-413.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Strange, Jon

AU - Nauta, Bram

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N2 - LTE-advanced wireless receivers require high-linearity up-front filtering to prevent corruption of the in-band signals by strong out-of-band (OOB) signals and self-interference from the transmitter. SAW duplexer filters are generally used for this purpose, but supporting the plethora of existing and new bands becomes troublesome with separate filters for each band. In this paper we explore the possibility of combining an isolator with on-chip filtering. However, even with 15dB isolation, the on-chip filter needs to deal with up to +10dBm TX leakage and -15dBm OOB blocking, which requires an extremely high IIP3 around +50dBm and IIP2 around +90dBm. Recently inductorless tunable N-path-filter-based receivers achieved >10dBm compression point and good IIP3 of 20 to 30dBm. In order to further improve the receiver linearity to approach the extremely high IIP3 requirement for a SAW-less receiver, a high-linearity N-path bandpass/notch filter topology and receiver architecture are proposed in this paper.

AB - LTE-advanced wireless receivers require high-linearity up-front filtering to prevent corruption of the in-band signals by strong out-of-band (OOB) signals and self-interference from the transmitter. SAW duplexer filters are generally used for this purpose, but supporting the plethora of existing and new bands becomes troublesome with separate filters for each band. In this paper we explore the possibility of combining an isolator with on-chip filtering. However, even with 15dB isolation, the on-chip filter needs to deal with up to +10dBm TX leakage and -15dBm OOB blocking, which requires an extremely high IIP3 around +50dBm and IIP2 around +90dBm. Recently inductorless tunable N-path-filter-based receivers achieved >10dBm compression point and good IIP3 of 20 to 30dBm. In order to further improve the receiver linearity to approach the extremely high IIP3 requirement for a SAW-less receiver, a high-linearity N-path bandpass/notch filter topology and receiver architecture are proposed in this paper.

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EP - 413

BT - Solid-State Circuits Conference (ISSCC), 2017 IEEE International

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ER -

A high-linearity CMOS receiver achieving +44dBm IIP3 and +13dBm B1dB for SAW-less LTE radio

Abstract

Conference

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Research output

Saw-Less radio receivers in CMOS

Cite this