A High Voltage Swing 1.9 GHz PA in Standard CMOS

W.A.J. Aartsen, Anne J. Annema, Bram Nauta

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

348 Downloads (Pure)

Abstract

A circuit technique for RF power amplifiers that reliably handle voltage peaks well above the nominal supply voltage is presented. To achieve this high-voltage tolerance the circuit implements switched-cascode transistors that yield reliable operation for voltages up to 7V at RF frequencies in a 2.5V CMOS process. Advantages of this include the possibility to use higherohmic load resistors. The impact of load resistances with higher ohmic values is two-fold. Firstly the demands on matching networks are loosened which translates into a higher efficiency for the matching network. Secondly the signal currents are lower which decreases the impact of any series resistance. A design of a 1.9 GHz power amplifier using the switched cascode approach was made. Simulations on the extracted layout of a single ended side showed 21 dBm of output power at a 25 ohm load with 21 % PAE. A layout improvement was estimated to result in 22 dBm at 30 % PAE.
Original languageUndefined
Title of host publicationthe 13th ProRISC workshop on Circuits, Systems and Signal Processing
Place of PublicationUtrecht
PublisherSTW
Pages141-145
Number of pages5
ISBN (Print)90-73461-33-2
Publication statusPublished - Nov 2002
Event13th Workshop on Circuits, Systems and Signal Processing, ProRISC 2002 - Veldhoven, Netherlands
Duration: 28 Nov 200229 Nov 2002
Conference number: 13

Publication series

Name
PublisherSTW Technology Foundation

Workshop

Workshop13th Workshop on Circuits, Systems and Signal Processing, ProRISC 2002
CountryNetherlands
CityVeldhoven
Period28/11/0229/11/02

Keywords

  • EWI-14417
  • High voltage swing
  • switched cascode
  • power amplifier
  • IR-67442
  • CMOS RF
  • METIS-207354

Cite this

Aartsen, W. A. J., Annema, A. J., & Nauta, B. (2002). A High Voltage Swing 1.9 GHz PA in Standard CMOS. In the 13th ProRISC workshop on Circuits, Systems and Signal Processing (pp. 141-145). Utrecht: STW.
Aartsen, W.A.J. ; Annema, Anne J. ; Nauta, Bram. / A High Voltage Swing 1.9 GHz PA in Standard CMOS. the 13th ProRISC workshop on Circuits, Systems and Signal Processing. Utrecht : STW, 2002. pp. 141-145
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title = "A High Voltage Swing 1.9 GHz PA in Standard CMOS",
abstract = "A circuit technique for RF power amplifiers that reliably handle voltage peaks well above the nominal supply voltage is presented. To achieve this high-voltage tolerance the circuit implements switched-cascode transistors that yield reliable operation for voltages up to 7V at RF frequencies in a 2.5V CMOS process. Advantages of this include the possibility to use higherohmic load resistors. The impact of load resistances with higher ohmic values is two-fold. Firstly the demands on matching networks are loosened which translates into a higher efficiency for the matching network. Secondly the signal currents are lower which decreases the impact of any series resistance. A design of a 1.9 GHz power amplifier using the switched cascode approach was made. Simulations on the extracted layout of a single ended side showed 21 dBm of output power at a 25 ohm load with 21 {\%} PAE. A layout improvement was estimated to result in 22 dBm at 30 {\%} PAE.",
keywords = "EWI-14417, High voltage swing, switched cascode, power amplifier, IR-67442, CMOS RF, METIS-207354",
author = "W.A.J. Aartsen and Annema, {Anne J.} and Bram Nauta",
year = "2002",
month = "11",
language = "Undefined",
isbn = "90-73461-33-2",
publisher = "STW",
pages = "141--145",
booktitle = "the 13th ProRISC workshop on Circuits, Systems and Signal Processing",

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Aartsen, WAJ, Annema, AJ & Nauta, B 2002, A High Voltage Swing 1.9 GHz PA in Standard CMOS. in the 13th ProRISC workshop on Circuits, Systems and Signal Processing. STW, Utrecht, pp. 141-145, 13th Workshop on Circuits, Systems and Signal Processing, ProRISC 2002, Veldhoven, Netherlands, 28/11/02.

A High Voltage Swing 1.9 GHz PA in Standard CMOS. / Aartsen, W.A.J.; Annema, Anne J.; Nauta, Bram.

the 13th ProRISC workshop on Circuits, Systems and Signal Processing. Utrecht : STW, 2002. p. 141-145.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

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AU - Annema, Anne J.

AU - Nauta, Bram

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N2 - A circuit technique for RF power amplifiers that reliably handle voltage peaks well above the nominal supply voltage is presented. To achieve this high-voltage tolerance the circuit implements switched-cascode transistors that yield reliable operation for voltages up to 7V at RF frequencies in a 2.5V CMOS process. Advantages of this include the possibility to use higherohmic load resistors. The impact of load resistances with higher ohmic values is two-fold. Firstly the demands on matching networks are loosened which translates into a higher efficiency for the matching network. Secondly the signal currents are lower which decreases the impact of any series resistance. A design of a 1.9 GHz power amplifier using the switched cascode approach was made. Simulations on the extracted layout of a single ended side showed 21 dBm of output power at a 25 ohm load with 21 % PAE. A layout improvement was estimated to result in 22 dBm at 30 % PAE.

AB - A circuit technique for RF power amplifiers that reliably handle voltage peaks well above the nominal supply voltage is presented. To achieve this high-voltage tolerance the circuit implements switched-cascode transistors that yield reliable operation for voltages up to 7V at RF frequencies in a 2.5V CMOS process. Advantages of this include the possibility to use higherohmic load resistors. The impact of load resistances with higher ohmic values is two-fold. Firstly the demands on matching networks are loosened which translates into a higher efficiency for the matching network. Secondly the signal currents are lower which decreases the impact of any series resistance. A design of a 1.9 GHz power amplifier using the switched cascode approach was made. Simulations on the extracted layout of a single ended side showed 21 dBm of output power at a 25 ohm load with 21 % PAE. A layout improvement was estimated to result in 22 dBm at 30 % PAE.

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Aartsen WAJ, Annema AJ, Nauta B. A High Voltage Swing 1.9 GHz PA in Standard CMOS. In the 13th ProRISC workshop on Circuits, Systems and Signal Processing. Utrecht: STW. 2002. p. 141-145