A highly sensitive spin-valve transistor

O.M.J. van 't Erve, R. Vlutters, P.S. Anil Kumar, S.D. Kim, R. Jansen, J.C. Lodder

    Research output: Chapter in Book/Report/Conference proceedingChapterAcademicpeer-review

    Abstract

    In this paper we present a spin-valve transistor made with a silicon on insulator wafer as emitter and a double sided polished Si wafer as collector. Using vacuum metal bonding we obtain a three terminal device in which a spin-valve layer is sandwiched between two Si wafers. We measure a 217% change in the collector current with magnetic field using a spin valve that shows only 0.5% resistance change in a current in plane measurement.
    Original languageUndefined
    Title of host publicationMagnetic Storage Systems beyond 2000
    EditorsG.C. Hadjipanayis
    Place of PublicationDordrecht
    PublisherKluwer Academic Publishers
    Pages441-444
    Number of pages3
    ISBN (Print)1-4020-0117-7
    Publication statusPublished - 2001

    Publication series

    NameNATO SCIENCE SERIES
    PublisherKluwer Academic Publishers
    Number41
    VolumeII: Mathematics, Physics and Chemistry

    Keywords

    • METIS-201566
    • IR-62952
    • SMI-NE: From 2006 in EWI-NE
    • EWI-5409

    Cite this

    van 't Erve, O. M. J., Vlutters, R., Anil Kumar, P. S., Kim, S. D., Jansen, R., & Lodder, J. C. (2001). A highly sensitive spin-valve transistor. In G. C. Hadjipanayis (Ed.), Magnetic Storage Systems beyond 2000 (pp. 441-444). (NATO SCIENCE SERIES; Vol. II: Mathematics, Physics and Chemistry, No. 41). Dordrecht: Kluwer Academic Publishers.