A highly sensitive spin-valve transistor

O.M.J. van 't Erve, R. Vlutters, P.S. Anil Kumar, S.D. Kim, R. Jansen, J.C. Lodder

Research output: Chapter in Book/Report/Conference proceedingChapterAcademicpeer-review

Abstract

In this paper we present a spin-valve transistor made with a silicon on insulator wafer as emitter and a double sided polished Si wafer as collector. Using vacuum metal bonding we obtain a three terminal device in which a spin-valve layer is sandwiched between two Si wafers. We measure a 217% change in the collector current with magnetic field using a spin valve that shows only 0.5% resistance change in a current in plane measurement.
Original languageUndefined
Title of host publicationMagnetic Storage Systems beyond 2000
EditorsG.C. Hadjipanayis
Place of PublicationDordrecht
PublisherKluwer Academic Publishers
Pages441-444
Number of pages3
ISBN (Print)1-4020-0117-7
Publication statusPublished - 2001

Publication series

NameNATO SCIENCE SERIES
PublisherKluwer Academic Publishers
Number41
VolumeII: Mathematics, Physics and Chemistry

Keywords

  • METIS-201566
  • IR-62952
  • SMI-NE: From 2006 in EWI-NE
  • EWI-5409

Cite this

van 't Erve, O. M. J., Vlutters, R., Anil Kumar, P. S., Kim, S. D., Jansen, R., & Lodder, J. C. (2001). A highly sensitive spin-valve transistor. In G. C. Hadjipanayis (Ed.), Magnetic Storage Systems beyond 2000 (pp. 441-444). (NATO SCIENCE SERIES; Vol. II: Mathematics, Physics and Chemistry, No. 41). Dordrecht: Kluwer Academic Publishers.
van 't Erve, O.M.J. ; Vlutters, R. ; Anil Kumar, P.S. ; Kim, S.D. ; Jansen, R. ; Lodder, J.C. / A highly sensitive spin-valve transistor. Magnetic Storage Systems beyond 2000. editor / G.C. Hadjipanayis. Dordrecht : Kluwer Academic Publishers, 2001. pp. 441-444 (NATO SCIENCE SERIES; 41).
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abstract = "In this paper we present a spin-valve transistor made with a silicon on insulator wafer as emitter and a double sided polished Si wafer as collector. Using vacuum metal bonding we obtain a three terminal device in which a spin-valve layer is sandwiched between two Si wafers. We measure a 217{\%} change in the collector current with magnetic field using a spin valve that shows only 0.5{\%} resistance change in a current in plane measurement.",
keywords = "METIS-201566, IR-62952, SMI-NE: From 2006 in EWI-NE, EWI-5409",
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van 't Erve, OMJ, Vlutters, R, Anil Kumar, PS, Kim, SD, Jansen, R & Lodder, JC 2001, A highly sensitive spin-valve transistor. in GC Hadjipanayis (ed.), Magnetic Storage Systems beyond 2000. NATO SCIENCE SERIES, no. 41, vol. II: Mathematics, Physics and Chemistry, Kluwer Academic Publishers, Dordrecht, pp. 441-444.

A highly sensitive spin-valve transistor. / van 't Erve, O.M.J.; Vlutters, R.; Anil Kumar, P.S.; Kim, S.D.; Jansen, R.; Lodder, J.C.

Magnetic Storage Systems beyond 2000. ed. / G.C. Hadjipanayis. Dordrecht : Kluwer Academic Publishers, 2001. p. 441-444 (NATO SCIENCE SERIES; Vol. II: Mathematics, Physics and Chemistry, No. 41).

Research output: Chapter in Book/Report/Conference proceedingChapterAcademicpeer-review

TY - CHAP

T1 - A highly sensitive spin-valve transistor

AU - van 't Erve, O.M.J.

AU - Vlutters, R.

AU - Anil Kumar, P.S.

AU - Kim, S.D.

AU - Jansen, R.

AU - Lodder, J.C.

N1 - Imported from SMI Reference manager

PY - 2001

Y1 - 2001

N2 - In this paper we present a spin-valve transistor made with a silicon on insulator wafer as emitter and a double sided polished Si wafer as collector. Using vacuum metal bonding we obtain a three terminal device in which a spin-valve layer is sandwiched between two Si wafers. We measure a 217% change in the collector current with magnetic field using a spin valve that shows only 0.5% resistance change in a current in plane measurement.

AB - In this paper we present a spin-valve transistor made with a silicon on insulator wafer as emitter and a double sided polished Si wafer as collector. Using vacuum metal bonding we obtain a three terminal device in which a spin-valve layer is sandwiched between two Si wafers. We measure a 217% change in the collector current with magnetic field using a spin valve that shows only 0.5% resistance change in a current in plane measurement.

KW - METIS-201566

KW - IR-62952

KW - SMI-NE: From 2006 in EWI-NE

KW - EWI-5409

M3 - Chapter

SN - 1-4020-0117-7

T3 - NATO SCIENCE SERIES

SP - 441

EP - 444

BT - Magnetic Storage Systems beyond 2000

A2 - Hadjipanayis, G.C.

PB - Kluwer Academic Publishers

CY - Dordrecht

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van 't Erve OMJ, Vlutters R, Anil Kumar PS, Kim SD, Jansen R, Lodder JC. A highly sensitive spin-valve transistor. In Hadjipanayis GC, editor, Magnetic Storage Systems beyond 2000. Dordrecht: Kluwer Academic Publishers. 2001. p. 441-444. (NATO SCIENCE SERIES; 41).