A highly sensitive spin-valve transistor

O.M.J. van 't Erve; R. Vlutters; P.S. Anil Kumar; S.D. Kim; R. Jansen; J.C. Lodder

A highly sensitive spin-valve transistor

O.M.J. van 't Erve, R. Vlutters, P.S. Anil Kumar, S.D. Kim, R. Jansen, J.C. Lodder

Research output: Chapter in Book/Report/Conference proceeding › Chapter › Academic › peer-review

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Abstract

In this paper we present a spin-valve transistor made with a silicon on insulator wafer as emitter and a double sided polished Si wafer as collector. Using vacuum metal bonding we obtain a three terminal device in which a spin-valve layer is sandwiched between two Si wafers. We measure a 217% change in the collector current with magnetic field using a spin valve that shows only 0.5% resistance change in a current in plane measurement.

Original language	Undefined
Title of host publication	Magnetic Storage Systems beyond 2000
Editors	G.C. Hadjipanayis
Place of Publication	Dordrecht
Publisher	Kluwer Academic Publishers
Pages	441-444
Number of pages	3
ISBN (Print)	1-4020-0117-7
Publication status	Published - 2001

Publication series

Name	NATO SCIENCE SERIES
Publisher	Kluwer Academic Publishers
Number	41
Volume	II: Mathematics, Physics and Chemistry

Keywords

METIS-201566
IR-62952
SMI-NE: From 2006 in EWI-NE
EWI-5409

Access to Document

http://eprints.eemcs.utwente.nl/secure2/5409/01/ERVE2001A.PDF

Cite this

van 't Erve, O. M. J., Vlutters, R., Anil Kumar, P. S., Kim, S. D., Jansen, R., & Lodder, J. C. (2001). A highly sensitive spin-valve transistor. In G. C. Hadjipanayis (Ed.), Magnetic Storage Systems beyond 2000 (pp. 441-444). (NATO SCIENCE SERIES; Vol. II: Mathematics, Physics and Chemistry, No. 41). Kluwer Academic Publishers. http://eprints.eemcs.utwente.nl/secure2/5409/01/ERVE2001A.PDF

@inbook{7a106b78867846348817a64b1ae4f94b,

title = "A highly sensitive spin-valve transistor",

abstract = "In this paper we present a spin-valve transistor made with a silicon on insulator wafer as emitter and a double sided polished Si wafer as collector. Using vacuum metal bonding we obtain a three terminal device in which a spin-valve layer is sandwiched between two Si wafers. We measure a 217% change in the collector current with magnetic field using a spin valve that shows only 0.5% resistance change in a current in plane measurement.",

keywords = "METIS-201566, IR-62952, SMI-NE: From 2006 in EWI-NE, EWI-5409",

author = "{van 't Erve}, O.M.J. and R. Vlutters and {Anil Kumar}, P.S. and S.D. Kim and R. Jansen and J.C. Lodder",

note = "Imported from SMI Reference manager",

year = "2001",

language = "Undefined",

isbn = "1-4020-0117-7",

series = "NATO SCIENCE SERIES",

publisher = "Kluwer Academic Publishers",

number = "41",

pages = "441--444",

editor = "G.C. Hadjipanayis",

booktitle = "Magnetic Storage Systems beyond 2000",

address = "Netherlands",

}

van 't Erve, OMJ, Vlutters, R, Anil Kumar, PS, Kim, SD, Jansen, R & Lodder, JC 2001, A highly sensitive spin-valve transistor. in GC Hadjipanayis (ed.), Magnetic Storage Systems beyond 2000. NATO SCIENCE SERIES, no. 41, vol. II: Mathematics, Physics and Chemistry, Kluwer Academic Publishers, Dordrecht, pp. 441-444. <http://eprints.eemcs.utwente.nl/secure2/5409/01/ERVE2001A.PDF>

A highly sensitive spin-valve transistor. / van 't Erve, O.M.J.; Vlutters, R.; Anil Kumar, P.S. et al.
Magnetic Storage Systems beyond 2000. ed. / G.C. Hadjipanayis. Dordrecht: Kluwer Academic Publishers, 2001. p. 441-444 (NATO SCIENCE SERIES; Vol. II: Mathematics, Physics and Chemistry, No. 41).

Research output: Chapter in Book/Report/Conference proceeding › Chapter › Academic › peer-review

TY - CHAP

T1 - A highly sensitive spin-valve transistor

AU - van 't Erve, O.M.J.

AU - Vlutters, R.

AU - Anil Kumar, P.S.

AU - Kim, S.D.

AU - Jansen, R.

AU - Lodder, J.C.

N1 - Imported from SMI Reference manager

PY - 2001

Y1 - 2001

N2 - In this paper we present a spin-valve transistor made with a silicon on insulator wafer as emitter and a double sided polished Si wafer as collector. Using vacuum metal bonding we obtain a three terminal device in which a spin-valve layer is sandwiched between two Si wafers. We measure a 217% change in the collector current with magnetic field using a spin valve that shows only 0.5% resistance change in a current in plane measurement.

AB - In this paper we present a spin-valve transistor made with a silicon on insulator wafer as emitter and a double sided polished Si wafer as collector. Using vacuum metal bonding we obtain a three terminal device in which a spin-valve layer is sandwiched between two Si wafers. We measure a 217% change in the collector current with magnetic field using a spin valve that shows only 0.5% resistance change in a current in plane measurement.

KW - METIS-201566

KW - IR-62952

KW - SMI-NE: From 2006 in EWI-NE

KW - EWI-5409

M3 - Chapter

SN - 1-4020-0117-7

T3 - NATO SCIENCE SERIES

SP - 441

EP - 444

BT - Magnetic Storage Systems beyond 2000

A2 - Hadjipanayis, G.C.

PB - Kluwer Academic Publishers

CY - Dordrecht

ER -