A low-cost BiCMOS process with metal gates

H. W. Van Zeijl*, L. K. Nanver

*Corresponding author for this work

Research output: Contribution to journalConference articleAcademicpeer-review

Abstract

A low-complexity and low cost double-metal bipolar complementary metal oxide semiconductor (BiCMOS) process was proposed. Significant process simplification was achieved because the process flow contained steps common to both the bipolar and the CMOS device formation. Low complexity was assured by the use of implanted emitters, metal gates and inside nitride spacers. The poly filled cavities provided submicron contact to these regions. By decoupling the source-drain thermal budget from gate-stack formation, metal gates were realized.

Original languageEnglish
JournalMaterials Research Society Symposium - Proceedings
Volume611
DOIs
Publication statusPublished - 1 Jan 2001
Externally publishedYes
EventGate Stack and Silicide Issues in Silicon Processing 2000 - San Francisco, United States
Duration: 25 Apr 200027 Apr 2000

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