A low-complexity and low cost double-metal bipolar complementary metal oxide semiconductor (BiCMOS) process was proposed. Significant process simplification was achieved because the process flow contained steps common to both the bipolar and the CMOS device formation. Low complexity was assured by the use of implanted emitters, metal gates and inside nitride spacers. The poly filled cavities provided submicron contact to these regions. By decoupling the source-drain thermal budget from gate-stack formation, metal gates were realized.
|Journal||Materials Research Society Symposium - Proceedings|
|Publication status||Published - 1 Jan 2001|
|Event||Gate Stack and Silicide Issues in Silicon Processing 2000 - San Francisco, United States|
Duration: 25 Apr 2000 → 27 Apr 2000