A low-cost BiCMOS process with metal gates

H. W. Van Zeijl; L. K. Nanver

doi:10.1557/PROC-611-C7.2.1

A low-cost BiCMOS process with metal gates

H. W. Van Zeijl^*, L. K. Nanver

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › Academic › peer-review

3 Citations (Scopus)

Abstract

A low-complexity and low cost double-metal bipolar complementary metal oxide semiconductor (BiCMOS) process was proposed. Significant process simplification was achieved because the process flow contained steps common to both the bipolar and the CMOS device formation. Low complexity was assured by the use of implanted emitters, metal gates and inside nitride spacers. The poly filled cavities provided submicron contact to these regions. By decoupling the source-drain thermal budget from gate-stack formation, metal gates were realized.

Original language	English
Journal	Materials Research Society Symposium - Proceedings
Volume	611
DOIs	https://doi.org/10.1557/PROC-611-C7.2.1
Publication status	Published - 1 Jan 2001
Externally published	Yes
Event	Gate Stack and Silicide Issues in Silicon Processing 2000 - San Francisco, United States Duration: 25 Apr 2000 → 27 Apr 2000

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10.1557/PROC-611-C7.2.1

Cite this

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abstract = "A low-complexity and low cost double-metal bipolar complementary metal oxide semiconductor (BiCMOS) process was proposed. Significant process simplification was achieved because the process flow contained steps common to both the bipolar and the CMOS device formation. Low complexity was assured by the use of implanted emitters, metal gates and inside nitride spacers. The poly filled cavities provided submicron contact to these regions. By decoupling the source-drain thermal budget from gate-stack formation, metal gates were realized.",

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AU - Nanver, L. K.

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N2 - A low-complexity and low cost double-metal bipolar complementary metal oxide semiconductor (BiCMOS) process was proposed. Significant process simplification was achieved because the process flow contained steps common to both the bipolar and the CMOS device formation. Low complexity was assured by the use of implanted emitters, metal gates and inside nitride spacers. The poly filled cavities provided submicron contact to these regions. By decoupling the source-drain thermal budget from gate-stack formation, metal gates were realized.

AB - A low-complexity and low cost double-metal bipolar complementary metal oxide semiconductor (BiCMOS) process was proposed. Significant process simplification was achieved because the process flow contained steps common to both the bipolar and the CMOS device formation. Low complexity was assured by the use of implanted emitters, metal gates and inside nitride spacers. The poly filled cavities provided submicron contact to these regions. By decoupling the source-drain thermal budget from gate-stack formation, metal gates were realized.

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U2 - 10.1557/PROC-611-C7.2.1

DO - 10.1557/PROC-611-C7.2.1

M3 - Conference article

AN - SCOPUS:0035026425

SN - 0272-9172

VL - 611

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Gate Stack and Silicide Issues in Silicon Processing 2000

Y2 - 25 April 2000 through 27 April 2000

ER -

A low-cost BiCMOS process with metal gates

Abstract

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