A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios

Fabio Sebastiano; Lucien J. Breems; Kofi A.A. Makinwa; Salvatore Dargo; Salvatore Drago; Domine M.W. Leenaerts; Bram Nauta

doi:10.1109/JSSC.2009.2020247

A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios

Fabio Sebastiano, Lucien J. Breems, Kofi A.A. Makinwa, Salvatore Dargo, Salvatore Drago, Domine M.W. Leenaerts, Bram Nauta

Research output: Contribution to journal › Article › Academic › peer-review

74 Citations (Scopus)

90 Downloads (Pure)

Abstract

The design of a 100 kHz frequency reference based on the electron mobility in a MOS transistor is presented. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for application in wireless sensor networks (WSN). After a single-point calibration, the spread of its output frequency is less than 1.1% (3 ) over the temperature range from -22 C to 85 C. Fabricated in a baseline 65 nm CMOS technology, the frequency reference circuit occupies 0.11 mm蚠 and draws 34 A from a 1.2 V supply at room temperature.

Original language	English
Pages (from-to)	2002-2009
Number of pages	8
Journal	IEEE journal of solid-state circuits
Volume	44
Issue number	7
DOIs	https://doi.org/10.1109/JSSC.2009.2020247
Publication status	Published - 1 Jul 2009

Keywords

Relaxation oscillators
Wireless sensor networks
Low voltage
CMOS analog integrated circuits
Crystal-less clock
Ultra-low power
Charge carrier mobility

Access to Document

10.1109/JSSC.2009.2020247

Cite this

@article{c47701de61704c7997bcc55e496e8aa7,

title = "A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios",

abstract = "The design of a 100 kHz frequency reference based on the electron mobility in a MOS transistor is presented. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for application in wireless sensor networks (WSN). After a single-point calibration, the spread of its output frequency is less than 1.1% (3 ) over the temperature range from -22 C to 85 C. Fabricated in a baseline 65 nm CMOS technology, the frequency reference circuit occupies 0.11 mm蚠 and draws 34 A from a 1.2 V supply at room temperature.",

keywords = "Relaxation oscillators, Wireless sensor networks, Low voltage, CMOS analog integrated circuits, Crystal-less clock, Ultra-low power, Charge carrier mobility",

author = "Fabio Sebastiano and Breems, {Lucien J.} and Makinwa, {Kofi A.A.} and Salvatore Dargo and Salvatore Drago and Leenaerts, {Domine M.W.} and Bram Nauta",

year = "2009",

month = jul,

day = "1",

doi = "10.1109/JSSC.2009.2020247",

language = "English",

volume = "44",

pages = "2002--2009",

journal = "IEEE journal of solid-state circuits",

issn = "0018-9200",

publisher = "IEEE",

number = "7",

}

TY - JOUR

T1 - A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios

AU - Sebastiano, Fabio

AU - Breems, Lucien J.

AU - Makinwa, Kofi A.A.

AU - Dargo, Salvatore

AU - Drago, Salvatore

AU - Leenaerts, Domine M.W.

AU - Nauta, Bram

PY - 2009/7/1

Y1 - 2009/7/1

N2 - The design of a 100 kHz frequency reference based on the electron mobility in a MOS transistor is presented. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for application in wireless sensor networks (WSN). After a single-point calibration, the spread of its output frequency is less than 1.1% (3 ) over the temperature range from -22 C to 85 C. Fabricated in a baseline 65 nm CMOS technology, the frequency reference circuit occupies 0.11 mm蚠 and draws 34 A from a 1.2 V supply at room temperature.

AB - The design of a 100 kHz frequency reference based on the electron mobility in a MOS transistor is presented. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for application in wireless sensor networks (WSN). After a single-point calibration, the spread of its output frequency is less than 1.1% (3 ) over the temperature range from -22 C to 85 C. Fabricated in a baseline 65 nm CMOS technology, the frequency reference circuit occupies 0.11 mm蚠 and draws 34 A from a 1.2 V supply at room temperature.

KW - Relaxation oscillators

KW - Wireless sensor networks

KW - Low voltage

KW - CMOS analog integrated circuits

KW - Crystal-less clock

KW - Ultra-low power

KW - Charge carrier mobility

U2 - 10.1109/JSSC.2009.2020247

DO - 10.1109/JSSC.2009.2020247

M3 - Article

SN - 0018-9200

VL - 44

SP - 2002

EP - 2009

JO - IEEE journal of solid-state circuits

JF - IEEE journal of solid-state circuits

IS - 7

ER -

A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios

Abstract

Keywords

Access to Document

Fingerprint

Cite this