A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios

Fabio Sebastiano, Lucien Breems, Kofi Makinwa, S. Drago, Domine Leenaerts, Bram Nauta

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

9 Citations (Scopus)
53 Downloads (Pure)

Abstract

The design of a 100 kHz frequency reference based on the electron mobility in a MOS transistor is presented. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for Wireless Sensor Networks (WSN) applications. After one-point calibration the spread of its output frequency is less than 1.1% (3¾) over the temperature range from -22 ±C to 85 ±C. Fabricated in a baseline 65-nm CMOS technology, the frequency reference occupies 0.11 mm2 and draws 34 ¹A from a 1.2-V supply at room temperature.
Original languageEnglish
Title of host publicationProceedings of the 34th European Solid-State Circuits Conference, ESSCIRC 2008
Place of PublicationPiscataway
PublisherIEEE
Pages306-309
Number of pages4
ISBN (Print)978-1-4244-2362-0
DOIs
Publication statusPublished - 16 Sep 2008
Event34th European Solid-State Circuits Conference, ESSCIRC 2008 - Edinburgh, United Kingdom
Duration: 15 Sep 200819 Sep 2008
Conference number: 34

Conference

Conference34th European Solid-State Circuits Conference, ESSCIRC 2008
Abbreviated titleESSCIRC
CountryUnited Kingdom
CityEdinburgh
Period15/09/0819/09/08

Fingerprint

Radio receivers
Crystals
Electron mobility
Electric potential
MOSFET devices
Wireless sensor networks
Calibration
Temperature
Networks (circuits)

Keywords

  • EWI-14991
  • IR-65354
  • METIS-256147

Cite this

Sebastiano, F., Breems, L., Makinwa, K., Drago, S., Leenaerts, D., & Nauta, B. (2008). A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios. In Proceedings of the 34th European Solid-State Circuits Conference, ESSCIRC 2008 (pp. 306-309). Piscataway: IEEE. https://doi.org/10.1109/ESSCIRC.2008.4681853
Sebastiano, Fabio ; Breems, Lucien ; Makinwa, Kofi ; Drago, S. ; Leenaerts, Domine ; Nauta, Bram. / A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios. Proceedings of the 34th European Solid-State Circuits Conference, ESSCIRC 2008. Piscataway : IEEE, 2008. pp. 306-309
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title = "A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios",
abstract = "The design of a 100 kHz frequency reference based on the electron mobility in a MOS transistor is presented. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for Wireless Sensor Networks (WSN) applications. After one-point calibration the spread of its output frequency is less than 1.1{\%} (3¾) over the temperature range from -22 ±C to 85 ±C. Fabricated in a baseline 65-nm CMOS technology, the frequency reference occupies 0.11 mm2 and draws 34 ¹A from a 1.2-V supply at room temperature.",
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Sebastiano, F, Breems, L, Makinwa, K, Drago, S, Leenaerts, D & Nauta, B 2008, A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios. in Proceedings of the 34th European Solid-State Circuits Conference, ESSCIRC 2008. IEEE, Piscataway, pp. 306-309, 34th European Solid-State Circuits Conference, ESSCIRC 2008, Edinburgh, United Kingdom, 15/09/08. https://doi.org/10.1109/ESSCIRC.2008.4681853

A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios. / Sebastiano, Fabio; Breems, Lucien; Makinwa, Kofi; Drago, S.; Leenaerts, Domine; Nauta, Bram.

Proceedings of the 34th European Solid-State Circuits Conference, ESSCIRC 2008. Piscataway : IEEE, 2008. p. 306-309.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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N2 - The design of a 100 kHz frequency reference based on the electron mobility in a MOS transistor is presented. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for Wireless Sensor Networks (WSN) applications. After one-point calibration the spread of its output frequency is less than 1.1% (3¾) over the temperature range from -22 ±C to 85 ±C. Fabricated in a baseline 65-nm CMOS technology, the frequency reference occupies 0.11 mm2 and draws 34 ¹A from a 1.2-V supply at room temperature.

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Sebastiano F, Breems L, Makinwa K, Drago S, Leenaerts D, Nauta B. A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios. In Proceedings of the 34th European Solid-State Circuits Conference, ESSCIRC 2008. Piscataway: IEEE. 2008. p. 306-309 https://doi.org/10.1109/ESSCIRC.2008.4681853