A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios

Fabio Sebastiano; Lucien Breems; Kofi Makinwa; Salvatore Drago; Domine Leenaerts; Bram Nauta

doi:10.1109/ESSCIRC.2008.4681853

A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios

Fabio Sebastiano, Lucien Breems, Kofi Makinwa, Salvatore Drago, Domine Leenaerts, Bram Nauta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

12 Citations (Scopus)

60 Downloads (Pure)

Abstract

The design of a 100 kHz frequency reference based on the electron mobility in a MOS transistor is presented. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for Wireless Sensor Networks (WSN) applications. After one-point calibration the spread of its output frequency is less than 1.1% (3¾) over the temperature range from -22 ±C to 85 ±C. Fabricated in a baseline 65-nm CMOS technology, the frequency reference occupies 0.11 mm2 and draws 34 ¹A from a 1.2-V supply at room temperature.

Original language	English
Title of host publication	Proceedings of the 34th European Solid-State Circuits Conference, ESSCIRC 2008
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	306-309
Number of pages	4
ISBN (Electronic)	978-1-4244-2362-0
ISBN (Print)	978-1-4244-2361-3
DOIs	https://doi.org/10.1109/ESSCIRC.2008.4681853
Publication status	Published - 16 Sept 2008
Event	34th European Solid-State Circuits Conference, ESSCIRC 2008 - Edinburgh, United Kingdom Duration: 15 Sept 2008 → 19 Sept 2008 Conference number: 34

Conference

Conference	34th European Solid-State Circuits Conference, ESSCIRC 2008
Abbreviated title	ESSCIRC
Country/Territory	United Kingdom
City	Edinburgh
Period	15/09/08 → 19/09/08

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10.1109/ESSCIRC.2008.4681853

Cite this

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title = "A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios",

abstract = "The design of a 100 kHz frequency reference based on the electron mobility in a MOS transistor is presented. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for Wireless Sensor Networks (WSN) applications. After one-point calibration the spread of its output frequency is less than 1.1% (3¾) over the temperature range from -22 ±C to 85 ±C. Fabricated in a baseline 65-nm CMOS technology, the frequency reference occupies 0.11 mm2 and draws 34 ¹A from a 1.2-V supply at room temperature.",

author = "Fabio Sebastiano and Lucien Breems and Kofi Makinwa and Salvatore Drago and Domine Leenaerts and Bram Nauta",

year = "2008",

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language = "English",

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booktitle = "Proceedings of the 34th European Solid-State Circuits Conference, ESSCIRC 2008",

publisher = "IEEE",

address = "United States",

note = "34th European Solid-State Circuits Conference, ESSCIRC 2008, ESSCIRC ; Conference date: 15-09-2008 Through 19-09-2008",

}

Sebastiano, F, Breems, L, Makinwa, K, Drago, S, Leenaerts, D & Nauta, B 2008, A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios. in Proceedings of the 34th European Solid-State Circuits Conference, ESSCIRC 2008. IEEE, Piscataway, NJ, pp. 306-309, 34th European Solid-State Circuits Conference, ESSCIRC 2008, Edinburgh, United Kingdom, 15/09/08. https://doi.org/10.1109/ESSCIRC.2008.4681853

A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios. / Sebastiano, Fabio; Breems, Lucien; Makinwa, Kofi et al.
Proceedings of the 34th European Solid-State Circuits Conference, ESSCIRC 2008. Piscataway, NJ: IEEE, 2008. p. 306-309.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios

AU - Sebastiano, Fabio

AU - Breems, Lucien

AU - Makinwa, Kofi

AU - Drago, Salvatore

AU - Leenaerts, Domine

AU - Nauta, Bram

N1 - Conference code: 34

PY - 2008/9/16

Y1 - 2008/9/16

N2 - The design of a 100 kHz frequency reference based on the electron mobility in a MOS transistor is presented. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for Wireless Sensor Networks (WSN) applications. After one-point calibration the spread of its output frequency is less than 1.1% (3¾) over the temperature range from -22 ±C to 85 ±C. Fabricated in a baseline 65-nm CMOS technology, the frequency reference occupies 0.11 mm2 and draws 34 ¹A from a 1.2-V supply at room temperature.

AB - The design of a 100 kHz frequency reference based on the electron mobility in a MOS transistor is presented. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for Wireless Sensor Networks (WSN) applications. After one-point calibration the spread of its output frequency is less than 1.1% (3¾) over the temperature range from -22 ±C to 85 ±C. Fabricated in a baseline 65-nm CMOS technology, the frequency reference occupies 0.11 mm2 and draws 34 ¹A from a 1.2-V supply at room temperature.

U2 - 10.1109/ESSCIRC.2008.4681853

DO - 10.1109/ESSCIRC.2008.4681853

M3 - Conference contribution

SN - 978-1-4244-2361-3

SP - 306

EP - 309

BT - Proceedings of the 34th European Solid-State Circuits Conference, ESSCIRC 2008

PB - IEEE

CY - Piscataway, NJ

T2 - 34th European Solid-State Circuits Conference, ESSCIRC 2008

Y2 - 15 September 2008 through 19 September 2008

ER -

A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios

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