A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios

Fabio Sebastiano, Lucien Breems, Kofi Makinwa, Salvatore Drago, Domine Leenaerts, Bram Nauta

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    10 Citations (Scopus)
    56 Downloads (Pure)

    Abstract

    The design of a 100 kHz frequency reference based on the electron mobility in a MOS transistor is presented. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for Wireless Sensor Networks (WSN) applications. After one-point calibration the spread of its output frequency is less than 1.1% (3¾) over the temperature range from -22 ±C to 85 ±C. Fabricated in a baseline 65-nm CMOS technology, the frequency reference occupies 0.11 mm2 and draws 34 ¹A from a 1.2-V supply at room temperature.
    Original languageEnglish
    Title of host publicationProceedings of the 34th European Solid-State Circuits Conference, ESSCIRC 2008
    Place of PublicationPiscataway, NJ
    PublisherIEEE
    Pages306-309
    Number of pages4
    ISBN (Electronic)978-1-4244-2362-0
    ISBN (Print)978-1-4244-2361-3
    DOIs
    Publication statusPublished - 16 Sep 2008
    Event34th European Solid-State Circuits Conference, ESSCIRC 2008 - Edinburgh, United Kingdom
    Duration: 15 Sep 200819 Sep 2008
    Conference number: 34

    Conference

    Conference34th European Solid-State Circuits Conference, ESSCIRC 2008
    Abbreviated titleESSCIRC
    CountryUnited Kingdom
    CityEdinburgh
    Period15/09/0819/09/08

    Fingerprint Dive into the research topics of 'A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios'. Together they form a unique fingerprint.

  • Cite this

    Sebastiano, F., Breems, L., Makinwa, K., Drago, S., Leenaerts, D., & Nauta, B. (2008). A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios. In Proceedings of the 34th European Solid-State Circuits Conference, ESSCIRC 2008 (pp. 306-309). Piscataway, NJ: IEEE. https://doi.org/10.1109/ESSCIRC.2008.4681853