A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios

Fabio Sebastiano; Lucien J. Breems; Kofi A.A. Makinwa; Salvatore Dargo; Salvatore Drago; Domine M.W. Leenaerts; Bram Nauta

doi:10.1109/JSSC.2009.2020247

A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios

Fabio Sebastiano
, Lucien J. Breems
, Kofi A.A. Makinwa
, Salvatore Dargo
, Salvatore Drago
, Domine M.W. Leenaerts
, Bram Nauta

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

The design of a 100 kHz frequency reference based on the electron mobility in a MOS transistor is presented. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for application in wireless sensor networks (WSN). After a single-point calibration, the spread of its output frequency is less than 1.1% (3 ) over the temperature range from -22 C to 85 C. Fabricated in a baseline 65 nm CMOS technology, the frequency reference circuit occupies 0.11 mm蚠 and draws 34 A from a 1.2 V supply at room temperature.

Original language	English
Pages (from-to)	2002-2009
Number of pages	8
Journal	IEEE journal of solid-state circuits
Volume	44
Issue number	7
DOIs	https://doi.org/10.1109/JSSC.2009.2020247
Publication status	Published - 1 Jul 2009

Keywords

Relaxation oscillators
Wireless sensor networks
Low voltage
CMOS analog integrated circuits
Crystal-less clock
Ultra-low power
Charge carrier mobility

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10.1109/JSSC.2009.2020247

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title = "A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios",

abstract = "The design of a 100 kHz frequency reference based on the electron mobility in a MOS transistor is presented. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for application in wireless sensor networks (WSN). After a single-point calibration, the spread of its output frequency is less than 1.1\% (3 ) over the temperature range from -22 C to 85 C. Fabricated in a baseline 65 nm CMOS technology, the frequency reference circuit occupies 0.11 mm蚠 and draws 34 A from a 1.2 V supply at room temperature.",

keywords = "Relaxation oscillators, Wireless sensor networks, Low voltage, CMOS analog integrated circuits, Crystal-less clock, Ultra-low power, Charge carrier mobility",

author = "Fabio Sebastiano and Breems, \{Lucien J.\} and Makinwa, \{Kofi A.A.\} and Salvatore Dargo and Salvatore Drago and Leenaerts, \{Domine M.W.\} and Bram Nauta",

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AU - Sebastiano, Fabio

AU - Breems, Lucien J.

AU - Makinwa, Kofi A.A.

AU - Dargo, Salvatore

AU - Drago, Salvatore

AU - Leenaerts, Domine M.W.

AU - Nauta, Bram

PY - 2009/7/1

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N2 - The design of a 100 kHz frequency reference based on the electron mobility in a MOS transistor is presented. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for application in wireless sensor networks (WSN). After a single-point calibration, the spread of its output frequency is less than 1.1% (3 ) over the temperature range from -22 C to 85 C. Fabricated in a baseline 65 nm CMOS technology, the frequency reference circuit occupies 0.11 mm蚠 and draws 34 A from a 1.2 V supply at room temperature.

AB - The design of a 100 kHz frequency reference based on the electron mobility in a MOS transistor is presented. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for application in wireless sensor networks (WSN). After a single-point calibration, the spread of its output frequency is less than 1.1% (3 ) over the temperature range from -22 C to 85 C. Fabricated in a baseline 65 nm CMOS technology, the frequency reference circuit occupies 0.11 mm蚠 and draws 34 A from a 1.2 V supply at room temperature.

KW - Relaxation oscillators

KW - Wireless sensor networks

KW - Low voltage

KW - CMOS analog integrated circuits

KW - Crystal-less clock

KW - Ultra-low power

KW - Charge carrier mobility

U2 - 10.1109/JSSC.2009.2020247

DO - 10.1109/JSSC.2009.2020247

M3 - Article

SN - 0018-9200

VL - 44

SP - 2002

EP - 2009

JO - IEEE journal of solid-state circuits

JF - IEEE journal of solid-state circuits

IS - 7

ER -

A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios

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Keywords

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