A method for the measurement of the turn-on condition in MOS transistors

Hans Wallinga

Research output: Contribution to journalArticleAcademic

3 Citations (Scopus)
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Abstract

Metal-oxide-silicon (MOS) integrated circuits usually consist of MOS transistors and interconnections. Both, interconnections and MOS transistors are built up of diffused regions in the bulk substrate and conductive strips (metal or polycrystalline silicon) on top of the oxide. For proper electrical operation the interconnection paths should not exhibit MOS transistor effects, i.e. should not induce inversion layers at the silicon-silicon dioxide interface. Furthermore from a designer's point of view it will be desired that some transistors operate in the saturated mode and others in the non-saturated mode. This implies that a method for the determination of the turn-on of channel conduction is highly desirable for designers of MOS integrated circuits. Using a straightforward definition of turn-on, a fast and simple measurement method will be presented for the determination of the relation between gate voltage and diffused region voltage for MOST structures in the turn-on condition.
Original languageEnglish
Pages (from-to)1093-1098
JournalSolid-state electronics
Volume14
Issue number11
DOIs
Publication statusPublished - 1971

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silicon transistors
Silicon oxides
metal oxides
Transistors
Metals
silicon
integrated circuits
Integrated circuits
metal strips
Strip metal
Inversion layers
Electric potential
electric potential
Silicon
Polysilicon
Silicon Dioxide
Oxides
transistors
Silica
inversions

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Wallinga, Hans. / A method for the measurement of the turn-on condition in MOS transistors. In: Solid-state electronics. 1971 ; Vol. 14, No. 11. pp. 1093-1098.
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A method for the measurement of the turn-on condition in MOS transistors. / Wallinga, Hans.

In: Solid-state electronics, Vol. 14, No. 11, 1971, p. 1093-1098.

Research output: Contribution to journalArticleAcademic

TY - JOUR

T1 - A method for the measurement of the turn-on condition in MOS transistors

AU - Wallinga, Hans

PY - 1971

Y1 - 1971

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AB - Metal-oxide-silicon (MOS) integrated circuits usually consist of MOS transistors and interconnections. Both, interconnections and MOS transistors are built up of diffused regions in the bulk substrate and conductive strips (metal or polycrystalline silicon) on top of the oxide. For proper electrical operation the interconnection paths should not exhibit MOS transistor effects, i.e. should not induce inversion layers at the silicon-silicon dioxide interface. Furthermore from a designer's point of view it will be desired that some transistors operate in the saturated mode and others in the non-saturated mode. This implies that a method for the determination of the turn-on of channel conduction is highly desirable for designers of MOS integrated circuits. Using a straightforward definition of turn-on, a fast and simple measurement method will be presented for the determination of the relation between gate voltage and diffused region voltage for MOST structures in the turn-on condition.

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DO - 10.1016/0038-1101(71)90020-7

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