Skip to main navigation
Skip to search
Skip to main content
University of Twente Research Information Home
Home
Profiles
Research units
Projects
Research output
Datasets
Activities
Prizes
Press/Media
Search by expertise, name or affiliation
A method for the measurement of the turn-on condition in MOS transistors
Hans Wallinga
Research output
:
Contribution to journal
›
Article
›
Academic
3
Citations (Scopus)
210
Downloads (Pure)
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'A method for the measurement of the turn-on condition in MOS transistors'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Chemistry
Silicon
100%
Procedure
100%
Metal Oxide
100%
Voltage
25%
Silicon Dioxide
12%
Metal
12%
Oxide
12%
Inversion
12%
Measurement Method
12%
Structure
12%
Engineering
Measurement
100%
Interconnection
42%
Integrated Circuit
28%
Silicon Dioxide
14%
Polysilicon
14%
Substrates
14%
Electric Potential
14%
Gate Voltage
14%
Conductive
14%
Material Science
Transistor
100%
Metal Oxide
100%
Electronic Circuit
25%
Oxide
12%
Computer Science
Interconnection
75%
Integrated Circuit
50%
Inversion Layer
25%
Effect Transistor
25%
Channels
25%
Measurement Method
25%
Chemical Engineering
Silicon
16%
Oxide
16%
Polysilicon
16%