A micro-scale hot-surface device based on non-radiative carrier recombination

Alexeij Y. Kovalgin, J. Holleman, G. Iordache

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    2 Citations (Scopus)
    27 Downloads (Pure)

    Abstract

    This work employs the idea of making micro-scale hot-surface devices (e.g. sensors, flow meters, micro reactors, etc) based on generation of heat due to nonradiative recombination of carriers in a thin (13 nm) poly silicon surface layer. An important part of the device is a nano-scale (10-100 nm) conductive link created between two polysilicon electrodes separated by a dielectric (a capacitor-like structure). Using this approach, we designed and realized a new silicon device with the hot surface reduced to a sub-/spl mu/m-size area, operating at very low power down to sub-/spl mu/W. From the experiments, such a device can be used as a heat source as well as a sensitive detector of heat. In this paper, we describe the thermo-electrical properties of fabricated devices and demonstrate their feasibility to perform as gas- adsorption- desorption sensors operating at extremely low power consumption.
    Original languageEnglish
    Title of host publicationThe 34th European Solid-State Device Research conference, 2004
    Place of PublicationPiscataway
    PublisherIEEE Computer Society
    Pages353-356
    Number of pages4
    ISBN (Print)0780384784
    DOIs
    Publication statusPublished - 15 Nov 2004
    Event34th European Solid-State Device Research Conference, ESSDERC 2004 - Leuven, Belgium
    Duration: 21 Sep 200423 Sep 2004
    Conference number: 34

    Publication series

    Name
    PublisherIEEE

    Conference

    Conference34th European Solid-State Device Research Conference, ESSDERC 2004
    Abbreviated titleESSDERC
    CountryBelgium
    CityLeuven
    Period21/09/0423/09/04

    Fingerprint

    hot surfaces
    heat
    sensors
    silicon
    heat sources
    surface layers
    capacitors
    desorption
    electrical properties
    reactors
    adsorption
    electrodes
    detectors
    gases

    Keywords

    • METIS-218840
    • electron-hole recombination
    • heat measurement
    • EWI-15536
    • Elemental semiconductors
    • Gas sensors
    • IR-47870

    Cite this

    Kovalgin, A. Y., Holleman, J., & Iordache, G. (2004). A micro-scale hot-surface device based on non-radiative carrier recombination. In The 34th European Solid-State Device Research conference, 2004 (pp. 353-356). Piscataway: IEEE Computer Society. https://doi.org/10.1109/ESSDER.2004.1356562
    Kovalgin, Alexeij Y. ; Holleman, J. ; Iordache, G. / A micro-scale hot-surface device based on non-radiative carrier recombination. The 34th European Solid-State Device Research conference, 2004. Piscataway : IEEE Computer Society, 2004. pp. 353-356
    @inproceedings{d80b148d1e41414282fa5056c910ad0e,
    title = "A micro-scale hot-surface device based on non-radiative carrier recombination",
    abstract = "This work employs the idea of making micro-scale hot-surface devices (e.g. sensors, flow meters, micro reactors, etc) based on generation of heat due to nonradiative recombination of carriers in a thin (13 nm) poly silicon surface layer. An important part of the device is a nano-scale (10-100 nm) conductive link created between two polysilicon electrodes separated by a dielectric (a capacitor-like structure). Using this approach, we designed and realized a new silicon device with the hot surface reduced to a sub-/spl mu/m-size area, operating at very low power down to sub-/spl mu/W. From the experiments, such a device can be used as a heat source as well as a sensitive detector of heat. In this paper, we describe the thermo-electrical properties of fabricated devices and demonstrate their feasibility to perform as gas- adsorption- desorption sensors operating at extremely low power consumption.",
    keywords = "METIS-218840, electron-hole recombination, heat measurement, EWI-15536, Elemental semiconductors, Gas sensors, IR-47870",
    author = "Kovalgin, {Alexeij Y.} and J. Holleman and G. Iordache",
    year = "2004",
    month = "11",
    day = "15",
    doi = "10.1109/ESSDER.2004.1356562",
    language = "English",
    isbn = "0780384784",
    publisher = "IEEE Computer Society",
    pages = "353--356",
    booktitle = "The 34th European Solid-State Device Research conference, 2004",
    address = "United States",

    }

    Kovalgin, AY, Holleman, J & Iordache, G 2004, A micro-scale hot-surface device based on non-radiative carrier recombination. in The 34th European Solid-State Device Research conference, 2004. IEEE Computer Society, Piscataway, pp. 353-356, 34th European Solid-State Device Research Conference, ESSDERC 2004, Leuven, Belgium, 21/09/04. https://doi.org/10.1109/ESSDER.2004.1356562

    A micro-scale hot-surface device based on non-radiative carrier recombination. / Kovalgin, Alexeij Y.; Holleman, J.; Iordache, G.

    The 34th European Solid-State Device Research conference, 2004. Piscataway : IEEE Computer Society, 2004. p. 353-356.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    TY - GEN

    T1 - A micro-scale hot-surface device based on non-radiative carrier recombination

    AU - Kovalgin, Alexeij Y.

    AU - Holleman, J.

    AU - Iordache, G.

    PY - 2004/11/15

    Y1 - 2004/11/15

    N2 - This work employs the idea of making micro-scale hot-surface devices (e.g. sensors, flow meters, micro reactors, etc) based on generation of heat due to nonradiative recombination of carriers in a thin (13 nm) poly silicon surface layer. An important part of the device is a nano-scale (10-100 nm) conductive link created between two polysilicon electrodes separated by a dielectric (a capacitor-like structure). Using this approach, we designed and realized a new silicon device with the hot surface reduced to a sub-/spl mu/m-size area, operating at very low power down to sub-/spl mu/W. From the experiments, such a device can be used as a heat source as well as a sensitive detector of heat. In this paper, we describe the thermo-electrical properties of fabricated devices and demonstrate their feasibility to perform as gas- adsorption- desorption sensors operating at extremely low power consumption.

    AB - This work employs the idea of making micro-scale hot-surface devices (e.g. sensors, flow meters, micro reactors, etc) based on generation of heat due to nonradiative recombination of carriers in a thin (13 nm) poly silicon surface layer. An important part of the device is a nano-scale (10-100 nm) conductive link created between two polysilicon electrodes separated by a dielectric (a capacitor-like structure). Using this approach, we designed and realized a new silicon device with the hot surface reduced to a sub-/spl mu/m-size area, operating at very low power down to sub-/spl mu/W. From the experiments, such a device can be used as a heat source as well as a sensitive detector of heat. In this paper, we describe the thermo-electrical properties of fabricated devices and demonstrate their feasibility to perform as gas- adsorption- desorption sensors operating at extremely low power consumption.

    KW - METIS-218840

    KW - electron-hole recombination

    KW - heat measurement

    KW - EWI-15536

    KW - Elemental semiconductors

    KW - Gas sensors

    KW - IR-47870

    U2 - 10.1109/ESSDER.2004.1356562

    DO - 10.1109/ESSDER.2004.1356562

    M3 - Conference contribution

    SN - 0780384784

    SP - 353

    EP - 356

    BT - The 34th European Solid-State Device Research conference, 2004

    PB - IEEE Computer Society

    CY - Piscataway

    ER -

    Kovalgin AY, Holleman J, Iordache G. A micro-scale hot-surface device based on non-radiative carrier recombination. In The 34th European Solid-State Device Research conference, 2004. Piscataway: IEEE Computer Society. 2004. p. 353-356 https://doi.org/10.1109/ESSDER.2004.1356562