A micro-scale hot-surface device based on non-radiative carrier recombination

Alexeij Y. Kovalgin, J. Holleman, G. Iordache

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    3 Citations (Scopus)
    119 Downloads (Pure)


    This work employs the idea of making micro-scale hot-surface devices (e.g. sensors, flow meters, micro reactors, etc) based on generation of heat due to nonradiative recombination of carriers in a thin (13 nm) poly silicon surface layer. An important part of the device is a nano-scale (10-100 nm) conductive link created between two polysilicon electrodes separated by a dielectric (a capacitor-like structure). Using this approach, we designed and realized a new silicon device with the hot surface reduced to a sub-/spl mu/m-size area, operating at very low power down to sub-/spl mu/W. From the experiments, such a device can be used as a heat source as well as a sensitive detector of heat. In this paper, we describe the thermo-electrical properties of fabricated devices and demonstrate their feasibility to perform as gas- adsorption- desorption sensors operating at extremely low power consumption.
    Original languageEnglish
    Title of host publicationThe 34th European Solid-State Device Research conference, 2004
    Place of PublicationPiscataway
    Number of pages4
    ISBN (Print)0780384784
    Publication statusPublished - 15 Nov 2004
    Event34th European Solid-State Device Research Conference, ESSDERC 2004 - Leuven, Belgium
    Duration: 21 Sept 200423 Sept 2004
    Conference number: 34

    Publication series



    Conference34th European Solid-State Device Research Conference, ESSDERC 2004
    Abbreviated titleESSDERC


    • METIS-218840
    • electron-hole recombination
    • heat measurement
    • EWI-15536
    • Elemental semiconductors
    • Gas sensors
    • IR-47870

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