A monte carlo study of dislocation growth and etching of crystals

H.M. Cuppen, E. van Veenendaal, J. van Suchtelen, W.J.P. van Enckevort*, E. Vlieg

*Corresponding author for this work

    Research output: Contribution to journalArticleAcademicpeer-review

    23 Citations (Scopus)
    1 Downloads (Pure)

    Abstract

    It is well known that screw dislocations are step sources that allow crystals to grow at low driving forces. Growth is accelerated at the outcrop of a screw dislocation generating a spiral hillock. This makes the intersection of a screw dislocation and a crystal surface a so-called velocity source. In this paper the interaction between dislocation growth, 2D-nucleation and misorientation step flow is investigated for a wide range of driving forces by means of Monte Carlo simulations of growth of the Kossel (1 0 0) surface. The interactions between the different growth mechanisms are shown to agree with a general model for velocity source behavior, which allows for a simple analytical expression of the growth rate. This expression can be used in a continuum description of crystal growth. Finally, dislocation etching is studied and compared with dislocation growth.
    Original languageEnglish
    Pages (from-to)165-175
    JournalJournal of crystal growth
    Volume219
    Issue number1-2
    DOIs
    Publication statusPublished - 2000

    Keywords

    • Monte Carlo Simulation
    • Crystal growth and etching
    • Screw dislocation

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