A Monte Carlo study of etching in the presence of a mask junction

E. van Veenendaal, H.M. Cuppen, W.J.P. van Enckevort, J. van Suchtelen, A.J. Nijdam, Michael Curt Elwenspoek, E. Vlieg

    Research output: Contribution to journalArticleAcademicpeer-review

    9 Citations (Scopus)

    Abstract

    Anisotropic wet chemical etching of silicon in alkaline solutions is a key technology in the fabrication of sensors and actuators. In this technology etching through masks is used for fast and reproducible shaping of micromechanical structures. Experimentally it has been found that near the junction between a slowly etching Si(111) surface and a mask, etching can be influenced by etch pit nucleation at this junction. In this paper the influence of the presence of such a junction on the etch rate and the surface topology is investigated by means of Monte Carlo simulations of etching of the Kossel (100) surface. To describe such a system only two parameters are needed: one parameter that describes the interaction between two bulk atoms and one parameter that describes the interaction between the mask and an adjacent atom. If the latter interaction is significantly smaller than the first, the nucleation rate at the mask junction is higher than throughout the crystal surface, which induces the formation of a stepped facet at the junction, which grows in time. An analytical expression for the misorientation of this facet is derived that agrees with the Monte Carlo simulations. The misorientation depends only on the interaction between the interface and the mask. The Si(111) surface is more complicated than the Kossel (100) surface. Underetching experiments have shown that a stepped facet is only formed for an obtuse contact angle of the Si(111) surface with the mask. This can be explained by comparing the topology of the mask junction for an obtuse and an acute contact angle.
    Original languageUndefined
    Pages (from-to)409-415
    Number of pages7
    JournalJournal of micromechanics and microengineering
    Volume11
    Issue number4
    DOIs
    Publication statusPublished - Jul 2001

    Keywords

    • EWI-12882
    • IR-42351
    • METIS-201136

    Cite this

    van Veenendaal, E., Cuppen, H. M., van Enckevort, W. J. P., van Suchtelen, J., Nijdam, A. J., Elwenspoek, M. C., & Vlieg, E. (2001). A Monte Carlo study of etching in the presence of a mask junction. Journal of micromechanics and microengineering, 11(4), 409-415. https://doi.org/10.1088/0960-1317/11/4/322
    van Veenendaal, E. ; Cuppen, H.M. ; van Enckevort, W.J.P. ; van Suchtelen, J. ; Nijdam, A.J. ; Elwenspoek, Michael Curt ; Vlieg, E. / A Monte Carlo study of etching in the presence of a mask junction. In: Journal of micromechanics and microengineering. 2001 ; Vol. 11, No. 4. pp. 409-415.
    @article{0f1f4010586e403ab31e8dbc4022ce0a,
    title = "A Monte Carlo study of etching in the presence of a mask junction",
    abstract = "Anisotropic wet chemical etching of silicon in alkaline solutions is a key technology in the fabrication of sensors and actuators. In this technology etching through masks is used for fast and reproducible shaping of micromechanical structures. Experimentally it has been found that near the junction between a slowly etching Si(111) surface and a mask, etching can be influenced by etch pit nucleation at this junction. In this paper the influence of the presence of such a junction on the etch rate and the surface topology is investigated by means of Monte Carlo simulations of etching of the Kossel (100) surface. To describe such a system only two parameters are needed: one parameter that describes the interaction between two bulk atoms and one parameter that describes the interaction between the mask and an adjacent atom. If the latter interaction is significantly smaller than the first, the nucleation rate at the mask junction is higher than throughout the crystal surface, which induces the formation of a stepped facet at the junction, which grows in time. An analytical expression for the misorientation of this facet is derived that agrees with the Monte Carlo simulations. The misorientation depends only on the interaction between the interface and the mask. The Si(111) surface is more complicated than the Kossel (100) surface. Underetching experiments have shown that a stepped facet is only formed for an obtuse contact angle of the Si(111) surface with the mask. This can be explained by comparing the topology of the mask junction for an obtuse and an acute contact angle.",
    keywords = "EWI-12882, IR-42351, METIS-201136",
    author = "{van Veenendaal}, E. and H.M. Cuppen and {van Enckevort}, W.J.P. and {van Suchtelen}, J. and A.J. Nijdam and Elwenspoek, {Michael Curt} and E. Vlieg",
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    van Veenendaal, E, Cuppen, HM, van Enckevort, WJP, van Suchtelen, J, Nijdam, AJ, Elwenspoek, MC & Vlieg, E 2001, 'A Monte Carlo study of etching in the presence of a mask junction', Journal of micromechanics and microengineering, vol. 11, no. 4, pp. 409-415. https://doi.org/10.1088/0960-1317/11/4/322

    A Monte Carlo study of etching in the presence of a mask junction. / van Veenendaal, E.; Cuppen, H.M.; van Enckevort, W.J.P.; van Suchtelen, J.; Nijdam, A.J.; Elwenspoek, Michael Curt; Vlieg, E.

    In: Journal of micromechanics and microengineering, Vol. 11, No. 4, 07.2001, p. 409-415.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - A Monte Carlo study of etching in the presence of a mask junction

    AU - van Veenendaal, E.

    AU - Cuppen, H.M.

    AU - van Enckevort, W.J.P.

    AU - van Suchtelen, J.

    AU - Nijdam, A.J.

    AU - Elwenspoek, Michael Curt

    AU - Vlieg, E.

    PY - 2001/7

    Y1 - 2001/7

    N2 - Anisotropic wet chemical etching of silicon in alkaline solutions is a key technology in the fabrication of sensors and actuators. In this technology etching through masks is used for fast and reproducible shaping of micromechanical structures. Experimentally it has been found that near the junction between a slowly etching Si(111) surface and a mask, etching can be influenced by etch pit nucleation at this junction. In this paper the influence of the presence of such a junction on the etch rate and the surface topology is investigated by means of Monte Carlo simulations of etching of the Kossel (100) surface. To describe such a system only two parameters are needed: one parameter that describes the interaction between two bulk atoms and one parameter that describes the interaction between the mask and an adjacent atom. If the latter interaction is significantly smaller than the first, the nucleation rate at the mask junction is higher than throughout the crystal surface, which induces the formation of a stepped facet at the junction, which grows in time. An analytical expression for the misorientation of this facet is derived that agrees with the Monte Carlo simulations. The misorientation depends only on the interaction between the interface and the mask. The Si(111) surface is more complicated than the Kossel (100) surface. Underetching experiments have shown that a stepped facet is only formed for an obtuse contact angle of the Si(111) surface with the mask. This can be explained by comparing the topology of the mask junction for an obtuse and an acute contact angle.

    AB - Anisotropic wet chemical etching of silicon in alkaline solutions is a key technology in the fabrication of sensors and actuators. In this technology etching through masks is used for fast and reproducible shaping of micromechanical structures. Experimentally it has been found that near the junction between a slowly etching Si(111) surface and a mask, etching can be influenced by etch pit nucleation at this junction. In this paper the influence of the presence of such a junction on the etch rate and the surface topology is investigated by means of Monte Carlo simulations of etching of the Kossel (100) surface. To describe such a system only two parameters are needed: one parameter that describes the interaction between two bulk atoms and one parameter that describes the interaction between the mask and an adjacent atom. If the latter interaction is significantly smaller than the first, the nucleation rate at the mask junction is higher than throughout the crystal surface, which induces the formation of a stepped facet at the junction, which grows in time. An analytical expression for the misorientation of this facet is derived that agrees with the Monte Carlo simulations. The misorientation depends only on the interaction between the interface and the mask. The Si(111) surface is more complicated than the Kossel (100) surface. Underetching experiments have shown that a stepped facet is only formed for an obtuse contact angle of the Si(111) surface with the mask. This can be explained by comparing the topology of the mask junction for an obtuse and an acute contact angle.

    KW - EWI-12882

    KW - IR-42351

    KW - METIS-201136

    U2 - 10.1088/0960-1317/11/4/322

    DO - 10.1088/0960-1317/11/4/322

    M3 - Article

    VL - 11

    SP - 409

    EP - 415

    JO - Journal of micromechanics and microengineering

    JF - Journal of micromechanics and microengineering

    SN - 0960-1317

    IS - 4

    ER -

    van Veenendaal E, Cuppen HM, van Enckevort WJP, van Suchtelen J, Nijdam AJ, Elwenspoek MC et al. A Monte Carlo study of etching in the presence of a mask junction. Journal of micromechanics and microengineering. 2001 Jul;11(4):409-415. https://doi.org/10.1088/0960-1317/11/4/322