A new design of an Electrochemical (bio)sensor: High Aspect Ratio Fin-FET

Serena Rollo

Research output: ThesisPhD Thesis - Research UT, graduation UTAcademic

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Abstract

Considering the global picture of biosensing, in this work we propose a new FET design with a fin geometry with high aspect ratio for which we optimised the fabrication protocol resulting in reproducible devices with widths ranging from 100 nm to few micrometres. The developed configuration addresses the problems of nano sensors of signal to noise ratio, and reproducibility to fabrication and functionalization, without compromising much on the sensitivity and time of response in diffusion limited assays. The particular geometry of the FET channel also benefits of an intrinsic improved linearity of the transduction with concentration when the linearity does not come from the dielectric used as sensing layer, enabling wider dynamic range for the measurements. Integration with high dielectric constant materials addresses the problem of chemical stability into the fluid environment and influences the transconductance through an enhancement of the capacitive effect.
Original languageEnglish
QualificationDoctor of Philosophy
Awarding Institution
  • University of Twente
Supervisors/Advisors
  • Olthuis, Wouter , Supervisor
  • van den Berg, Albert , Supervisor
Award date22 Nov 2019
Place of PublicationEnschede
Publisher
Print ISBNs978-90-365-4863-2
DOIs
Publication statusPublished - 22 Nov 2019

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Field effect transistors
Aspect ratio
Fabrication
Geometry
Chemical stability
Sensors
Transconductance
Assays
Signal to noise ratio
Permittivity
Fluids

Cite this

Rollo, Serena . / A new design of an Electrochemical (bio)sensor : High Aspect Ratio Fin-FET. Enschede : University of Twente, 2019. 146 p.
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A new design of an Electrochemical (bio)sensor : High Aspect Ratio Fin-FET. / Rollo, Serena .

Enschede : University of Twente, 2019. 146 p.

Research output: ThesisPhD Thesis - Research UT, graduation UTAcademic

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T1 - A new design of an Electrochemical (bio)sensor

T2 - High Aspect Ratio Fin-FET

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N2 - Considering the global picture of biosensing, in this work we propose a new FET design with a fin geometry with high aspect ratio for which we optimised the fabrication protocol resulting in reproducible devices with widths ranging from 100 nm to few micrometres. The developed configuration addresses the problems of nano sensors of signal to noise ratio, and reproducibility to fabrication and functionalization, without compromising much on the sensitivity and time of response in diffusion limited assays. The particular geometry of the FET channel also benefits of an intrinsic improved linearity of the transduction with concentration when the linearity does not come from the dielectric used as sensing layer, enabling wider dynamic range for the measurements. Integration with high dielectric constant materials addresses the problem of chemical stability into the fluid environment and influences the transconductance through an enhancement of the capacitive effect.

AB - Considering the global picture of biosensing, in this work we propose a new FET design with a fin geometry with high aspect ratio for which we optimised the fabrication protocol resulting in reproducible devices with widths ranging from 100 nm to few micrometres. The developed configuration addresses the problems of nano sensors of signal to noise ratio, and reproducibility to fabrication and functionalization, without compromising much on the sensitivity and time of response in diffusion limited assays. The particular geometry of the FET channel also benefits of an intrinsic improved linearity of the transduction with concentration when the linearity does not come from the dielectric used as sensing layer, enabling wider dynamic range for the measurements. Integration with high dielectric constant materials addresses the problem of chemical stability into the fluid environment and influences the transconductance through an enhancement of the capacitive effect.

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DO - 10.3990/1.9789036548632

M3 - PhD Thesis - Research UT, graduation UT

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