A new extraction technique for the series resistances of semiconductor devices based on the intrinsic properties of bias-dependent y-parameters

V. Cuoco; W. C.E. Neo; L. C.N. De Vreede; H. C. De Graaff; L. K. Nanver; K. Buisman; H. C. Wu; H. F.F. Jos; J. N. Burghartz

doi:10.1109/BIPOL.2004.1365766

A new extraction technique for the series resistances of semiconductor devices based on the intrinsic properties of bias-dependent y-parameters

V. Cuoco^*, W. C.E. Neo, L. C.N. De Vreede, H. C. De Graaff, L. K. Nanver, K. Buisman, H. C. Wu, H. F.F. Jos, J. N. Burghartz

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

Abstract

This paper presents an approach for the extraction of the series parasitics of semiconductor devices. The approach is based on the inherently different bias dependent behavior of y-parameters for a device with series parasitics compared to a device without series parasitics. The principles of this new method are verified analytically as well in simulations using the ADS' Gummel-Poon model. In conclusion we have applied the proposed extraction method on measured data of DIMES-03 bipolar transistors of different sizes.

Original language	English
Title of host publication	Proceedings of the 2004 Meeting Bipolar/BiCMOS Circuits and Technology, 2004
Pages	148-151
Number of pages	4
DOIs	https://doi.org/10.1109/BIPOL.2004.1365766
Publication status	Published - 1 Dec 2004
Externally published	Yes
Event	2004 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - Montreal, Canada Duration: 13 Sept 2004 → 14 Sept 2004

Conference

Conference	2004 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Abbreviated title	BCTM 2004
Country/Territory	Canada
City	Montreal
Period	13/09/04 → 14/09/04

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10.1109/BIPOL.2004.1365766

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Cuoco, V., Neo, W. C. E., De Vreede, L. C. N., De Graaff, H. C., Nanver, L. K., Buisman, K., Wu, H. C., Jos, H. F. F., & Burghartz, J. N. (2004). A new extraction technique for the series resistances of semiconductor devices based on the intrinsic properties of bias-dependent y-parameters. In Proceedings of the 2004 Meeting Bipolar/BiCMOS Circuits and Technology, 2004 (pp. 148-151) https://doi.org/10.1109/BIPOL.2004.1365766

@inproceedings{e20b8d59ca5246189c7b52e6155f16f5,

title = "A new extraction technique for the series resistances of semiconductor devices based on the intrinsic properties of bias-dependent y-parameters",

abstract = "This paper presents an approach for the extraction of the series parasitics of semiconductor devices. The approach is based on the inherently different bias dependent behavior of y-parameters for a device with series parasitics compared to a device without series parasitics. The principles of this new method are verified analytically as well in simulations using the ADS' Gummel-Poon model. In conclusion we have applied the proposed extraction method on measured data of DIMES-03 bipolar transistors of different sizes.",

author = "V. Cuoco and Neo, {W. C.E.} and {De Vreede}, {L. C.N.} and {De Graaff}, {H. C.} and Nanver, {L. K.} and K. Buisman and Wu, {H. C.} and Jos, {H. F.F.} and Burghartz, {J. N.}",

year = "2004",

month = dec,

day = "1",

doi = "10.1109/BIPOL.2004.1365766",

language = "English",

isbn = "0-7803-8618-3",

pages = "148--151",

booktitle = "Proceedings of the 2004 Meeting Bipolar/BiCMOS Circuits and Technology, 2004",

note = "2004 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2004 ; Conference date: 13-09-2004 Through 14-09-2004",

}

Cuoco, V, Neo, WCE, De Vreede, LCN, De Graaff, HC, Nanver, LK, Buisman, K, Wu, HC, Jos, HFF & Burghartz, JN 2004, A new extraction technique for the series resistances of semiconductor devices based on the intrinsic properties of bias-dependent y-parameters. in Proceedings of the 2004 Meeting Bipolar/BiCMOS Circuits and Technology, 2004. pp. 148-151, 2004 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Montreal, Quebec, Canada, 13/09/04. https://doi.org/10.1109/BIPOL.2004.1365766

A new extraction technique for the series resistances of semiconductor devices based on the intrinsic properties of bias-dependent y-parameters. / Cuoco, V.; Neo, W. C.E.; De Vreede, L. C.N. et al.
Proceedings of the 2004 Meeting Bipolar/BiCMOS Circuits and Technology, 2004. 2004. p. 148-151.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - A new extraction technique for the series resistances of semiconductor devices based on the intrinsic properties of bias-dependent y-parameters

AU - Cuoco, V.

AU - Neo, W. C.E.

AU - De Vreede, L. C.N.

AU - De Graaff, H. C.

AU - Nanver, L. K.

AU - Buisman, K.

AU - Wu, H. C.

AU - Jos, H. F.F.

AU - Burghartz, J. N.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - This paper presents an approach for the extraction of the series parasitics of semiconductor devices. The approach is based on the inherently different bias dependent behavior of y-parameters for a device with series parasitics compared to a device without series parasitics. The principles of this new method are verified analytically as well in simulations using the ADS' Gummel-Poon model. In conclusion we have applied the proposed extraction method on measured data of DIMES-03 bipolar transistors of different sizes.

AB - This paper presents an approach for the extraction of the series parasitics of semiconductor devices. The approach is based on the inherently different bias dependent behavior of y-parameters for a device with series parasitics compared to a device without series parasitics. The principles of this new method are verified analytically as well in simulations using the ADS' Gummel-Poon model. In conclusion we have applied the proposed extraction method on measured data of DIMES-03 bipolar transistors of different sizes.

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U2 - 10.1109/BIPOL.2004.1365766

DO - 10.1109/BIPOL.2004.1365766

M3 - Conference contribution

AN - SCOPUS:17044400234

SN - 0-7803-8618-3

SP - 148

EP - 151

BT - Proceedings of the 2004 Meeting Bipolar/BiCMOS Circuits and Technology, 2004

T2 - 2004 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Y2 - 13 September 2004 through 14 September 2004

ER -

A new extraction technique for the series resistances of semiconductor devices based on the intrinsic properties of bias-dependent y-parameters

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