A new extraction technique for the series resistances of semiconductor devices based on the intrinsic properties of bias-dependent y-parameters

V. Cuoco*, W. C.E. Neo, L. C.N. De Vreede, H. C. De Graaff, L. K. Nanver, K. Buisman, H. C. Wu, H. F.F. Jos, J. N. Burghartz

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)


This paper presents an approach for the extraction of the series parasitics of semiconductor devices. The approach is based on the inherently different bias dependent behavior of y-parameters for a device with series parasitics compared to a device without series parasitics. The principles of this new method are verified analytically as well in simulations using the ADS' Gummel-Poon model. In conclusion we have applied the proposed extraction method on measured data of DIMES-03 bipolar transistors of different sizes.

Original languageEnglish
Title of host publicationProceedings of the 2004 Meeting Bipolar/BiCMOS Circuits and Technology, 2004
Number of pages4
Publication statusPublished - 1 Dec 2004
Externally publishedYes
Event2004 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - Montreal, Canada
Duration: 13 Sept 200414 Sept 2004


Conference2004 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Abbreviated titleBCTM 2004

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