A new extraction technique for the series resistances of semiconductor devices based on the intrinsic properties of bias-dependent y-parameters

V. Cuoco*, W. C.E. Neo, L. C.N. De Vreede, H. C. De Graaff, L. K. Nanver, K. Buisman, H. C. Wu, H. F.F. Jos, J. N. Burghartz

*Corresponding author for this work

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Engineering & Materials Science