A new model for the backscatter coefficient in nanoscale MOSFETs

J.P.J. van der Steen; P. Palestri; D. Esseni; Raymond Josephus Engelbart Hueting

doi:10.1109/ESSDERC.2010.5618380

A new model for the backscatter coefficient in nanoscale MOSFETs

J.P.J. van der Steen, P. Palestri, D. Esseni, Raymond Josephus Engelbart Hueting

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

4 Citations (Scopus)

138 Downloads (Pure)

Abstract

In this work, we present a new model for the backscatter coefficient in nanoscale MOSFETs. The model assumes that only few backscattering events occur, which is likely to hold for devices with channel length in the order of the carrier mean free path. Both elastic and inelastic scattering mechanisms are accounted for. Moreover, the model naturally captures the effect of degeneracy. The model is compared with Monte–Carlo simulations for a broad range of channel lengths, temperatures, and electric fields, obtaining in general a very good agreement.

Original language	Undefined
Title of host publication	Proceedings of the 40th European Solid-State Device Research, Essderc 2010
Place of Publication	USA
Publisher	IEEE
Pages	234-237
Number of pages	4
ISBN (Print)	978-1-4244-6660-3
DOIs	https://doi.org/10.1109/ESSDERC.2010.5618380
Publication status	Published - 13 Sept 2010
Event	40th European Solid State Device Research Conference, ESSDERC 2010 - Hotel Barcelo Renacimiento, Sevilla, Spain Duration: 13 Sept 2010 → 17 Sept 2010 Conference number: 40

Publication series

Name
Publisher	IEEE Solid-State Circuits Society

Conference

Conference	40th European Solid State Device Research Conference, ESSDERC 2010
Abbreviated title	ESSDERC
Country/Territory	Spain
City	Sevilla
Period	13/09/10 → 17/09/10

Keywords

METIS-276096
EWI-18465
SC-DPM: Device Physics and Modeling
IR-75630

Access to Document

10.1109/ESSDERC.2010.5618380

Cite this

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title = "A new model for the backscatter coefficient in nanoscale MOSFETs",

abstract = "In this work, we present a new model for the backscatter coefficient in nanoscale MOSFETs. The model assumes that only few backscattering events occur, which is likely to hold for devices with channel length in the order of the carrier mean free path. Both elastic and inelastic scattering mechanisms are accounted for. Moreover, the model naturally captures the effect of degeneracy. The model is compared with Monte–Carlo simulations for a broad range of channel lengths, temperatures, and electric fields, obtaining in general a very good agreement.",

keywords = "METIS-276096, EWI-18465, SC-DPM: Device Physics and Modeling, IR-75630",

author = "{van der Steen}, J.P.J. and P. Palestri and D. Esseni and Hueting, {Raymond Josephus Engelbart}",

note = "10.1109/ESSDERC.2010.5618380 ; 40th European Solid State Device Research Conference, ESSDERC 2010 ; Conference date: 13-09-2010 Through 17-09-2010",

year = "2010",

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doi = "10.1109/ESSDERC.2010.5618380",

language = "Undefined",

isbn = "978-1-4244-6660-3",

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booktitle = "Proceedings of the 40th European Solid-State Device Research, Essderc 2010",

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van der Steen, JPJ, Palestri, P, Esseni, D & Hueting, RJE 2010, A new model for the backscatter coefficient in nanoscale MOSFETs. in Proceedings of the 40th European Solid-State Device Research, Essderc 2010. IEEE, USA, pp. 234-237, 40th European Solid State Device Research Conference, ESSDERC 2010, Sevilla, Spain, 13/09/10. https://doi.org/10.1109/ESSDERC.2010.5618380

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AU - van der Steen, J.P.J.

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AU - Esseni, D.

AU - Hueting, Raymond Josephus Engelbart

N1 - Conference code: 40

PY - 2010/9/13

Y1 - 2010/9/13

N2 - In this work, we present a new model for the backscatter coefficient in nanoscale MOSFETs. The model assumes that only few backscattering events occur, which is likely to hold for devices with channel length in the order of the carrier mean free path. Both elastic and inelastic scattering mechanisms are accounted for. Moreover, the model naturally captures the effect of degeneracy. The model is compared with Monte–Carlo simulations for a broad range of channel lengths, temperatures, and electric fields, obtaining in general a very good agreement.

AB - In this work, we present a new model for the backscatter coefficient in nanoscale MOSFETs. The model assumes that only few backscattering events occur, which is likely to hold for devices with channel length in the order of the carrier mean free path. Both elastic and inelastic scattering mechanisms are accounted for. Moreover, the model naturally captures the effect of degeneracy. The model is compared with Monte–Carlo simulations for a broad range of channel lengths, temperatures, and electric fields, obtaining in general a very good agreement.

KW - METIS-276096

KW - EWI-18465

KW - SC-DPM: Device Physics and Modeling

KW - IR-75630

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