A new model for the backscatter coefficient in nanoscale MOSFETs

J.P.J. van der Steen, P. Palestri, D. Esseni, Raymond Josephus Engelbart Hueting

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    59 Downloads (Pure)

    Abstract

    In this work, we present a new model for the backscatter coefficient in nanoscale MOSFETs. The model assumes that only few backscattering events occur, which is likely to hold for devices with channel length in the order of the carrier mean free path. Both elastic and inelastic scattering mechanisms are accounted for. Moreover, the model naturally captures the effect of degeneracy. The model is compared with Monte–Carlo simulations for a broad range of channel lengths, temperatures, and electric fields, obtaining in general a very good agreement.
    Original languageUndefined
    Title of host publicationProceedings of the 40th European Solid-State Device Research, Essderc 2010
    Place of PublicationUSA
    PublisherIEEE Solid-State Circuits Society
    Pages234-237
    Number of pages4
    ISBN (Print)978-1-4244-6660-3
    DOIs
    Publication statusPublished - 13 Sep 2010
    Event40th European Solid State Device Research Conference, ESSDERC 2010 - Hotel Barcelo Renacimiento, Sevilla, Spain
    Duration: 13 Sep 201017 Sep 2010
    Conference number: 40

    Publication series

    Name
    PublisherIEEE Solid-State Circuits Society

    Conference

    Conference40th European Solid State Device Research Conference, ESSDERC 2010
    Abbreviated titleESSDERC
    CountrySpain
    CitySevilla
    Period13/09/1017/09/10

    Keywords

    • METIS-276096
    • EWI-18465
    • SC-DPM: Device Physics and Modeling
    • IR-75630

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