A new SiC power module assembly based on silver sintering bonding

Lisheng Wang; Zhouqiao Lei; Ruizhi Liang; Gert Rietveld; Raymond J.E. Hueting

doi:10.23919/EPE23ECCEEurope58414.2023.10264386

A new SiC power module assembly based on silver sintering bonding

Lisheng Wang^*, Zhouqiao Lei, Ruizhi Liang, Gert Rietveld, Raymond J.E. Hueting

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

45 Downloads (Pure)

Abstract

Driven by the need for more reliable die and substrate attachment in wide band gap power electronics, a new bonding process scheme of silver (Ag) sintering of large interfaces has been developed for silicon-carbide power MOSFETs, where the devices are placed before pre-drying (or pre-heating) the sintering Ag paste. Using the new wet placement process, a maximum shear strength (76 MPa) and minimum void fraction (0.02 %) can be achieved provided that the pre-heating temperature is 80 °C and the power devices are well positioned by a specially developed vacuum-assisted fixture. Applied on an STPak sub-module power device, it still showed full functionality after sintering at 230 °C, 15 MPa and 10 mins.

Original language	English
Title of host publication	2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe
Publisher	IEEE
ISBN (Electronic)	9789075815412
DOIs	https://doi.org/10.23919/EPE23ECCEEurope58414.2023.10264386
Publication status	Published - 2 Oct 2023
Event	25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe - Aalborg, Denmark Duration: 4 Sept 2023 → 8 Sept 2023 Conference number: 25

Conference

Conference	25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe
Abbreviated title	EPE 2023 ECCE Europe
Country/Territory	Denmark
City	Aalborg
Period	4/09/23 → 8/09/23

Keywords

2024 OA procedure
Power module
SiC MOSFET
Silver sintering
Wet placement
Packaging

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10.23919/EPE23ECCEEurope58414.2023.10264386

A_new_SiC_power_module_assembly_based_on_silver_sintering_bondingFinal published version, 4.67 MBLicence: Taverne

Cite this

@inproceedings{02fdc0f2b4ae4271bdee1f35858c3375,

title = "A new SiC power module assembly based on silver sintering bonding",

abstract = "Driven by the need for more reliable die and substrate attachment in wide band gap power electronics, a new bonding process scheme of silver (Ag) sintering of large interfaces has been developed for silicon-carbide power MOSFETs, where the devices are placed before pre-drying (or pre-heating) the sintering Ag paste. Using the new wet placement process, a maximum shear strength (76 MPa) and minimum void fraction (0.02 %) can be achieved provided that the pre-heating temperature is 80 °C and the power devices are well positioned by a specially developed vacuum-assisted fixture. Applied on an STPak sub-module power device, it still showed full functionality after sintering at 230 °C, 15 MPa and 10 mins.",

keywords = "2024 OA procedure, Power module, SiC MOSFET, Silver sintering, Wet placement, Packaging",

author = "Lisheng Wang and Zhouqiao Lei and Ruizhi Liang and Gert Rietveld and Hueting, {Raymond J.E.}",

note = "Publisher Copyright: {\textcopyright} 2023 EPE Association.; 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe, EPE 2023 ECCE Europe ; Conference date: 04-09-2023 Through 08-09-2023",

year = "2023",

month = oct,

day = "2",

doi = "10.23919/EPE23ECCEEurope58414.2023.10264386",

language = "English",

booktitle = "2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe",

publisher = "IEEE",

address = "United States",

}

Wang, L, Lei, Z, Liang, R, Rietveld, G & Hueting, RJE 2023, A new SiC power module assembly based on silver sintering bonding. in 2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe. IEEE, 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe, Aalborg, Denmark, 4/09/23. https://doi.org/10.23919/EPE23ECCEEurope58414.2023.10264386

TY - GEN

T1 - A new SiC power module assembly based on silver sintering bonding

AU - Wang, Lisheng

AU - Lei, Zhouqiao

AU - Liang, Ruizhi

AU - Rietveld, Gert

AU - Hueting, Raymond J.E.

N1 - Conference code: 25

PY - 2023/10/2

Y1 - 2023/10/2

N2 - Driven by the need for more reliable die and substrate attachment in wide band gap power electronics, a new bonding process scheme of silver (Ag) sintering of large interfaces has been developed for silicon-carbide power MOSFETs, where the devices are placed before pre-drying (or pre-heating) the sintering Ag paste. Using the new wet placement process, a maximum shear strength (76 MPa) and minimum void fraction (0.02 %) can be achieved provided that the pre-heating temperature is 80 °C and the power devices are well positioned by a specially developed vacuum-assisted fixture. Applied on an STPak sub-module power device, it still showed full functionality after sintering at 230 °C, 15 MPa and 10 mins.

AB - Driven by the need for more reliable die and substrate attachment in wide band gap power electronics, a new bonding process scheme of silver (Ag) sintering of large interfaces has been developed for silicon-carbide power MOSFETs, where the devices are placed before pre-drying (or pre-heating) the sintering Ag paste. Using the new wet placement process, a maximum shear strength (76 MPa) and minimum void fraction (0.02 %) can be achieved provided that the pre-heating temperature is 80 °C and the power devices are well positioned by a specially developed vacuum-assisted fixture. Applied on an STPak sub-module power device, it still showed full functionality after sintering at 230 °C, 15 MPa and 10 mins.

KW - 2024 OA procedure

KW - Power module

KW - SiC MOSFET

KW - Silver sintering

KW - Wet placement

KW - Packaging

UR - http://www.scopus.com/inward/record.url?scp=85175164796&partnerID=8YFLogxK

U2 - 10.23919/EPE23ECCEEurope58414.2023.10264386

DO - 10.23919/EPE23ECCEEurope58414.2023.10264386

M3 - Conference contribution

AN - SCOPUS:85175164796

BT - 2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe

PB - IEEE

T2 - 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe

Y2 - 4 September 2023 through 8 September 2023

ER -

A new SiC power module assembly based on silver sintering bonding

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