A new sub-micron 24 V SiGe:C Resurf HBT

J. Melai*, P. H.C. Magnée, R. J.E. Hueting, F. I. Neuilly, R. De Kort, J. W. Slotboom

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Abstract

For the first time a SiGe:C Heterojunction Bipolar Transistor (HBT) is presented that uses the Resurf effect to improve the cutoff frequency (f T) for a specified collector-base junction breakdown voltage (BV CB0). By using trenches filled with intrinsic silicon adjacent to the collector drift region the electric field profile can be reshaped so that a high breakdown voltage (> 20V) can be combined with a high drift doping concentration. This allows for high current densities and consequently a high fT. Experimental results show an increase of the f T×BVCB0 product of up to a factor of two by using Resurf, the maximum value obtained is 670 GHzV.

Original languageEnglish
Title of host publication2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs
PublisherIEEE
Pages33-36
Number of pages4
ISBN (Print)4-88686-060-5
DOIs
Publication statusPublished - 18 Oct 2004
Externally publishedYes
Event16th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2004 - Kitakyushu, Japan
Duration: 24 May 200427 May 2004
Conference number: 16

Conference

Conference16th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2004
Abbreviated titleISPSD 2004
CountryJapan
CityKitakyushu
Period24/05/0427/05/04

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