A new sub-micron 24 V SiGe:C Resurf HBT

J. Melai; P. H.C. Magnée; R. J.E. Hueting; F. I. Neuilly; R. De Kort; J. W. Slotboom

doi:10.1109/WCT.2004.240289

A new sub-micron 24 V SiGe:C Resurf HBT

J. Melai^*, P. H.C. Magnée, R. J.E. Hueting, F. I. Neuilly, R. De Kort, J. W. Slotboom

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

Abstract

For the first time a SiGe:C Heterojunction Bipolar Transistor (HBT) is presented that uses the Resurf effect to improve the cutoff frequency (f _T) for a specified collector-base junction breakdown voltage (BV _CB0). By using trenches filled with intrinsic silicon adjacent to the collector drift region the electric field profile can be reshaped so that a high breakdown voltage (> 20V) can be combined with a high drift doping concentration. This allows for high current densities and consequently a high f_T. Experimental results show an increase of the f _T×BV_CB0 product of up to a factor of two by using Resurf, the maximum value obtained is 670 GHzV.

Original language	English
Title of host publication	2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs
Publisher	IEEE
Pages	33-36
Number of pages	4
ISBN (Print)	4-88686-060-5
DOIs	https://doi.org/10.1109/WCT.2004.240289
Publication status	Published - 18 Oct 2004
Externally published	Yes
Event	16th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2004 - Kitakyushu, Japan Duration: 24 May 2004 → 27 May 2004 Conference number: 16

Conference

Conference	16th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2004
Abbreviated title	ISPSD 2004
Country/Territory	Japan
City	Kitakyushu
Period	24/05/04 → 27/05/04

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10.1109/WCT.2004.240289

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@inproceedings{f60fa93bb539454aa5ef447a4a023f4a,

title = "A new sub-micron 24 V SiGe:C Resurf HBT",

abstract = "For the first time a SiGe:C Heterojunction Bipolar Transistor (HBT) is presented that uses the Resurf effect to improve the cutoff frequency (f T) for a specified collector-base junction breakdown voltage (BV CB0). By using trenches filled with intrinsic silicon adjacent to the collector drift region the electric field profile can be reshaped so that a high breakdown voltage (> 20V) can be combined with a high drift doping concentration. This allows for high current densities and consequently a high fT. Experimental results show an increase of the f T×BVCB0 product of up to a factor of two by using Resurf, the maximum value obtained is 670 GHzV.",

author = "J. Melai and Magn{\'e}e, {P. H.C.} and Hueting, {R. J.E.} and Neuilly, {F. I.} and {De Kort}, R. and Slotboom, {J. W.}",

year = "2004",

month = oct,

day = "18",

doi = "10.1109/WCT.2004.240289",

language = "English",

isbn = "4-88686-060-5",

pages = "33--36",

booktitle = "2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs",

publisher = "IEEE",

note = "16th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2004, ISPSD 2004 ; Conference date: 24-05-2004 Through 27-05-2004",

}

Melai, J, Magnée, PHC, Hueting, RJE, Neuilly, FI, De Kort, R & Slotboom, JW 2004, A new sub-micron 24 V SiGe:C Resurf HBT. in 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs. IEEE, pp. 33-36, 16th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2004, Kitakyushu, Japan, 24/05/04. https://doi.org/10.1109/WCT.2004.240289

TY - GEN

T1 - A new sub-micron 24 V SiGe:C Resurf HBT

AU - Melai, J.

AU - Magnée, P. H.C.

AU - Hueting, R. J.E.

AU - Neuilly, F. I.

AU - De Kort, R.

AU - Slotboom, J. W.

N1 - Conference code: 16

PY - 2004/10/18

Y1 - 2004/10/18

N2 - For the first time a SiGe:C Heterojunction Bipolar Transistor (HBT) is presented that uses the Resurf effect to improve the cutoff frequency (f T) for a specified collector-base junction breakdown voltage (BV CB0). By using trenches filled with intrinsic silicon adjacent to the collector drift region the electric field profile can be reshaped so that a high breakdown voltage (> 20V) can be combined with a high drift doping concentration. This allows for high current densities and consequently a high fT. Experimental results show an increase of the f T×BVCB0 product of up to a factor of two by using Resurf, the maximum value obtained is 670 GHzV.

AB - For the first time a SiGe:C Heterojunction Bipolar Transistor (HBT) is presented that uses the Resurf effect to improve the cutoff frequency (f T) for a specified collector-base junction breakdown voltage (BV CB0). By using trenches filled with intrinsic silicon adjacent to the collector drift region the electric field profile can be reshaped so that a high breakdown voltage (> 20V) can be combined with a high drift doping concentration. This allows for high current densities and consequently a high fT. Experimental results show an increase of the f T×BVCB0 product of up to a factor of two by using Resurf, the maximum value obtained is 670 GHzV.

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U2 - 10.1109/WCT.2004.240289

DO - 10.1109/WCT.2004.240289

M3 - Conference contribution

AN - SCOPUS:4944244426

SN - 4-88686-060-5

SP - 33

EP - 36

BT - 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

PB - IEEE

T2 - 16th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2004

Y2 - 24 May 2004 through 27 May 2004

ER -

A new sub-micron 24 V SiGe:C Resurf HBT

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