A new technology for micromachining of silicon: Dopant selective HF anodic etching for the realization of low-doped monocrystalline silicon structures

C.J.M. Eijkel, J. Branebjerg, M. Elwenspoek, F.C.M. van de Pol

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    Abstract

    The sharp selectivity of HF anodic etching between p-Si and n-Si is used to realize monocrystalline silicon microstructures, in this case suspended beams, making use of masked implantation of phosphorous for the definition of the geometry. This technology offers opportunities in the field of micromachining of silicon for micromechanical applications. The technology is complementary to bulk micromachining (anisotropic KOH or EDP etching, or isotropic HF/HNO3 etching) and surface micromachining with sacrificial-layer techniques.
    Original languageEnglish
    Pages (from-to)588-589
    Number of pages2
    JournalIEEE electron device letters
    Volume11
    Issue number12
    DOIs
    Publication statusPublished - Dec 1990

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