A new technology for micromachining of silicon: Dopant selective HF anodic etching for the realization of low-doped monocrystalline silicon structures

C.J.M. Eijkel; J. Branebjerg; M. Elwenspoek; F.C.M. van de Pol

doi:10.1109/55.63048

A new technology for micromachining of silicon: Dopant selective HF anodic etching for the realization of low-doped monocrystalline silicon structures

C.J.M. Eijkel, J. Branebjerg, M. Elwenspoek, F.C.M. van de Pol

Research output: Contribution to journal › Article › Academic › peer-review

188 Downloads (Pure)

Abstract

The sharp selectivity of HF anodic etching between p-Si and n-Si is used to realize monocrystalline silicon microstructures, in this case suspended beams, making use of masked implantation of phosphorous for the definition of the geometry. This technology offers opportunities in the field of micromachining of silicon for micromechanical applications. The technology is complementary to bulk micromachining (anisotropic KOH or EDP etching, or isotropic HF/HNO3 etching) and surface micromachining with sacrificial-layer techniques.

Original language	English
Pages (from-to)	588-589
Number of pages	2
Journal	IEEE electron device letters
Volume	11
Issue number	12
DOIs	https://doi.org/10.1109/55.63048
Publication status	Published - Dec 1990

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/55.63048

Eijkel1990newFinal published version, 249 KB

Cite this

@article{955e7a3dda6243ad978f1b5c1d0c8acc,

title = "A new technology for micromachining of silicon: Dopant selective HF anodic etching for the realization of low-doped monocrystalline silicon structures",

abstract = "The sharp selectivity of HF anodic etching between p-Si and n-Si is used to realize monocrystalline silicon microstructures, in this case suspended beams, making use of masked implantation of phosphorous for the definition of the geometry. This technology offers opportunities in the field of micromachining of silicon for micromechanical applications. The technology is complementary to bulk micromachining (anisotropic KOH or EDP etching, or isotropic HF/HNO3 etching) and surface micromachining with sacrificial-layer techniques.",

author = "C.J.M. Eijkel and J. Branebjerg and M. Elwenspoek and {van de Pol}, F.C.M.",

year = "1990",

month = dec,

doi = "10.1109/55.63048",

language = "English",

volume = "11",

pages = "588--589",

journal = "IEEE electron device letters",

issn = "0741-3106",

publisher = "IEEE",

number = "12",

}

TY - JOUR

T1 - A new technology for micromachining of silicon

T2 - Dopant selective HF anodic etching for the realization of low-doped monocrystalline silicon structures

AU - Eijkel, C.J.M.

AU - Branebjerg, J.

AU - Elwenspoek, M.

AU - van de Pol, F.C.M.

PY - 1990/12

Y1 - 1990/12

N2 - The sharp selectivity of HF anodic etching between p-Si and n-Si is used to realize monocrystalline silicon microstructures, in this case suspended beams, making use of masked implantation of phosphorous for the definition of the geometry. This technology offers opportunities in the field of micromachining of silicon for micromechanical applications. The technology is complementary to bulk micromachining (anisotropic KOH or EDP etching, or isotropic HF/HNO3 etching) and surface micromachining with sacrificial-layer techniques.

AB - The sharp selectivity of HF anodic etching between p-Si and n-Si is used to realize monocrystalline silicon microstructures, in this case suspended beams, making use of masked implantation of phosphorous for the definition of the geometry. This technology offers opportunities in the field of micromachining of silicon for micromechanical applications. The technology is complementary to bulk micromachining (anisotropic KOH or EDP etching, or isotropic HF/HNO3 etching) and surface micromachining with sacrificial-layer techniques.

U2 - 10.1109/55.63048

DO - 10.1109/55.63048

M3 - Article

SN - 0741-3106

VL - 11

SP - 588

EP - 589

JO - IEEE electron device letters

JF - IEEE electron device letters

IS - 12

ER -

A new technology for micromachining of silicon: Dopant selective HF anodic etching for the realization of low-doped monocrystalline silicon structures

Abstract

UN SDGs

Access to Document

Fingerprint

Cite this