A new trench bipolar transistor for RF applications

Raymond J.E. Hueting, Jan W. Slotboom, Joost Melai, Prabhat Agarwal, Peter H.C. Magnée

Research output: Contribution to journalArticleAcademicpeer-review

8 Citations (Scopus)

Abstract

A new vertical trench SiGe heterojunction bipolar transistor (HBT) is proposed that improves the tradeoff between the cutoff frequency (fT) and the off-state collector-base breakdown voltage (BVcbo). Extensive device simulations show that a record fT · BVcbo product of about 2375 GHz · V can be obtained for an HBT having a trench field plate connected to the emitter and a linearly graded doping profile in the collector drift region, while about 700 GHz · V can be obtained for a standard optimized HBT. This large improvement is explained mainly by the suppression of the base-widening effect.

Original languageEnglish
Pages (from-to)1108-1113
Number of pages6
JournalIEEE transactions on electron devices
Volume51
Issue number7
DOIs
Publication statusPublished - 1 Jul 2004
Externally publishedYes

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Bipolar transistors
Heterojunction bipolar transistors
Cutoff frequency
Electric breakdown
Doping (additives)

Cite this

Hueting, Raymond J.E. ; Slotboom, Jan W. ; Melai, Joost ; Agarwal, Prabhat ; Magnée, Peter H.C. / A new trench bipolar transistor for RF applications. In: IEEE transactions on electron devices. 2004 ; Vol. 51, No. 7. pp. 1108-1113.
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Hueting, RJE, Slotboom, JW, Melai, J, Agarwal, P & Magnée, PHC 2004, 'A new trench bipolar transistor for RF applications' IEEE transactions on electron devices, vol. 51, no. 7, pp. 1108-1113. https://doi.org/10.1109/TED.2004.829867

A new trench bipolar transistor for RF applications. / Hueting, Raymond J.E.; Slotboom, Jan W.; Melai, Joost; Agarwal, Prabhat; Magnée, Peter H.C.

In: IEEE transactions on electron devices, Vol. 51, No. 7, 01.07.2004, p. 1108-1113.

Research output: Contribution to journalArticleAcademicpeer-review

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