A new trench bipolar transistor for RF applications

Raymond J.E. Hueting*, Jan W. Slotboom, Joost Melai, Prabhat Agarwal, Peter H.C. Magnée

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

8 Citations (Scopus)


A new vertical trench SiGe heterojunction bipolar transistor (HBT) is proposed that improves the tradeoff between the cutoff frequency (fT) and the off-state collector-base breakdown voltage (BVcbo). Extensive device simulations show that a record fT · BVcbo product of about 2375 GHz · V can be obtained for an HBT having a trench field plate connected to the emitter and a linearly graded doping profile in the collector drift region, while about 700 GHz · V can be obtained for a standard optimized HBT. This large improvement is explained mainly by the suppression of the base-widening effect.

Original languageEnglish
Pages (from-to)1108-1113
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number7
Publication statusPublished - 1 Jul 2004
Externally publishedYes


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