A nitride-based epitaxial surface layer formed by ammonia treatment of silicene-terminated ZrB2

Frank Bert Wiggers, B. Van Hao, R. Friedlein, Y. Yamada-Takamura, Jurriaan Schmitz, Alexeij Y. Kovalgin, Machiel Pieter de Jong

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    Abstract

    We present a method for the formation of an epitaxial surface layer involving B, N, and Si atoms on a ZrB2(0001) thin film on Si(111). It has the potential to be an insulating growth template for 2D semiconductors. The chemical reaction of NH3 molecules with the silicene-terminated ZrB2 surface was characterized by synchrotron-based, high-resolution core-level photoelectron spectroscopy and low-energy electron diffraction. In particular, the dissociative chemisorption of NH3 at 400 ◦C leads to surface nitridation, and subsequent annealing up to 830 ◦C results in a solid phase reaction with the ZrB2 subsurface layers. In this way, a new nitride-based epitaxial surface layer is formed with hexagonal symmetry and a single in-plane crystal orientation.
    Original languageUndefined
    Pages (from-to)1-5
    Number of pages5
    JournalJournal of chemical physics
    Volume144
    Issue number134703
    DOIs
    Publication statusPublished - 5 Apr 2016

    Keywords

    • EpitaxyPhotonsSemiconductor surfacesInsulator surfacesAtomic spectra
    • EWI-26978
    • Epitaxy
    • Semiconductor surfaces
    • IR-100311
    • Atomic spectra
    • Insulator surfaces
    • METIS-316910
    • Photons

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