A nitride-based epitaxial surface layer formed by ammonia treatment of silicene-terminated ZrB2

Frank Bert Wiggers, B. Van Hao, R. Friedlein, Y. Yamada-Takamura, Jurriaan Schmitz, Alexeij Y. Kovalgin, Machiel Pieter de Jong

    Research output: Contribution to journalArticleAcademicpeer-review

    1 Citation (Scopus)

    Abstract

    We present a method for the formation of an epitaxial surface layer involving B, N, and Si atoms on a ZrB2(0001) thin film on Si(111). It has the potential to be an insulating growth template for 2D semiconductors. The chemical reaction of NH3 molecules with the silicene-terminated ZrB2 surface was characterized by synchrotron-based, high-resolution core-level photoelectron spectroscopy and low-energy electron diffraction. In particular, the dissociative chemisorption of NH3 at 400 ◦C leads to surface nitridation, and subsequent annealing up to 830 ◦C results in a solid phase reaction with the ZrB2 subsurface layers. In this way, a new nitride-based epitaxial surface layer is formed with hexagonal symmetry and a single in-plane crystal orientation.
    Original languageUndefined
    Pages (from-to)1-5
    Number of pages5
    JournalJournal of chemical physics
    Volume144
    Issue number134703
    DOIs
    Publication statusPublished - 5 Apr 2016

    Keywords

    • EpitaxyPhotonsSemiconductor surfacesInsulator surfacesAtomic spectra
    • EWI-26978
    • Epitaxy
    • Semiconductor surfaces
    • IR-100311
    • Atomic spectra
    • Insulator surfaces
    • METIS-316910
    • Photons

    Cite this

    @article{4a73ffda6c5448a5aa43dcc9b4ab6a21,
    title = "A nitride-based epitaxial surface layer formed by ammonia treatment of silicene-terminated ZrB2",
    abstract = "We present a method for the formation of an epitaxial surface layer involving B, N, and Si atoms on a ZrB2(0001) thin film on Si(111). It has the potential to be an insulating growth template for 2D semiconductors. The chemical reaction of NH3 molecules with the silicene-terminated ZrB2 surface was characterized by synchrotron-based, high-resolution core-level photoelectron spectroscopy and low-energy electron diffraction. In particular, the dissociative chemisorption of NH3 at 400 ◦C leads to surface nitridation, and subsequent annealing up to 830 ◦C results in a solid phase reaction with the ZrB2 subsurface layers. In this way, a new nitride-based epitaxial surface layer is formed with hexagonal symmetry and a single in-plane crystal orientation.",
    keywords = "EpitaxyPhotonsSemiconductor surfacesInsulator surfacesAtomic spectra, EWI-26978, Epitaxy, Semiconductor surfaces, IR-100311, Atomic spectra, Insulator surfaces, METIS-316910, Photons",
    author = "Wiggers, {Frank Bert} and {Van Hao}, B. and R. Friedlein and Y. Yamada-Takamura and Jurriaan Schmitz and Kovalgin, {Alexeij Y.} and {de Jong}, {Machiel Pieter}",
    note = "eemcs-eprint-26978",
    year = "2016",
    month = "4",
    day = "5",
    doi = "10.1063/1.4944579",
    language = "Undefined",
    volume = "144",
    pages = "1--5",
    journal = "Journal of chemical physics",
    issn = "0021-9606",
    publisher = "American Institute of Physics",
    number = "134703",

    }

    A nitride-based epitaxial surface layer formed by ammonia treatment of silicene-terminated ZrB2. / Wiggers, Frank Bert; Van Hao, B.; Friedlein, R.; Yamada-Takamura, Y.; Schmitz, Jurriaan; Kovalgin, Alexeij Y.; de Jong, Machiel Pieter.

    In: Journal of chemical physics, Vol. 144, No. 134703, 05.04.2016, p. 1-5.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - A nitride-based epitaxial surface layer formed by ammonia treatment of silicene-terminated ZrB2

    AU - Wiggers, Frank Bert

    AU - Van Hao, B.

    AU - Friedlein, R.

    AU - Yamada-Takamura, Y.

    AU - Schmitz, Jurriaan

    AU - Kovalgin, Alexeij Y.

    AU - de Jong, Machiel Pieter

    N1 - eemcs-eprint-26978

    PY - 2016/4/5

    Y1 - 2016/4/5

    N2 - We present a method for the formation of an epitaxial surface layer involving B, N, and Si atoms on a ZrB2(0001) thin film on Si(111). It has the potential to be an insulating growth template for 2D semiconductors. The chemical reaction of NH3 molecules with the silicene-terminated ZrB2 surface was characterized by synchrotron-based, high-resolution core-level photoelectron spectroscopy and low-energy electron diffraction. In particular, the dissociative chemisorption of NH3 at 400 ◦C leads to surface nitridation, and subsequent annealing up to 830 ◦C results in a solid phase reaction with the ZrB2 subsurface layers. In this way, a new nitride-based epitaxial surface layer is formed with hexagonal symmetry and a single in-plane crystal orientation.

    AB - We present a method for the formation of an epitaxial surface layer involving B, N, and Si atoms on a ZrB2(0001) thin film on Si(111). It has the potential to be an insulating growth template for 2D semiconductors. The chemical reaction of NH3 molecules with the silicene-terminated ZrB2 surface was characterized by synchrotron-based, high-resolution core-level photoelectron spectroscopy and low-energy electron diffraction. In particular, the dissociative chemisorption of NH3 at 400 ◦C leads to surface nitridation, and subsequent annealing up to 830 ◦C results in a solid phase reaction with the ZrB2 subsurface layers. In this way, a new nitride-based epitaxial surface layer is formed with hexagonal symmetry and a single in-plane crystal orientation.

    KW - EpitaxyPhotonsSemiconductor surfacesInsulator surfacesAtomic spectra

    KW - EWI-26978

    KW - Epitaxy

    KW - Semiconductor surfaces

    KW - IR-100311

    KW - Atomic spectra

    KW - Insulator surfaces

    KW - METIS-316910

    KW - Photons

    U2 - 10.1063/1.4944579

    DO - 10.1063/1.4944579

    M3 - Article

    VL - 144

    SP - 1

    EP - 5

    JO - Journal of chemical physics

    JF - Journal of chemical physics

    SN - 0021-9606

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    ER -