A nitride-based epitaxial surface layer formed by ammonia treatment of silicene-terminated ZrB2

Frank Bert Wiggers, B. Van Hao, R. Friedlein, Y. Yamada-Takamura, Jurriaan Schmitz, Alexeij Y. Kovalgin, Machiel Pieter de Jong

Research output: Contribution to journalArticleAcademicpeer-review

1 Citation (Scopus)

Abstract

We present a method for the formation of an epitaxial surface layer involving B, N, and Si atoms on a ZrB2(0001) thin film on Si(111). It has the potential to be an insulating growth template for 2D semiconductors. The chemical reaction of NH3 molecules with the silicene-terminated ZrB2 surface was characterized by synchrotron-based, high-resolution core-level photoelectron spectroscopy and low-energy electron diffraction. In particular, the dissociative chemisorption of NH3 at 400 ◦C leads to surface nitridation, and subsequent annealing up to 830 ◦C results in a solid phase reaction with the ZrB2 subsurface layers. In this way, a new nitride-based epitaxial surface layer is formed with hexagonal symmetry and a single in-plane crystal orientation.
Original languageUndefined
Pages (from-to)1-5
Number of pages5
JournalJournal of chemical physics
Volume144
Issue number134703
DOIs
Publication statusPublished - 5 Apr 2016

Keywords

  • EpitaxyPhotonsSemiconductor surfacesInsulator surfacesAtomic spectra
  • EWI-26978
  • Epitaxy
  • Semiconductor surfaces
  • IR-100311
  • Atomic spectra
  • Insulator surfaces
  • METIS-316910
  • Photons

Cite this

@article{4a73ffda6c5448a5aa43dcc9b4ab6a21,
title = "A nitride-based epitaxial surface layer formed by ammonia treatment of silicene-terminated ZrB2",
abstract = "We present a method for the formation of an epitaxial surface layer involving B, N, and Si atoms on a ZrB2(0001) thin film on Si(111). It has the potential to be an insulating growth template for 2D semiconductors. The chemical reaction of NH3 molecules with the silicene-terminated ZrB2 surface was characterized by synchrotron-based, high-resolution core-level photoelectron spectroscopy and low-energy electron diffraction. In particular, the dissociative chemisorption of NH3 at 400 ◦C leads to surface nitridation, and subsequent annealing up to 830 ◦C results in a solid phase reaction with the ZrB2 subsurface layers. In this way, a new nitride-based epitaxial surface layer is formed with hexagonal symmetry and a single in-plane crystal orientation.",
keywords = "EpitaxyPhotonsSemiconductor surfacesInsulator surfacesAtomic spectra, EWI-26978, Epitaxy, Semiconductor surfaces, IR-100311, Atomic spectra, Insulator surfaces, METIS-316910, Photons",
author = "Wiggers, {Frank Bert} and {Van Hao}, B. and R. Friedlein and Y. Yamada-Takamura and Jurriaan Schmitz and Kovalgin, {Alexeij Y.} and {de Jong}, {Machiel Pieter}",
note = "eemcs-eprint-26978",
year = "2016",
month = "4",
day = "5",
doi = "10.1063/1.4944579",
language = "Undefined",
volume = "144",
pages = "1--5",
journal = "Journal of chemical physics",
issn = "0021-9606",
publisher = "American Institute of Physics",
number = "134703",

}

A nitride-based epitaxial surface layer formed by ammonia treatment of silicene-terminated ZrB2. / Wiggers, Frank Bert; Van Hao, B.; Friedlein, R.; Yamada-Takamura, Y.; Schmitz, Jurriaan; Kovalgin, Alexeij Y.; de Jong, Machiel Pieter.

In: Journal of chemical physics, Vol. 144, No. 134703, 05.04.2016, p. 1-5.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - A nitride-based epitaxial surface layer formed by ammonia treatment of silicene-terminated ZrB2

AU - Wiggers, Frank Bert

AU - Van Hao, B.

AU - Friedlein, R.

AU - Yamada-Takamura, Y.

AU - Schmitz, Jurriaan

AU - Kovalgin, Alexeij Y.

AU - de Jong, Machiel Pieter

N1 - eemcs-eprint-26978

PY - 2016/4/5

Y1 - 2016/4/5

N2 - We present a method for the formation of an epitaxial surface layer involving B, N, and Si atoms on a ZrB2(0001) thin film on Si(111). It has the potential to be an insulating growth template for 2D semiconductors. The chemical reaction of NH3 molecules with the silicene-terminated ZrB2 surface was characterized by synchrotron-based, high-resolution core-level photoelectron spectroscopy and low-energy electron diffraction. In particular, the dissociative chemisorption of NH3 at 400 ◦C leads to surface nitridation, and subsequent annealing up to 830 ◦C results in a solid phase reaction with the ZrB2 subsurface layers. In this way, a new nitride-based epitaxial surface layer is formed with hexagonal symmetry and a single in-plane crystal orientation.

AB - We present a method for the formation of an epitaxial surface layer involving B, N, and Si atoms on a ZrB2(0001) thin film on Si(111). It has the potential to be an insulating growth template for 2D semiconductors. The chemical reaction of NH3 molecules with the silicene-terminated ZrB2 surface was characterized by synchrotron-based, high-resolution core-level photoelectron spectroscopy and low-energy electron diffraction. In particular, the dissociative chemisorption of NH3 at 400 ◦C leads to surface nitridation, and subsequent annealing up to 830 ◦C results in a solid phase reaction with the ZrB2 subsurface layers. In this way, a new nitride-based epitaxial surface layer is formed with hexagonal symmetry and a single in-plane crystal orientation.

KW - EpitaxyPhotonsSemiconductor surfacesInsulator surfacesAtomic spectra

KW - EWI-26978

KW - Epitaxy

KW - Semiconductor surfaces

KW - IR-100311

KW - Atomic spectra

KW - Insulator surfaces

KW - METIS-316910

KW - Photons

U2 - 10.1063/1.4944579

DO - 10.1063/1.4944579

M3 - Article

VL - 144

SP - 1

EP - 5

JO - Journal of chemical physics

JF - Journal of chemical physics

SN - 0021-9606

IS - 134703

ER -